Fabrication and characterization of a PbTe quantum dots multilayer structure

Multilayer PbTe quantum dots (QDs) and SiO₂ were grown by pulsed laser deposition (PLD) and Plasma enhanced chemical vapor deposition (PECVD) techniques. The crystalline structure, QD size and size dispersion were observed by high-resolution transmission electron microscopy (HRTEM) measurements. This technique allows one to grow PbTe QDs as small as 1.8 nm diameter and 0.6 nm size dispersion. The whole structure can be used in a Fabry–Perot cavity for an optical device operating at the mid-infrared region.     

The Translation Invariant Massive Nelson Model: I. The Bottom of the Spectrum

In this paper we analyze the bottom of the energy-momentum spectrum of the translation invariant Nelson model, describing one electron linearly coupled to a second quantized massive scalar field. Our results are valid for all values of the coupling constant and include an HVZ theorem, non-degeneracy of ground states, existence of isolated groundstates in dimensions 1 and 2, non-existence of ground states embedded in the bottom of the essential spectrum in dimensions 3 and 4, (i.e., at total momenta where no isolated groundstate eigenvalue exists), and we study regularity and monotonicity properties of the bottom of the essential spectrum, as a function of total momentum. Communicated by Joel Feldman submitted 04/11/04, accepted 17/02/05     

Photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity

We report new results on the diffraction properties of photoinduced gratings in InGaAs/InGaAsP MQW structures. The original feature of this device is that the QWs are enclosed in an asymmetric Fabry–Perot microcavity in order to increase the diffraction efficiency. We observe oscillations in the diffraction efficiency due to resonant effects in the microcavity. The experimental spectra are compared with theory. Diffraction efficiency at 1.55 μm attains a maximum value of 2.7% at a write beam fluence of 260 μ J cm⁻², and then decreases at higher fluences. We explain this phenomenon by an absorption saturation at high excitation.     

Mode beating in spot-size converter lasers

An anomalous modulation in the wavelength spectrum has been observed in lasers with spot-size converters. This intensity modulation is shown to be caused by beating between the fundamental lasing mode and radiation modes in the taper. This results in a periodic modulation in the net gain spectrum, which causes wavelength jumps between adjacent net gain maxima, and a drive current dependent spectral width that is expected to affect system performance. The amplitude of this spectral modulation is reduced significantly by either using an angled rear-facet which reflects the beating radiation modes away from the laser axis, or by using a nonlinear, adiabatic taper.     

On Rado's Boundedness Conjecture

We prove that Rado's Boundedness Conjecture from Richard Rado's 1933 famous dissertation Studien zur Kombinatorik is true if it is true for homogeneous equations. We then prove the first nontrivial case of Rado's Boundedness Conjecture: if a₁,a₂, and a₃ are integers, and if for every 24-coloring of the positive integers (or even the nonzero rational numbers) there is a monochromatic solution to the equation a₁x₁+a₂x₂+a₃x₃=0, then for every finite coloring of the positive integers there is a monochromatic solution to a₁x₁+a₂x₂+a₃x₃=0.     

Amphoteric trap modeling of multidielectric scaled SONOS nonvolatile memory structures

We have characterized multidielectric scaled SONOS nonvolatile memory structures with the quasi-static linear voltage ramp (LVR) technique and dynamic pulse measurements. We have formulated physically-based ERASE/WRITE and retention methods with deep level amphoteric traps which capture and emit carriers to the bands in the silicon nitride film. Amphoteric trap parameters are extracted by the LVR technique. ERASE/WRITE and retention amphoteric trap model simulations agree well with the experimental dynamic pulse measurements. Experimental scaled SONOS structures have been fabricated with tunnel oxide X_OT=20 Å, nitride X_N=30 Å and blocking oxide X_OB=55 Å and demonstrated a static flatband shift of 3.6 V with ±5 V programming voltages. These structures may be used as the nonvolatile memory element in high density VLSI circuits.