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光束发散度对紫外写入光纤光栅的影响   总被引:1,自引:0,他引:1  
李琳  赵岭  高侃  黄锐  方祖捷 《光学学报》2002,22(6):49-752
用傅里叶衍射光学分析了准分子激光束发散度对于光纤光栅制备的影响,发现光束发散角使光纤光栅的布拉格波长发生改变,相位版后干涉场沿光纤轴向和径向不均匀,对制备30dB高反射率光纤光栅造成困难。实验结果与理论分析基本一致,相对于理想平行光束情况,会聚光束使得光纤光栅布拉格波长出现在短波一边,发射光束使得光纤光栅布拉格波长出现在长波一边。  相似文献   
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Photochemical [2+2]cycloaddition between electron-donating aryl isocyanates and chloranil was observed in acetonitrile or benzene, and the following elimination of carbon dioxide resulted in the formation of the corresponding quinone imine dyes. This new route for synthesis of quinone imine was investigated by product analyses, laser flash photolyses, and molecular orbital calculation.  相似文献   
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Kan Hachiya 《Journal of Non》2003,321(3):217-224
First-principles calculations of the electronic structures of the wrong bonds were performed for amorphous germanium sulphides in order to explain their compositional dependence. Model cluster calculations of the density of states using a set of geometry similar to the crystalline-GeS2 coordination can reproduce the peak structure of the experimental valence band photoemission spectra. The bonding and anti-bonding states of the covalent Ge-S bonds form valence and conduction band respectively, and the top of the valence band is occupied with S 3p lone-pair states. The bonding states are modified by S-S bonds and the anti-bonding states are modified by Ge-Ge bonds, mainly through their hybridization with the wrong-bond states between p-orbitals. The lone-pair states do not interact either of them to form a different band, and obscure the modification induced by the S-S wrong bonds. Therefore, we can conclude that the narrowing of the bandgap with increasing Ge content from GeS2 composition is due to that of the conduction-band bottom with increasing germanium wrong bonds, though the narrowing with increasing S content is moderate due to the presence of the lone-pair states at the valence-band top.  相似文献   
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The photochemical deprotection of alkyl 2,4-dinitrobenzenesulfenate or alkyl 2-nitrobenzenesulfenate was successfully achieved by addition of triethylamine, while it was unsuccessful without triethylamine. The sulfur-oxygen bond cleavage is thought to occur heterolytically in the sulfenate anion radical produced by photoinduced electron transfer with triethylamine.  相似文献   
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Quantitative analysis of metal cation doping by solid oxide electrochemical doping (SOED) has been performed under galvanostatic doping conditions. A M–β″-Al2O3 (M=Ag, Na) microelectrode (contact radius: about 10 μm) was used as cation source to attain a homogeneous solid–solid contact between the β″-Al2O3 and doping target. In Ag doping into alkali borate glass, the measured dopant amount closely matched the theoretical value. High Faraday efficiencies of above 90% were obtained. This suggests that the dopant amount can be precisely controlled on a micromole scale by the electric charge during electrolysis. On the other hand, current efficiencies of Na doping into Bi2Sr2CaCu2Oy (BSCCO) ceramics depended on the applied constant current. Efficiencies of above 80% were achieved at a constant current of 10 μA (1.6 A cm−2). The relatively low efficiencies were explained by the saturation of BSCCO grain boundaries with Na. By contrast, excess Na was detected on the anodic surface of ceramics at a constant current of 100 μA (16 A cm−2). In the present study, we demonstrate that SOED enables micromole-scale control over dopant amount.  相似文献   
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In this contribution, we demonstrate a new effective methodology for constructing highly efficient and durable poly(p‐phenyleneethynylene) (PPE) containing emissive material with nonaggregating and hole‐facilitating properties through the introduction of hole‐transporting blocks into the PPE system as the grafting coils as well as building the energy donor–acceptor architecture between the grafting coils and the PPE backbone. Poly(2‐(carbazol‐9‐yl)ethyl methacrylate) (PCzEMA), herein, is chosen as the hole‐transporting blocks, and incorporated into the PPE system as the grafting coils via atom transfer radical polymerization. The chemical structure of the resultant copolymer, PPE‐g‐PCzEMA, was characterized by NMR and gel permeation chromatography, showing that the desirable copolymer was obtained with the narrow polydispersity. The increased thermal stability of PPE‐g‐PCzEMA was confirmed by thermogravimetric analysis and differential scanning calorimetry along with its macroinitiator. The optoelectronic properties of this copolymer were studied in detail by ultraviolet‐visible absorption, photoluminescence emission and excitation spectra, and cyclic voltammogram (CV). The results indicate that PPE‐g‐PCzEMA exhibits the solid‐state luminescent property dominated by individual lumophores, and also the energy transfer process from the PCzEMA blocks to the PPE backbone with a relatively higher energy transfer efficiency in the solid‐state compared to that of the solution state. Additionally, the hole‐injection property is greatly facilitated due to the presence of PCzEMA, as confirmed by CV profiles. All these data indicate that PPE‐g‐PCzEMA is a good candidate for use in optoelectronic devices. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 3776–3787, 2007  相似文献   
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