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A method for calculating the Landau levels of symmetric p-type inversion layers is presented. Using the envelope function approach in the Hartree approximation the magnetic field is incorporated into the Hamiltonian. In order to characterize the energy levels and to obtain a detailed understanding of the unusual Landau scheme, an analysis of the wave functions is made. Special effects are discussed for the inversion layers adjacent to the grain boundary of a Ge-bicrystal, with two occupied subbands. The simulation of Shubnikov-de Haas data by a density of states analysis shows that the different oscillatory periods are not directly related to the subband occupations.  相似文献   
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Surface quantum oscillations of the Shubnikov—de Haas type have been recorded in (1100) planes of p-type accumulation and n-type inversion layers of tellurium. Two electric subbands are found in accumulation, which can be explained rather well on the basis of an exponential potential well. In strong inversion layers three subbands are observed. It is not yet clear, whether they must be attributed to the H6 conduction band minimum of tellurium or whether another band minimum is involved.  相似文献   
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For the first time Shubnikov-de Haas oscillations have been observed in p-type inversion layers of (111) and (100) silicon field effect transistors. For both orientations a single electric subband was found. The effective mass of the surface carriers was determined from the temperature dependence of the oscillations, for (111) surfaces as a function of the surface electric field. At low gate voltages spin splitting of the Landau levels was resolved.  相似文献   
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A novel electron scattering apparatus for high resolution studies of angle-differential elastic and inelastic electron scattering from atoms and molecules in the gas phase is described and its performance characterized. It combines a laser photoelectron source, a triply differentially pumped collimated supersonic beam target (half angle 0.015 rad, background to beam density ratio < 0.01), and several electron multipliers for simultaneous detection of elastically scattered electrons and metastable atoms (or molecules) due to inelastic scattering. In detailed test measurements of the yield for the production of metastable He*(23S1) atoms around its threshold, the dependence of the overall energy width on various experimental parameters has been investigated. So far a resolution down to 7 meV (FWHM) has been obtained. Under such conditions we have investigated the profile of the He- (1 s 2 s 2 2 S 1/2 ) resonance at the scattering angles 22 ° , 45 ° , and 90 ° . From a consistent fit of the measured profiles by resonant scattering theory we determine a new value for the resonance energy ( E r = 19.365(1) eV) and an accurate resonance width ( Γ = 11.2(5) meV). These results are consistent with the previously recommended values. Received 23 July 2002 Published online 29 October 2002 RID="a" ID="a"e-mail: hotop@physik.uni-kl.de RID="b" ID="b"Permanent address: Department of Physics and Astronomy, Drake University, Des Moines, IA 50311, USA.  相似文献   
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