一代树状碳硅烷液晶的光化学研究－－端基含12个4－丁氧基氮苯介晶基元

研究了新的含12个丁氧基偶氮苯介晶基元的五代树状碳硅烷液晶D1及偶氮苯介 晶基元化合物M5在氯仿、四氢呋喃、N，N－二甲基甲酰胺、乙醇和苯等溶剂中的量 子产率、反－顺光异构化、光回复异构、反／顺异构组分比、热回复异构及活化能 。D1和M5的光致变色速率常数为10~(-1)s~(-1)，而含同一偶氮基元的光致变色液 晶聚硅氧烷的光致变色速率常数为10~(-8)s~(-1)，因此，液晶树状物D1的光响应 速度比后者快10~7倍。     

高师“中学化学微格教学”课程评价教学改革

基于多元评价理论,在“中学化学微格教学”课程中先后尝试进行了如下改革：增加“自评”“组评”环节,调整“自评”“组评”和“师评”的权重,编制并逐年完善了“微格教学评分表（1.0/2.0/3.0）”,基本建立了评价目标多元、评价标准多元、评价主体多元、评价方式多元的多元评价体系。     

Low Dimension Semiconducting Composite Nanomaterials

Recently, low dimension nanostructures have gained considerable attention due to their technological potential as unique types of nanoscale building blocks for future optoelectronic devices and systems. Semiconducting composite nanomaterials, which can combine the advantages of two or more components, have been the focus in the area of nanomaterials synthesis and device application.In this paper, we report our work on the preparation of composite nanomaterials based on CNTs.CNTs were coated by organic or inorganic species via novel and facile methods (Fig. 1 and Fig.2).These functional CNTs based composites show eminent prospects and opportunities for new applications in a wide variation of areas.     

一代树状碳硅烷液晶研究－端基含12个丁氧基偶氮苯介晶基元

用发散法合成周边含12个丁氧基偶氮苯介晶基元（M5）端基新的一代树状碳硅 烷（D1）。并用元素分析、核磁共振、激光解吸电离飞行时间质谱、红外、紫外、 偏光显微镜、差示扫描量热（DSC）和广角X射线衍射（WAXD）表征。D1为向列相与 M5相同，树状物相态由介晶基元相态决定，D1相行为：K82N133I132N67K，D1熔点 比M5降低30－43℃，D1清亮点比M5增加9－11℃，D1介晶相区比M5加宽39－54℃， 观察到8条黑刷的树状物的高强向错（S＝＋2），D1清亮焓值略低于通常液晶n-i相 变清亮焓值，原因是枝化的树状物核心不易完全变形为液晶态的各向异性结构。     

一种光交联电光聚合物的合成及其外部电光测量

合成了一种新的带有光交联基团的电光聚合物,其高分子基体是双酚A环氧树脂,二阶非线性生色团对硝基苯胺和光交联基团肉桂酰氯都键接在高分子链上.将聚合物溶解后旋涂成膜,对薄膜进行电晕极化.极化的后阶段用紫外光照射,使聚合物体系交联成网络结构,形成生色团取向长时间稳定的聚合物电光薄膜.用这种聚合物电光薄膜构成外部电光调制系统,测量了共面波导上的电信号.     

Guajamers A-I,Rearranged Polycyclic Phloroglucinol Meroterpenoids from Psidium guajava Leaves and Their Antibacterial Activity

Main observation and conclusion Eight new polycyclic phloroglucinol meroterpenoids guajamers A-H (1-8),a methylated benzoylphloroglucinol meroterpenoid guajamer...     

Crystal Structure and Biological Activities of （R）-N′-[2-（4-Methoxy-6-chloro）-pyrimidinyl]- N-[3-methyl-2-（4-chlorophenyl）butyryl]-urea

1 INTRODUCTION The acyl ureas are a kind of high biological acti- vity compounds with low toxicity to mammals, birds, fish, amphibians, etc., and significant organic synthe- sis intermediates working extensively as insecticides, pesticides, fungicides and herbicides in agrochemi- cal industry[1～7]. While pyrimidinyl derivatives show excellent biological activities in the development of pesticide, and are used to develop high effective and high select herbicides. For example, pyrimidiny su…     

Magnetic Properties of Melted ThMn12-Type Carbides and Their Nitrides

The carbides of NdDy0.2Fe12-yMoyC0.6 （y = 1.5, 2） crystallized in the ThMn12-type structure have been successfully synthesized by arc melting method, followed by a heat treatment. The magnetic properties are strongly enhanced with the addition of carbon. Upon the carbonation the saturation magnetization Ms is increased by about 20emu/g and the Curie temperature Tc is enhanced by 40-70K. The spin reorientation （SR） temperature decreases from 125 K for NdDy0.2Fe10Mo2 to 55 K for NdDy0.2Fe10MO2C0.6 indicating the change of magnetocrystalline anisotropy in the Nd sublattice. It is found that the intrinsic magnetic properties of the carbides can be improved by further nitrogenation, The composite carbon-nitrogen compounds show a Tc - 560K, M8 - 105 emu/g and Ha （anisotropy field） - 86kOe for NdDy0.2Fe10Mo2Co.6Nz and a Tc- 628K, M8 - 119 emu/g and Ha - 115kOe for NdDy0.2Fe10.5Mo1.5C0.6Nz. These magnetic properties are even better than those of simple nitrides, suggesting that these compounds can be considered as a good candidate for permanent magnet applications.     

熔盐法包覆BaTiO_3及其电性能

通过熔盐法将MgTiO3薄膜均匀地包覆在钛酸钡颗粒表面形成芯壳结构。包覆机理是在MgCl2的熔盐状态800℃下Mg2 取代BaTiO3中的Ba2 离子表面生成MgTiO3薄膜薄膜厚度约20nm。采用TEM、XRD验证了MgTiO3的包覆。包覆粉末经烧成瓷后具有良好的高频性能在1MHz～800MHz的频率范围内介电常数恒定为130。     

Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

The kink effect in current–voltage(IV)characteristic s seriously deteriorates the performance of a GaN-based HEMT.Based on a series of direct current(DC)IV measurements in a GaN-based HEMT with an AlGaN back barrier,a possible mechanism with electron-trapping and detrapping processes is proposed.Kink-related deep levels are activated by a high drain source voltage(Vds)and located in a GaN channel layer.Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization.Moreover,the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.