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本试验结果表明:1.2′-5′三腺苷酸(2′-5′P_3A_3)有激活多种来源(包括人)巨噬细胞的吞噬作用,说明2′-5′P_3A_3对巨噬细胞的激活作用具有普遍意义。2.甲胎蛋白(AFP)能抑制巨噬细胞的吞噬功能,可能对肝癌的发生有一定的作用。本工作证实2′-5′P_3A_3能抵消AFP对巨噬细胞的抑制作用。3.关于2′-5′P_3A_3生物功能的研究,过去都要用CaCl_2等方法将它引入细胞,这对临床应用是不实际的。本文不使用CaC国_2等方法,2′-5′P_3A_3即能激活巨噬细胞。 相似文献
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_(ppp)A_(2'p),'A_(2'p,)'A(2'-5'P_3A_3) activates macrophages and increases the phagocytosis of macrophages from different species including human beings. This indicates that the activation of macrophages may be a general action of 2'-5'P_3A_3. This discovery broadens the effect of 2'-5'P_3A_3 beyond the antiviral field.α-Feto-protein (AFP) inhibits the phagocytosis of macrophages and may be involved in the development of hepatoma. Data presented here show that 2'-5'P_3A_3 can antagonize this suppressive effect of AFP.Methods used so far for introducing 2'-5'P_3A_3 into the cells were made with the aid of CaCl_2, etc. under conditions which may not be the same as those used clinically. It was found that 2'-5'P_3A_3 can develop its biological effect without the aid of CaCl_2, etc. 相似文献
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This paper concentrates on the impact of SiN passivation layer deposited by plasma-enhanced chemical vapor deposition(PECVD) on the Schottky characteristics in GaN high electron mobility transistors(HEMTs). Three types of SiN layers with different deposition conditions were deposited on GaN HEMTs. Atomic force microscope(AFM), capacitance-voltage(C-V), and Fourier transform infrared(FTIR) measurement were used to analyze the surface morphology, the electrical characterization, and the chemical bonding of SiN thin films, respectively. The better surface morphology was achieved from the device with lower gate leakage current. The fixed positive charge Q_f was extracted from C-V curves of Al/SiN/Si structures and quite different density of trap states(in the order of magnitude of 1011-1012 cm~(-2)) was observed.It was found that the least trap states were in accordance with the lowest gate leakage current. Furthermore, the chemical bonds and the %H in Si-H and N-H were figured from FTIR measurement, demonstrating an increase in the density of Q_f with the increasing %H in N-H. It reveals that the effect of SiN passivation can be improved in GaN-based HEMTs by modulating %H in Si-H and N-H, thus achieving a better Schottky characteristics. 相似文献
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杂原子掺杂是提高碳点荧光性能的有效手段.本研究以柠檬酸(C6 H8 O7)、硼酸(H3 BO3)、3-氨丙基三乙氧基硅烷(APTES)为原料,采用微波法一步制备硅和硼掺杂的碳点(SiBCDs);在SiBCDs前驱体中加入聚丙烯酸钠(PAAS),微波法制备了水溶性好、量子产率高的PAAS-SiBCDs.采用X射线衍射(XRD)、X射线光电子能谱(XPS)及红外光谱(FT-IR)对制备的碳点进行了表征.SiBCDs粒径约4~8 nm,PAAS-SiBCDs平均粒径5.2 nm,两者最大激发波长和发射波长分别为350和445 nm,荧光量子产率(QY)分别为20.1%和34.6%.基于血红蛋白对PAAS-SiBCDs的荧光猝灭效应,建立了全血样品中血红蛋白(Hb)的检测方法,线性范围为0.21~5.22μmol/L,检出限为0.06μmol/L(S/N=3). 相似文献
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