Differential nonlinear photocarrier radiometry for characterizing ultra-low energy boron implantation in silicon

The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabrication of silicon complementary metal-oxide-semiconductor (CMOS) devices. In the present work, SRIM program and photocarrier radiometry (PCR) are employed to monitor the boron implantation in industrial-grade silicon in an ultra-low implantation energy range from 0.5 keV to 5 keV. The differential PCR technique, which is improved by greatly shortening the measurement time through the simplification of reference sample, is used to investigate the effects of implantation energy on the frequency behavior of the PCR signal for ultra-shallow junction. The transport parameters and thickness of shallow junction, extracted via multi-parameter fitting the dependence of differential PCR signal on modulation frequency to the corresponding theoretical model, well explain the energy dependence of PCR signal and further quantitatively characterize the recovery degree of structure damage induced by ion implantation and the electrical activation degree of impurities. The monitoring of nm-level thickness and electronic properties exhibits high sensitivity and apparent monotonicity over the industrially relevant implantation energy range. The depth profiles of implantation boron in silicon with the typical electrical damage threshold (Y_ED) of 5.3×10¹⁵ cm^-3 are evaluated by the SRIM program, and the determined thickness values are consistent well with those extracted by the differential PCR. It is demonstrated that the SRIM and the PCR are both effective tools to characterize ultra-low energy ion implantation in silicon.     

Thermal diffusivity of light-emitting diode packaging material determined by photoacoustic piezoelectric technique

Thermal property is one of the most important properties of light-emitting diode (LED).Thermal property of LED packaging material determines the heat dissipations of the phosphor and the chip surface,accordingly having an influence on the light-emitting efficiency and the life-span of the device.In this paper,photoacoustic piezoelectric (PAPE) technique has been employed to investigate the thermal properties of polyvinyl alcohol (PVA) and silicon dioxide,which are the new and the traditional packaging materials in white LED,respectively.Firstly,the theory of PAPE technique has been developed for two-layer model in order to investigate soft materials;secondly,the experimental system has been set up and adjusted by measuring the reference sample;thirdly,the thermal diffusivities of PVA and silicon dioxide are measured and analysed.The experimental results show that PVA has a higher thermal diffusivity than silicon dioxide and is a better packaging material in the sense of thermal diffusivity for white LED.     

层状磷酸铝化合物Na4[Al4P4O18]·H2O的合成及质子电导性能研究

在无有机模板剂的条件下, 以Na⁺离子为结构导向剂, 通过水热合成法制备了一种与利用1,3-丙二胺合成的Uio-14具有相同层结构的二维磷酸铝化合物Na₄[Al₄P₄O₁₈]·H₂O(1), 通过单晶X射线衍射确定了其拓扑结构. 利用粉末X射线衍射、 扫描电子显微镜、 电感耦合等离子体( ICP)元素分析和热重分析等对其物理化学性质进行了表征. 结果表明, 化合物1属于单斜晶系, 空间群为P2₁/c, 晶胞参数a=1.00887(9) nm, b=0.86747(8) nm, c=0.97580(9) nm, V=0.77387(12) nm³, Z=2, 其阴离子层由铝氧三角双锥(AlO₅)和磷氧四面体(PO₄)构成, 层间通过Na⁺离子平衡电荷; 与Uio-14相比, 化合物1具有更高的热稳定性, 在400 ℃空气条件下煅烧后结构仍然保持完好. 对化合物1的质子电导性能测试结果表明, 相比于传统的分子筛类材料, 化合物1展现出优异的质子电导性能, 在55 ℃下质子电导率可达到1.19×10^-3 S/cm.     

分子筛限域单原子金属催化剂的研究进展

分子筛由于具有规则的微孔孔道结构、 较大的表面积、 优异的(水)热稳定性, 被认为是限域合成超小尺寸金属物种的理想载体. 近年来, 分子筛限域单原子金属催化剂由于超高的金属分散度、 接近100%的金属利用率以及独特的电子结构, 被广泛地应用于重要的催化反应和气体吸附分离过程. 本文系统地总结了近年来分子筛限域不同类型单原子金属催化剂的合成策略, 以及其在多相催化和气体分离等领域的研究进展. 最后, 提出了分子筛限域单原子金属催化剂在合成与表征方面存在的挑战和未来的发展方向.     

EAB分子筛的合成及在甲醇制烯烃反应中的应用

甲醇制烯烃(MTO)反应提供了一条非石油路线制备低碳烯烃的新途径,发展新颖的催化材料是实现MTO反应性能提升的关键.本文探究了具有八元环孔道结构的EAB分子筛的合成条件和热稳定性;利用X射线衍射分析、扫描电子显微镜、电感耦合等离子发射光谱及氨气程序升温脱附实验等表征了所制备分子筛的拓扑结构、晶体形貌、骨架组成和酸性位点;并发现向EAB分子筛孔道中引入K+和Cs+离子可以在550℃煅烧条件下使分子筛晶体结构保持稳定.通过向合成体系中加入晶种可以有效抑制杂晶的生成并提升晶化速率,EAB分子筛完全晶化的时间可缩短至3 d.此外,将制备的EAB分子筛催化剂应用于MTO催化反应,乙烯、丙烯和丁烯的总选择性最高可达87.2%,丙烯和乙烯的选择性比最高可达2.4.研究结果为开发新型MTO催化剂并实现低碳烯烃的比例调控提供借鉴.