The Chemistry of Simple Phosphorus-Carbon Compounds

With the aid of selected examples an overview is given of the development trends in phosphoruscarbon chemistry over the past few years. An attempt is made to demonstrate the relationships between various parameters and properties such as constitution, basicity, substitution by functional groups, reaction behavior etc. of the compounds. In the case of basis compounds containing methylphosphorus groups the state of development of industrially interesting processes is also outlined. In addition, the synthesis of a few bifunctional phosphorus-carbon compounds which can be employed as comonomers in the production of polymers is described.     

In-situ doping of and trench-refill with LPCVD-poly-silicon (I). (PH3/SiH4) ratio as a process-controlling parameter

The ratio of phosphine- to silane concentration in the reaction gas mixture is a processcontrolling parameter in LPCVD-polysilicon deposition not only with respect to doping level of the layer and layer growth rate on planar wafer surface, but also with respect to the degree of growth rate depression occurring by change-over from wafer surface to sidewall area within trenches in the region of the upper rim of a trench. Trench refill behaviour deteriorates in consequence of growth rate depression within trench the more the higher the doping level of poly-silicon will be chosen. Yet below a lower limit of doping poly-silicon growth rate equals that of undoped poly-silicon, and, as for trench-refill, there is no difference in layer growth within trench and beyond.     

On chemical kinetics of silicon deposition from silane (IV). In-situ phosphorus doping of LPCVD poly silicon in the temperature range 900–950 K

Highly in-situ phosphorus-doped LPCVD poly silicon deposition from mixtures consisting of silane and phosphine has been investigated for limited conditions regarding temperature, silane input, phosphine-silane ratio and total pressure. Agreeing with the deposition of undoped poly silicon, growth rate linearly decays along the axis of the wafer cage applied for in-situ doped poly silicon. In consequence layer growth should be controlled by a chemical reaction of 0.5^th order. In contrast to undoped poly silicon the slope of axial growth rate decay increases with the distance between wafers increased. This behaviour is a proof for a homogneous chemical reaction mechanism. The silicon forming reaction is characterized by an activation energy of about 25 kcal/mole for PH₃/SiH₄ = 0.003.     

ORSIS – News and further developments

The paper deals with the simulation program Off Road Systems Interactive Simulation (ORSIS) which is the w,orldwide leading simulation tool for off road driving of wheeled vehicles. Even though the present state of development allows a very realistic simulation of the man–vehicle–terrain system, there is continuous further improvement in the computer program’s detail. Some of the recent innovations integrated into the program are presented in this paper. These examples were chosen in a way that the scope of the further developments can be demonstrated. They represent three main directions of the work carried out: the refining of the tire–soil-model, the integration of new technologies and subsystems into the vehicle model and the improvement of the man–machine–interface especially in driving simulators.The first part of the paper describes a further development of the tire–soil-model. A significant improvement has been achieved to include the influence of slippery surfaces on traction in combination with the tire tread pattern. Results from finite element method (FEM) as well as real measurements were used to build up an approach, which qualitatively allows the influence of the positive–negative portion of the tire tread and the lug height of the tire tread on traction to be considered. The basic idea is very simple and straightforward. Moreover the calculation costs are very low, so the enhancement does not affect real time operation.In the second part a physical model for the central tire inflation system (CTIS) is presented. With this model it is possible to simulate the complete pneumatic system of a CTIS, including the air compressor with an accumulator, the pressure line and the wheel valves. The components are modelled by their physical parameters, so an adaptation to different existing tire-pressure-control-systems (TPC) can be made. The paper presents a short review of the modelling and a first validation using real measurements. Furthermore the influence of each parameter, e.g. the discharge flow of the compressor on the inflation time, is presented.The third part of the paper describes a further development of the visualization system. The ORSIS OpenGL graphic engine was separated from the main ORSIS simulation and can be run on different PCs controlled via a network. It is therefore possible to build up very cheap multi-channel visualization systems using consumer PCs running under LinuX. The fact that ORSIS itself is running on a normal PC allows the assembly of comparatively cheap driving simulators of a high end simulation quality.