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用燃烧法制备了不同Tb3+掺杂量的Y2O2S:Tb3+纳米发光材料,同时用高温固相法制备了不同Tb3+掺杂量的Y2O2S:Tb3+体相材料,X射线晶体衍射结果表明,制备的纳米材料和体相材料均为单一的Y2O2S相.由Debye-Scherre公式估算得到纳米颗粒的平均粒径大约为10 nm.讨论了纳米材料和体相材料Y2O2S:Tb3+中Tb3+的掺杂浓度对荧光性能的影响.激发光谱表明纳米材料的基质吸收带与体相材料相比向高能端移动了6nm,应用久保理论对此进行了定性的解释. 相似文献
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Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation
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Aluminum-oxide films deposited as gate dielectrics on germanium (Ge) by atomic layer deposition were post oxidized in an ozone atmosphere. No additional interfacial layer was electron microscopy and X-ray photoelectron spectroscopy detected by the high-resolution cross-sectional transmission measurements made after the ozone post oxidation (OPO) treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment. 相似文献
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