Characterization of ZnO:AI films deposited by r.f.magnetron-sputtering at low temperature

Transparent conducting ZnO:AI thin films with good adhesion and Iow resistivity have been prepared on organic substrates and Coming 7059 glass substrates by r.f. magnetron-sputtering technique at Iow substrate temperature (25-210℃). Structural and photoelectric properties of the deposited films are investigated. The deposited films are polycrystalline with hexagonal structure and a preferred orientation with the c-axis perpendicular to the substrate. Only the (002) peak is observed.High quality films with resistivity as Iow as 1.0 x 10- 3Ω@ cm and 8.4 x 10- 4Ω@ cm, the average transmittance over 74% and 85% in the wavelength range of the visible spectrum have been obtained on different substrates.     

杂多酸催化合成乙酸乙酯

回流吸附法制备的负载型12-钨磷酸(HPW/C)是合成乙酸乙酯的高效催化剂。最佳反应条件下乙醇转化率达96％,酯化选择性100％。催化剂的高活性是由于HPW在活性炭上高度分散,使活性位增多,有效酸量增大。HPW/C还具有热稳定性高和不易流失等优点。     

软件补偿方法在测温智能仪表中的应用

软件补偿方法具有效果好、精确度高、成本低的优点。介绍了在研制多点巡回检测仪中采用的几种软件补偿方法：前向通道特性补偿使放大器等元件不因外界条件的变化而受到任何影响；引线电阻的补偿可实现引线电阻对系统无任何影响；热电阻、热电偶的非线性度补偿效果明显，节省开销。     

中子辐照对Pd80Si20与Pd77.5Cu6Si16.5非晶态合金结构的影响

本工作用X射线衍射技术示差扫描量热法(DSC)和内耗测量等手段研究金属-类金属非晶态合金Pd₈₀Si₂₀和Pd_77.5Cu₆Si_16.5中子辐照前后的微观结构变化。结果表明,辐照在两种样品的对关联函数g(r)以及径向分布函数RDF(r)上都引起明显的变化;辐照后样品的晶化温度和晶化热有所提高,结构变得更加无序,Pd₈₀Si₂₀非晶态合金的内耗在T关键词：     

广义［d，k］－自控序列的周期特性

广义［ｄ，ｋ］－自控序列的周期特性冯克勤（中国科学技术大学数学系，合肥２３００２６）李超（国防科学技术大学数学系，长沙４１０００３）ＰＥＲＩＯＤＩＣＰＲＯＰＥＲＴＩＥＳＯＦＴＨＥＧＥＮＥＲＡＬＩＺＥＤ［ｄ，ｋ］－ＳＥＬＦＣＯＮＴＲＯＬＬＥＤＳＥＱＵＥ...     

Gauss Sum of Index Four

Let p be a prime number, q = pf and m| q - 1. For a multiplicative character χ of Fq with order m, the Gauss sum G(χ) over Fq is defined by G(χ)=∑(X()Fq)χ(x)ζTP(x),ζp=e2πi/p,(1)where T is the mapping for Fq/Fp.     

Gauss Sum of Index Four

Let p be a prime number, q=p^f and m|q-1. For a multiplicative character x of Fq with order m, the Gauss sum G(x) over Fq is defined by     

退火温度对低温生长MgxZn1－xO薄膜光学性质的影响

用射频磁控溅射法在80℃衬底温度下制备出Mg_xZn_1-xO(x=0.16)薄膜，用X射线衍射(XRD)、光致发光(PL)和透射谱研究了退火温度对Mg_xZn_1-xO薄膜结构和光学性质的影响.测量结果显示，Mg_xZn_1-xO薄膜为单相六角纤锌矿结构，并且具有沿c轴的择优取向；随着退火温度的升高，(002)XRD峰强度、平均晶粒尺寸和紫外PL峰强度增大，(002)XRD峰半高宽(F 关键词： xZn_1-xO薄膜')" href="#">Mg_xZn_1-xO薄膜 射频磁控溅射 退火