The Chemistry of Simple Phosphorus-Carbon Compounds

With the aid of selected examples an overview is given of the development trends in phosphoruscarbon chemistry over the past few years. An attempt is made to demonstrate the relationships between various parameters and properties such as constitution, basicity, substitution by functional groups, reaction behavior etc. of the compounds. In the case of basis compounds containing methylphosphorus groups the state of development of industrially interesting processes is also outlined. In addition, the synthesis of a few bifunctional phosphorus-carbon compounds which can be employed as comonomers in the production of polymers is described.     

On chemical kinetics of silicon deposition from silane (IV). In-situ phosphorus doping of LPCVD poly silicon in the temperature range 900–950 K

Highly in-situ phosphorus-doped LPCVD poly silicon deposition from mixtures consisting of silane and phosphine has been investigated for limited conditions regarding temperature, silane input, phosphine-silane ratio and total pressure. Agreeing with the deposition of undoped poly silicon, growth rate linearly decays along the axis of the wafer cage applied for in-situ doped poly silicon. In consequence layer growth should be controlled by a chemical reaction of 0.5^th order. In contrast to undoped poly silicon the slope of axial growth rate decay increases with the distance between wafers increased. This behaviour is a proof for a homogneous chemical reaction mechanism. The silicon forming reaction is characterized by an activation energy of about 25 kcal/mole for PH₃/SiH₄ = 0.003.     

In-situ doping of and trench-refill with LPCVD-poly-silicon (I). (PH3/SiH4) ratio as a process-controlling parameter

The ratio of phosphine- to silane concentration in the reaction gas mixture is a processcontrolling parameter in LPCVD-polysilicon deposition not only with respect to doping level of the layer and layer growth rate on planar wafer surface, but also with respect to the degree of growth rate depression occurring by change-over from wafer surface to sidewall area within trenches in the region of the upper rim of a trench. Trench refill behaviour deteriorates in consequence of growth rate depression within trench the more the higher the doping level of poly-silicon will be chosen. Yet below a lower limit of doping poly-silicon growth rate equals that of undoped poly-silicon, and, as for trench-refill, there is no difference in layer growth within trench and beyond.     

Synthesis of tungsten carbide nanopowder via submerged discharge method

Tungsten carbide nanopowder was prepared via pulsed discharge of bulk tungsten and graphite rods immersed in pure ethanol. The effect of discharge parameters on the characteristics of final products was investigated. Structural and morphological characterization of nanopowder was performed by means of X-ray diffraction analysis and transmission electron microscopy. In order to determine the feasibility of using synthesized material as an electrocatalyst, tungsten carbide nanopowder was tested for hydrogen evolution. A correlation was found between morphology of nanoparticles, their phase composition and electrocatalytic activity.