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研究了高能球磨对Si粉微观结构和水解制氢性能的影响。球磨过程中,颗粒尺寸不断减小,非晶转变发生,晶界、内应力、位错以及晶格变形等微观缺陷不断增加,有利于提高Si粉的制氢性能;但随着球磨时间的延长,颗粒团聚趋于严重,粉末氧化不断加剧,降低了Si粉的制氢性能。当球磨时间为1 h,Si粉具有最优的制氢性能,70℃水解时其放氢量为1 484.2 mL·gSi-1,但由于水解副产物SiO2包覆在Si表面导致其转化率为94%,无法继续完全水解。 相似文献
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Numerical study of a highly sensitive surface plasmon resonance sensor based on circular-lattice holey fiber 下载免费PDF全文
Jian-Fei Liao 《中国物理 B》2022,31(6):60701-060701
A new design of surface plasmon resonance (SPR) sensor employing circular-lattice holey fiber to achieve high-sensitivity detection is proposed. The sensing performance of the proposed sensor is numerically investigated and the results indicate that our proposed SPR sensor can be applied to the near-mid infrared detection. Moreover, the maximum wavelength sensitivity of our proposed sensor can reach as high as 1.76×104 nm/refractive index unit (RIU) and the maximum wavelength interrogation resolution can be up to 5.68×10-6 RIU when the refractive index (RI) of analyte lies in (1.31, 1.36). Thanks to its excellent sensing performance, our proposed SPR sensor will have great potential applications for biological analytes detection, food safety control, bio-molecules detection and so on. 相似文献
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Optimizing Design of Breakdown Voltage to Eliminate Back Gate Bias Effect in Silicon-on-Insulator Diode Using Low Doping Buried Layer 下载免费PDF全文
This work presents the optimal design of a silicon-on-insulator (SOI) diode structure to eliminate the back gate bias effect and to improve breakdown voltage. The SOI structure is characterized by inserting a silicon low doping buried layer (LDBL) between the silicon layer and the buried oxide layer. The LDBL thickness is a key parameter that affects the strong inversion condition of the back MOS capacitor of the new SOI diode. The optimal LDBL thickness in the SOI diode is 2.65μm.The LDBL shielding layer improved the breakdown voltage. 相似文献
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研究了高能球磨对Si粉微观结构和水解制氢性能的影响。球磨过程中,颗粒尺寸不断减小,非晶转变发生,晶界、内应力、位错以及晶格变形等微观缺陷不断增加,有利于提高Si粉的制氢性能;但随着球磨时间的延长,颗粒团聚趋于严重,粉末氧化不断加剧,降低了Si粉的制氢性能。当球磨时间为1 h,Si粉具有最优的制氢性能,70℃水解时其放氢量为1 484.2 m L·g~(-1)Si,但由于水解副产物SiO_2包覆在Si表面导致其转化率为94%,无法继续完全水解。 相似文献
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