甚高频等离子体增强化学气相沉积法沉积μc-Si∶H薄膜中氧污染的初步研究

对不同的本底真空条件下,采用甚高频等离子体增强化学气相沉积技术沉积的氢化微晶硅（μc_Si∶H）薄膜中的氧污染问题进行了比较研究.对不同氧污染条件下制备的薄膜样品的x射线光电子能谱与傅里叶变换红外吸收光谱测量结果表明：μc_Si∶H薄膜中,氧以Si—O，O—O和O—H三种不同的键合模式存在,不同的键合模式源自不同的物理机理.μc_Si∶H薄膜的Raman光谱、电导率与激活能的测量结果进一步显示：沉积过程中氧污染程度的不同,对μc_Si∶H薄膜的结构特性与电学特性产生显著影响；而不同氧污染对μc_Si∶H薄膜电学特性的影响不同于氢化非晶硅（a_Si:H）薄膜. 关键词： 氢化微晶硅薄膜 甚高频等离子体增强化学气相沉积 氧污染     

Family-based association study of ZNF533, DOCK4 and IMMP2L gene polymorphisms linked to autism in a northeastern Chinese Han population

Objective： A study in a Caucasian population has identified two single-nucleotide polymorphisms （SNPs） in ZNF533, one in DOCK4, and two in IMMP2L, which were all significantly associated with autism. They are located in AUTS1 and AUTS5, which have been identified as autism susceptibility loci in several genome-wide screens. The present study aimed to investigate whether ZNF533, DOCK4, and IMMP2L genes are also associated with autism in a northeastern Chinese Han population. Methods： We performed a similar association study using families with three individuals （one autistic child and two unaffected parents）. A family-based transmission disequilibrium test （TDT） was used to analyze the results. Results： There were significant associations between autism and the two SNPs of ZNF533 gene （rs11885327： X^2=4.5200, P=0.0335; rs1964081 ：）（2=4.2610, P=0.0390） and the SNP of DOCK4 gene （rs2217262 X^2=5.3430, P=0.0208）. Conclusions： Our data suggest that ZNF533 and DOCK4 genes are linked to a predisposition to autism in the northeastern Chinese Han population.     

Sb掺杂SrTio3透明导电薄膜的光电子能谱研究

用X射线光电子能谱和同步辐射光电子能谱研究了Sb掺杂的钙钛矿型氧化物SrTi1-xSbxO3(x=0.05,0.10,0.15,0.20)薄膜的电子结构.薄膜由紫外脉冲激光淀积在SrTiO3(001)单晶衬底上.该薄膜系列在可见光波段透明,透过率均超过90%.其导电性与掺杂浓度有关,当Sb掺杂浓度x=0.05时,薄膜显示金属型导电性.X射线光电子能谱和同步辐射光电子能谱研究结果表明,Sb掺杂在母化合物SrTiO3的禁带内引入了浅杂质能级和深杂质能级.浅杂质能级上的退局域化电子离化到导带中会产生一定的传导电 关键词： 光电子能谱 光学透过率 脉冲激光沉积薄膜     

在C70固体/p-GaAs结构中的甚深深能级

发展了恒温电容瞬态数据处理方法，称新方法为恒温电容瞬态时间积谱(ICTTS).用ICT TS方法测量分析了C₇₀固体/p GaAs异质结的深能级，结果发现在C₇₀固体中存在两个很深的空穴陷阱，H C₁和H₂，它们的能级位置分别为Ev⁺⁰856eV和 Ev+1037eV. 关键词： 70')" href="#">C₇₀ 深能级 恒温电容瞬态     

Spin and pseudospin symmetries of the Dirac equation with shifted Hulthén potential using supersymmetric quantum mechanics

In this paper, we obtain approximate analytical solutions of the Dirac equation for the shifted Hulthén potential within the framework of spin and pseudospin symmetry limits for arbitrary spin–orbit quantum number κ using the supersymmetry quantum mechanics. The energy eigenvalues and the corresponding Dirac wave functions are obtained in closed forms.