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利用N-苯甲酰β-苯胺乙酸酯在酒石酸溶液中的水解作用,可以自均匀溶液析出結晶状的N-苯甲酰β-苯胲-鈮絡合物。在65—70°加热二小时可定量沉淀,此时溶液的pH值自8.0降至5.0,放置过夜后沉淀的粗成为NbO(C_(13)H_(10)O_2N)_3。 N-苯甲酰β-苯胲乙酸酯可由BPHA的吡啶溶液与乙酸酐制得。 相似文献
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采用两步烧结法处理原位合成的碳包覆的LiFePO4/C复合正极材料,采用XRD、SEM对材料的结构及表面形貌进行了表征;通过CV、EIS及充放电测试仪进行电化学性能测试.结果表明,两步烧结法制备的材料具有良好的倍率性能及循环性能.0.2C时的首次放电比容量为142.5 mAh/g,循环30次后,放电比容量仍达到126.9 mAh/g;0.5 C时的首次放电比容量为122.9 mAh/g;1 C时的首次放电比容量为106.4 mAh/g;2 C时的首次充放电为81.3 mAh/g. 相似文献
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Jian-Min Wu 《中国物理 B》2022,31(5):57803-057803
Monolayer transition metal dichalcogenides favor the formation of a variety of excitonic quasiparticles, and can serve as an ideal material for exploring room-temperature many-body effects in two-dimensional systems. Here, using mechanically exfoliated monolayer WS2 and photoluminescence (PL) spectroscopy, exciton emission peaks are confirmed through temperature-dependent and electric-field-tuned PL spectroscopy. The dependence of exciton concentration on the excitation power density at room temperature is quantitatively analyzed. Exciton concentrations covering four orders of magnitude are divided into three stages. Within the low carrier concentration stage, the system is dominated by excitons, with a small fraction of trions and localized excitons. At the high carrier concentration stage, the localized exciton emission from defects coincides with the emission peak position of trions, resulting in broad spectral characteristics at room temperature. 相似文献
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In this paper,small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method.Benefitting from the high crystallinity and large specific surface area of InP nanowires,the simply constructed photodetector demonstrates a high responsivity of up to 1170 A·W ~(-1) and an external quantum efficiency of2.8 × 10~5% with a fast rise time of 110 ms and a fall time of 130 ms,even at low bias of 0.1 V.The effect of back-gate voltage on photoresponse of the device was systematically investigated,confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation.A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the photodetectors.These convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics. 相似文献
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