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Electroluminescent devices with PVK film doped with Eu(DBM)3(phen) and PBD were fabricated. The device structure of glass substrate/indium-tin-oxide/PPV/PVK:Eu(DBM)3-(phen):PBD/Alq3/Al was employed. The emissive layer was formed by spin-casting method. A sharply red electroluminescence with a maximum luminance of 114.4 cd/m2 was achieved at 42 V. 相似文献
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Polymericlightemittingdiodes(LEDs)havedrawnconsiderableattentionfortheirpossibleapplicationsinlargeareaflatpaneldisplaysincethe1990swhenagroupatCambridgeUniversity[1]reportedthatpoly(pphenylenevinylene)(PPV)exhibitselectroluminescence.Significantimprovement… 相似文献
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