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YANGHong-jun ZHAOBai-jun FANGXiu-jun DUGuo-tong LIUDa-li GAOChun-xiao LIUXi-zhe 《高等学校化学研究》2005,21(2):137-140
Piezoelectric ZnO layers with high resistivity for surface acoustic wave applications were prepared on polycrystalline diamond/Si substrates with(Ill) orientation via metal-organic chemical vapour deposition.The characteristics of the films were optimized through different growth methods. The comparative study of the X-ray diffraction spectra and scanning electron microscopic images showed that the final-prepared ZnO films were dominantly c-axis oriented. Zn and O elements in the final prepared ZnO films were investigated through X-ray photoelectron spectroscopy. According to the statistical results, the n(Zn)/n(O) ratio is near 1. The Raman scattering was also performed in back scattering configuration. E2 mode was observed for the final films, which indicated that the better quality ZnO films had been obtained. The resistivity of the films was also enhanced via the modification of the growth methods. 相似文献
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采用金属有机化学气相沉积(MOCVD)方法在Si衬底上进行了ZnO的成核与薄膜生长研究。ZnO薄膜的形貌和结晶特性由成核和后期生长过程共同决定,初期成核温度决定了其尺寸和密度,进而影响后期ZnO主层的生长行为,但由于高温对后期ZnO纳米柱横向生长的抑制,纳米柱的尺寸并没有因为成核尺寸的增大而变大,因此在560℃得到了晶柱尺寸最大、密度最小的ZnO薄膜。最后通过改变成核温度,优化了ZnO外延膜的结晶质量。 相似文献
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采用脉冲激光沉积(PLD)法在单晶Si(100)衬底上生长ZnO薄膜,以X射线衍射(XRD)、原子力显微镜(AFM)和透射电镜(TEM)等手段分析了所得ZnO薄膜的晶体结构和微观形貌。优化工艺(700℃,20Pa)下生长的ZnO薄膜呈c轴高度择优取向,柱状晶垂直衬底表面生长,结构致密均匀。室温光致发光(PL)谱分析结果表明,随着薄膜生长时O2分压的增大,近带边紫外发光峰与深能级发光峰之比显著增强,表明薄膜的结晶性能和化学计量比都有了很大的改善。O2分压为20Pa时所生长的ZnO薄膜具有较理想的化学计量比和较高的光学质量。 相似文献
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