DNA股间交联及与细胞癌变关系的研究进展

癌症是目前全球共同面临的重大公共卫生问题。流行病学研究显示,大约80%～90%的人类癌症是由环境因素诱导产生的,其中又以化学因素占主导地位。化学致癌机理的双区理论认为,环境致癌物经体内代谢生成特定的双官能团烷化剂,从而诱导DNA双链互补碱基对之间的交联并最终引发癌症。目前针对DNA股间交联的检测方法已有不少研究,然而DNA股间交联如何引起细胞癌变的机理仍悬而未决,这也成为人们关注的焦点。本文旨在通过综述近年来对DNA股间交联的研究,从其结构、体内形成过程和检测方法等方面,探讨DNA股间交联与细胞癌变的关系,为环境致癌机理的研究提供思路。     

Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress

The repetitive unclamped inductive switching (UIS) avalanche stress is conducted to investigate the degradation and breakdown behaviors of conventional shield gate trench MOSFET (C-SGT) and P-ring SGT MOSFETs (P-SGT). It is found that the static and dynamic parameters of both devices show different degrees of degradation. Combining experimental and simulation results, the hot holes trapped into the Si/SiO₂ interface and the increase of crystal lattice temperature should be responsible for the degradation and breakdown behaviors. Moreover, under repetitive UIS avalanche stress, the reliability of P-SGT overcomes that of C-SGT, benefitting from the decreasing of the impact ionization rate at bottom of field oxide caused by the existence of P-ring.     

Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress

The progressive current degradation and breakdown behaviors of GaN-based light emitting diodes under high reversebias stress are studied by combining the electrical, optical, and surface morphology characterizations. The current features a typical "soft breakdown" behavior, which is linearly correlated to an increase of the accumulative number of electroluminescence spots. The time-to-failure for each failure site approximately obeys a Weibull distribution with slopes of about 0.67 and 4.09 at the infant and wear-out periods, respectively. After breakdown, visible craters can be observed at the device surface as a result of transient electrostatic discharge. By performing focused ion beam cuts coupled with scan electron microscope, we observed a local current shunt path in the surface layer, caused by the rapid microstructure deterioration due to significant current heating effect, consistent well with the optical beam induced resistance change observations.