Breakdown voltage improvement of LDMOSs by charge balancing: An inserted P-layer in trench oxide (IPT-LDMOS)

For the first time, the novel inserted P-layer in trench oxide of LDMOS structure (IPT-LDMOS) is proposed in which a trench oxide with inserted P-layer is considered in the drift region to improve the breakdown voltage. Our simulation with two dimensional ALTAS simulator shows that by determining the optimum doping concentration of the P-layer, the charges of the N-drift and P-layer regions would be balanced. Therefore, complete depletion at the breakdown voltage in the drift region happens. Also, electric field in the IPT-LDMOS is modified by producing additional peaks which decrease the common peaks near the drain and source junctions.     

A new nanoscale and high temperature field effect transistor: Bi level FinFET

In this paper, we propose a new Bi Level Fin Field Effect Transistor (BL-FinFET) where the fin regions consist of Bi level. The novel features of the BL-FinFET are simulated and compared with a Conventional FinFET (C-FinFET). The three-dimensional and two-carrier device simulation demonstrate that the application of Bi level to the FinFET structure results in an ideal threshold voltage roll-off, reduced DIBL, excellent behavior in voltage gain at high temperatures and the gate capacitance improvement when compared with the C-FinFET. Also, this paper illustrates the benefits of the high performance BL-FinFET device over the conventional one and expands the application of Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistors (SOI MOSFETs) to high temperature.     

Volatile Organic Compound Based Probe for Induced Volatolomics of Cancers

The development of efficient protocols for cancer diagnosis remains highly challenging. An emerging approach relies on the detection in exhaled breath of volatile organic compounds (VOC) produced by tumours. In this context, described here is a novel strategy in which a VOC‐based probe is converted selectively in malignant tissues, by a tumour‐associated enzyme, for releasing the corresponding VOC. The latter is then detected in the exhaled breath as a tumour marker for cancer diagnosis. This approach allows the detection of several different tumours in mice, the monitoring of tumour growth and tumour response to chemotherapy. Thus, the concept of “induced volatolomics” provides a new way to explore biological processes using VOC‐based probes that could be adapted to many biomedical applications.     

Grafting of Acrylamide On 1, 1, 2, 2-Tetra-Chloroethane Preswelled Polyethylene Terephthalate) Films Using Azobisisobutyronitrile Initiator

Abstract

Graft polymerization of acrylamide (AAm) on 1, 1, 2, 2 tetrachloro-ethane (TCE) preswelled poly(ethylene terephthalate) (PET) films were performed with chemical initiation method using asobisiso-butyronitrile (AIBN) initiator. Temperature was found to have a greater effect on the swelling then the swelling time. Variation of the graft yield with polymerization temperature, time, AIBN concentration, AAm concentration, AIBN and AAm inclusion times were investigated. The optimum temperature for grafting was found to be 70°CC. The graft yield was observed to increase with polymerization time, AAm concentration, initiator and monomer diffusion time up to a saturation graft yield and then leveled off. An increase in AIBN concentration first enhanced the percent grafting then showed a decrease. The addition of some salts (Ni²⁺, Cr³⁺, Co²⁺, Cu²⁺) on the rate of grafting was also investigated. From the temperature dependence of the initial rate of grafting, the overall activation energy was found to be 4. 1 kcal/mol and relevant rate equation have been derived. The effect of grafting on film propities, such as water absorption capacity, intrinsic viscosity were determined. Grafted films were characterized by FTIR spectros-copy and scanning electron microscopy (SEM).     

New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region

High breakdown voltage and reduced on-resistance are desired characteristics in power MOSFETs. In order to obtain an excellent performance of Trench Gate Power MOSFET, we have proposed a new structure in which a SiGe zone is incorporated in the drift region to reduce on-resistance. Also, the buried oxide is considered in the drift region that surrounds the SiGe zone to increase breakdown voltage. The proposed structure is called a SiGe Zone Trench Gate MOSFET (SZ-TG). Our simulation with two dimensional simulator shows that by reducing an electric field and controlling the effects of parasitic BJT transistor in the SZ-TG structure, we can expand power applications of trench gate power structures.     

Effect of nano/micro‐mixed ceramic fillers on the dielectric and thermal properties of epoxy polymer composites

Nano/micro ceramic‐filled epoxy composite materials have been processed with various percentage additions of SiO₂, Al₂O₃ ceramic fillers as reinforcements selected from the nano and micro origin sources. Different types of filler combinations, viz. only nano, only micro, nano/micro, and micro/micro particles, were designed to investigate their influence on the thermal expansion, thermal conductivity, and dielectric properties of epoxy polymers. Thermal expansion studies were conducted using thermomechanical analysis that revealed a two‐step expansion pattern consecutively before and after vitreous transition temperatures. The presence of micro fillers have shown vitreous transition temperature in the range 70–80°C compared with that of nano structured composites in which the same was observed as ~90°C. Similarly, the bulk thermal conductivity is found to increase with increasing percentage of micron‐size Al₂O₃. It was established that the addition of micro fillers lead to epoxy composite materials that exhibited lower thermal expansion and higher thermal conductivity compared with nano fillers. Moreover, nano fillers have a significantly decisive role in having low bulk dielectric permittivity. In this study, epoxy composites with a thermal expansion coefficient of 2.5 × 10^?5/K, thermal conductivity of 1.18 W/m · K and dielectric permittivity in the range 4–5 at 1 kHz have been obtained. The study confirms that although the micro fillers seem to exhibit good thermal conductivity and low expansion coefficient, the nano‐size ceramic fillers are candidate as cofillers for low dielectric permittivity. However, a suitable proportion of nano/micro‐mixed fillers is necessary for achieving epoxy composites with promising thermal conductivity, controlled coefficient of thermal expansion and dielectric permittivity. Copyright © 2013 John Wiley & Sons, Ltd.