催化剂对热蒸发法生长SnO2纳米晶体质量的影响及其发光光谱研究

用热蒸发法制备了SnO2纳米结构,并用光致发光方法研究了其光谱特性.发现有催化剂条件下制备的SnO2纳米带的发光主峰为3.68 eV,正对应SnO2纳米晶体的带隙能量;而无催化条件下制备的SnO2纳米晶体的发光则以氧空位、悬键和表面态发光为主.并且前者的发光效率比后者提高近两个数量级,这些实验结果说明在有催化条件下制备了高质量的SnO2纳米带.另外,对其发光光谱进行了Gauss拟合,从拟合结果发现了(101)和(101)T孪生晶面的表面态的发光峰.     

一种检测NO的修饰电极

报道了[Fe(Sal₂en)]²⁺的咪唑加合物对NO电氧化的影响.实验表明,它将[Fe(Sal₂en)]²⁺对NO的电催化氧化活性提高T₂倍.过量咪唑会降低[Fe(Sal₂en)]²⁺对NO的催化活性.证实了NO的电催化氧化形成NO[Fe(Sal₂en)]²⁺中间体的推断.用制得的修饰电极测定NO,当c(NO)在3×10^-6～2×10^-9mol/L时,有良好线性关系,相对标准偏差小于0.5％,线性相关系数为0.9994,检测限为2×10^-9mol/L.满足生理分析的要求.     

催化剂对热蒸发法生长SnO2纳米晶体质量的影响及其发光光谱研究

用热蒸发法制备了SnO₂纳米结构，并用光致发光方法研究了其光谱特性.发现有催化剂条件下制备的SnO₂纳米带的发光主峰为3.68 eV, 正对应SnO₂纳米晶体的带隙能量; 而无催化条件下制备的SnO₂纳米晶体的发光则以氧空位、悬键和表面态发光为主.并且前者的发光效率比后者提高近两个数量级，这些实验结果说明在有催化条件下制备了高质量的SnO₂纳米带.另外,对其发光光谱进行了Gauss拟合, 从拟合结果发现了(101)和(101)_T孪生晶面的表面态的发光峰. 关键词： 光致发光光谱 半导体纳米晶体 催化剂 2')" href="#">SnO₂     

Modification of the spontaneous emission of quantum dots near the surface of a three-dimensional colloidal photonic crystal

This paper demonstrates experimentally and numerically that a significant modification of spontaneous emission rate can be achieved near the surface of a three-dimensional photonic crystal.In experiments,semiconductor core-shell quantum dots are intentionally confined in a thin polymer film on which a three-dimensional colloidal photonic crystal is fabricated.The spontaneous emission rate of quantum dots is characterised by conventional and time-resolved photoluminescence (PL) measurements.The modification of the spontaneous emission rate,which is reflected in the change of spectral shape and PL lifetime,is clearly observed.While an obvious increase in the PL lifetime is found at most wavelengths in the band gap,a significant reduction in the PL lifetime by one order of magnitude is observed at the short-wavelength band edge.Numerical simulation reveals a periodic modulation of spontaneous emission rate with decreasing modulation strength when an emitter is moved away from the surface of the photonic crystal.It is supported by the fact that the modification of spontaneous emission rate is not pronounced for quantum dots distributed in a thick polymer film where both enhancement and suppression are present simultaneously.This finding provides a simple and effective way for improving the performance of light emitting devices.     

量子点激子超辐射的条件和量子点集合的相干辐射

半导体量子点的激子超辐射出现的条件是本文激子超辐射的理论研究中的重点,我们的理论推导结果揭示要观测到半导体量子点的激子超辐射必须采用短于百飞秒的激发源。我们用ZnO单量子点观察到激子超辐射,同时测量和分析讨论了量子点集合的相干辐射性质,发现单量子点超辐射的二次方泵浦与辐射强度关系被大量量子点间的线性递增所掩盖。