利用具有核壳结构的SiO2@PPy粒子制备SiC空心球

碳化硅(SiC)材料具有耐高温、 耐酸碱腐蚀和高机械强度等优异性能, 因此, 许多研究者都致力于制备优良的SiC材料以取代传统材料用作苛刻条件下催化剂的载体材料[1～4]. 研究结果表明, 具有高比表面积和空心核结构的载体材料可以负载更多的异质催化剂, 从而提高催化剂的催化性能. 因此, 制备同时具有高比表面积和空心核结构的SiC材料具有重要的应用价值. 传统的碳热还原反应、 自蔓延高温合成、 聚合物热分解等方法都不适合制备具有独特结构形貌的SiC材料[5～8]. 近年来, Ledoux等[1～4, 9]采用形状记忆合成(Shape memory synthesis)方法将不同形貌的固相碳材料与气相SiO蒸气反应, 成功地制备了不同形状的SiC材料, 比表面积在20～100 m2/g之间. Vix-Guterl等[10- 11]采用反应复制技术(Reactive replica technique)从C/SiO2材料制备了微米级的管状SiC材料. 另外, Tang等[12]采用水热合成法得到了纳米级的SiC空心球, 但产率不高. 本文利用具有核壳结构的SiO2@PPy粒子在1 300 ℃进行碳热还原反应, 成功制备同时具有较高比表面积和空心核结构的SiC空心球材料.     

High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier

A new approach to fabricating high-quality AlInGaN film as a lattice-matched barrier layer in multiple quantum wells(MQWs) is presented. The high-quality AlInGaN film is realized by growing the AlGaN/InGaN short period superlattices through metalorganic chemical vapor deposition, and then being used as a barrier in the MQWs. The crystalline quality of the MQWs with the lattice-matched AlInGaN barrier and that of the conventional InGaN/GaN MQWs are characterized by x-ray diffraction and scanning electron microscopy. The photoluminescence(PL) properties of the InGaN/AlInGa N MQWs are investigated by varying the excitation power density and temperature through comparing with those of the InGaN/GaN MQWs. The integral PL intensity of InGaN/AlInGaN MQWs is over 3 times higher than that of InGaN/GaN MQWs at room temperature under the highest excitation power. Temperature-dependent PL further demonstrates that the internal quantum efficiency of InGaN/AlInGaN MQWs(76.1%) is much higher than that of InGaN/GaN MQWs(21%).The improved luminescence performance of InGaN/AlInGaN MQWs can be attributed to the distinct reduction of the barrier-well lattice mismatch and the strain-induced non-radiative recombination centers.