制造模式变迁的动力机制及其特征分析

制造模式变迁过程受制于三类因素，即制造模式现有状态、制造模式的四大基本维度（技术与方法、文化、组织结构以及和谐管理)和外部环境中的随机涨落因素。该过程表现出非平衡相变、对称性破缺、分叉等特征。当新的制造模式形成时，其研发投入、文化、组织结构及其管理、知识调配都须有很大的变动和调整。     

补偿法在物理解题中的应用

补偿法就是设法使一些不对称分布问题变为对称分布,以便直接应用一些定理或公式方便地求出问题的答案.1 补偿法在力学中的应用 计算刚体的转动惯量. 例1:如图1所示,从一个半径为R的均匀薄板上挖去一个半径为r的     

基于自组织理论的制造系统演化机制研究

制造系统(ManufacturingSystems)演化的动力主要来自系统自身的内营力、外营力、以及技术创新与扩散作用。自组织是制造系统演化的动力机制。控制参量的变化和系统要素的质、量变化均可引起制造系统演化过程的自组织。制造系统最终将稳定在熵值较低的耗散结构状态。     

虚拟企业组建的合作动力与利益协调分析

虚拟企业是指由两个以上企业在市场机遇的驱动下而结成的一种动态联盟.本文首先从企业资源的流动性与企业间相互依赖程度的相关性的角度,对企业组建虚拟企业联盟的合作动力进行了初步分析.运用博弈分析的方法,对虚拟企业的利益协调机制进行分析和论述.     

SPDC双光子态函数及其几率解释研究

分析了单色泵浦光子流和量子真空噪声对非线性晶体的综合作用,从泵浦光与非线性晶体的相互作用过程解释了自发参量下转换光场(SPDC光场)的产生根源,推导了SPDC双光子态的数学表达式,并给出其几率解释。     

基于熵的制造系统灵捷性评价模型及其应用研究

制造系统能否具有灵捷性与其信息传递有序度有直接相关性,信息结构有序度的高低直接反映出制造系统应对变化的快速响应能力。本文运用结构熵评价理论,从信息有序度的角度对制造系统结构的灵捷性进行评价,并对两种制造系统组织结构有序度做出评价,分析了组织层次、跨度、分权对制造系统结构灵捷性的影响。     

Anisotropic photoresponse of layered rhenium disulfide synaptic transistors

Layered ReS₂ with direct bandgap and strong in-plane anisotropy shows great potential to develop high-performance angle-resolved photodetectors and optoelectronic devices. However, systematic characterizations of the angle-dependent photoresponse of ReS₂ are still very limited. Here, we studied the anisotropic photoresponse of layered ReS₂ phototransistors in depth. Angel-resolved Raman spectrum and field-effect mobility are tested to confirm the inconsistency between its electrical and optical anisotropies, which are along 120° and 90°, respectively. We further measured the angle-resolved photoresponse of a ReS₂ transistor with 6 diagonally paired electrodes. The maximum photoresponsivity exceeds 0.515 A·W^-1 along b-axis, which is around 3.8 times larger than that along the direction perpendicular to b axis, which is consistent with the optical anisotropic directions. The incident wavelength- and power-dependent photoresponse measurement along two anisotropic axes further demonstrates that b axis has stronger light-ReS₂ interaction, which explains the anisotropic photoresponse. We also observed angle-dependent photoresistive switching behavior of the ReS₂ transistor, which leads to the formation of angle-resolved phototransistor memory. It has simplified structure to create dynamic optoelectronic resistive random access memory controlled spatially through polarized light. This capability has great potential for real-time pattern recognition and photoconfiguration of artificial neural networks (ANN) in a wide spectral range of sensitivity provided by polarized light.     

双折射现象的电磁理论解释

双折射现象中,一束光线在晶体中传播时会被分成寻常光线和非常光线,并且这两束光线的波阵面明显不同。本文从电磁学的角度对上述现象发生的机理进行探讨,以期为双折射现象的研究提供新的思路。