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This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quantum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices. 相似文献
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超高效液相色谱-飞行时间质谱快速分析人参根中的皂甙化合物 总被引:1,自引:0,他引:1
建立了超高效液相色谱-飞行时间质谱快速分析人参根部提取物中的皂甙类化合物的方法。色谱柱为HSS T3超高效液相色谱柱(100 mm×2.1 mm, 1.8 μm);以15 mmol/L甲酸铵水溶液-乙腈为流动相,采用二元梯度洗脱的方式对人参主根的皂甙提取物进行分离。基于待测目标物的多级质谱碎片离子、精确质量等信息,结合9种人参皂甙标准化合物的多级质谱碎片离子质谱图,共鉴定出人参主根提取物中27种皂甙类化合物。在确定的条件下,以9种人参皂甙标样为研究对象,进行了全面的方法学考察,发现它们的线性范围分别为0.33~9.00 mg/L (Rg1), 0.11~9.00 mg/L (Re), 0.02~2.00 mg/L (Rf), 0.07~6.00 mg/L (Rg2), 0.04~3.00 mg/L (Rb1, Rb3), 0.22~6.00 mg/L (Rc), 0.04~9.00 mg/L (Rb2, Rd);在中等加标浓度时,经内标物峰面积校正的9种皂甙标准化合物的峰面积的相对标准偏差(RSD)不高于11.3%;低、中、高3个质量浓度加标水平的回收率范围分别为90%~100%、98%~104%及96%~103%;最低检出限为3.5~18.5 μg/L。该方法具有高分辨、快捷、简便、可靠等特点,并成功地应用于分析同一产地、不同生长时间的人参干燥主根中皂甙的差异。可以预计此方法可进一步应用于各种人参原料和制品中皂甙的快速测定。 相似文献
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The optical performance of a grating-coupled external Continuous tuning from 1391 nm to 1468 nm is realized at cavity laser based on InAs/InP quantum dots is investigated. an injection current of 1900 mA. With the injection current increasing to 2300 mA, the tuning is blue shifted to some extent to the range from 1383 nm to 1461 nm. By combining the effect of the injection current with the grating tuning, the total tuning bandwidth of the external cavity quantum-dot laser can reach up to 85 nm. The dependence of the threshold current on the tuning wavelength is also presented. 相似文献
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A mode-locked external-cavity laser emitting at 1.17-μm wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity length, repetition rates of 854, 912, and 969 MHz are achieved respectively. The narrowest -3-dB radio-frequency linewidth obtained is 38 kHz, indicating that the laser is under stable mode-locking operation. 相似文献
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According to the InAs/GaAs submonolayer quantum dot active region, we demonstrate a bent-waveguide superluminescent diode emitting at a wavelength of around 970 nm. At a pulsed injection current of 0.5 A, the device exhibits an output power of 24 mW and an emission spectrum centred at 971 nm with a full width at half maximum of 16 nm. 相似文献
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