金属/AlGaN/GaN横向肖特基二极管器件结构的改进

本文采用Schrodinger方程与统计力学方程联立的方法,研究了金属/AlGaN/GaN异质结横向肖特基二极管正极电流分布不均匀的现象,提出了缓解电流集边效应的二极管结构的改进。     

Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy

The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy （HVPE） is investigated. By decreasing the reactor pressure from0. 7 to 0.5 mm, the GaN layer growth mode changes from the island-like one to the step flow. The improvements in structural and optical properties and surface morphology of GaN layers are observed in the step flow growth mode. The results clearly indicate that the reactor pressure, similarly to the growth temperature, is One of the important parameters to influence the qualities of GaN epilayers grown by HVPE, due to the change of growth mode.     

硅纳米晶的制备及影响其光致发光因素研究

经过大量的实验得出硅纳米晶(Si-nc)的发光波长位置在750nm附近,从而验证了Si-nc的制备成功.其次,研究了在Si-nc的制备过程中制备不同的多层结构,掺杂不同的稀土元素,是否钝化等方法对材料进行处理后的Si-nc的光致发光强度,其实验结果表明多层结构对Si-nc的发光强度有一定的影响,掺杂不同的稀土元素后Si-nc的发光强度不同,且猝灭效应会降低Si-nc的发光强度,而钝化方法可提高Si-nc的发光强度.     

Theoretical Analysis of Current Crowding Effect in Metal/AIGaN/GaN Schottky Diodes and Its Reduction by Using Polysilicon in Anode

There exists a current crowding effect in the anode of AIGaN/GaN heterojunction Schottky diodes, causing local overheating when working at high power density, and undermining their performance. The seriousness of this effect is illustrated by theoretical analysis. A method of reducing this effect is proposed by depositing a polysilicon layer on the Schottky barrier metal. The effectiveness of this method is provided through computer simulation. Power consumption of the polysilicon layer is also calculated and compared to that of the Schottky junction to ensure the applicability of this method.     

Effect of Ⅲ/Ⅴ Ratio of HT-AIN Buffer Layer on Polarity Selection and Electrical Quality of GaN Films Grown by Radio Frequency Molecular Beam Epitaxy

We investigate the effect of A/N ratio of the high temperature （HT） AIN buffer layer on polarity selection and electrical quality of GaN films grown by radio frequency molecular beam epitaxy. The results show that low Al/N ratio results in N-polarity GaN films and intermediate Al/N ratio leads to mixed-polarity GaN films with poor electrical quality. GaN films tend to grow with Ga polarity on Al-rich AIN buffer layers. GaN films with different polarities are confirmed by in-situ reflection high-energy electron diffraction during the growth process. Wet chemical etching, together with atomic force microscopy, also proves the polarity assignments. The optimum value for room-temperature Hall mobility of the Ga-polarity GaN film is 703cm^2/V.s, which is superior to the N-polarity and mixed-polarity GaN films.     

基于静止无功补偿器动态相量模型的混合仿真算法

为了提高含非线性元件电力系统的仿真速度,采用动态相量技术,提出了机电暂态与动态相量（TSP—DP）混合仿真算法,推导了考虑谐波特性的静止无功补偿器（SVC）的动态相量模型,并基于网络分解思想,将外部系统使用传统准稳态模型进行机电暂态仿真;SVC采用动态相量模型进行电磁暂态仿真,并嵌入传统机电暂态仿真程序,2种仿真通过接口母线进行数据交换和仿真协调,以实现全网的TSP—DP混合仿真、在含SVC的1EEE9母线和新英格兰39母线系统上进行了仿真验证,结果说明TSP—DP混合仿真算法具有与DCGEMTP全网电磁暂态仿真相同的精度,比传统混合仿真效率提高了1倍。     

Growth of Strain Free GaN Layers on （0001） Oriented Sapphire by Using Quasi-Porous GaN Template

We report the reduced-strain gallium-nitride （GaN） epitaxial growth on （0001） oriented sapphire by using quasiporous GaN template. A GaN film in thickness of about 1 μm was initially grown on a （0001） sapphire substrate by molecular beam epitaxy. Then it was dealt by putting into 45% NaOH solution at 100℃ for lOmin. By this process a quasi-porous GaN film was formed. An epitaxial GaN layer was grown on the porous GaN layer at 1050℃ in the hydride vapour phase epitaxy reactor. The epitaxial layer grown on the porous GaN is found to have no cracks on the surface. That is much improved from many cracks on the surface of the GaN epitaxial layer grown on the sapphire as the same as on GaN buffer directly.     

慈竹生态的初步研究

慈竹(Sinocalamus affinis)为四川最普遍之一类.用途非常之广,农家房前屋后栽陪普遍,其笋煑后可食用.关于本种之竹材力学性质曾作有精密实验,谓其价值可以超过铝合金,试制层竹成功,实为飞机制造工业及其它工程上之良好材料.特别是一九五八年七月,中国植物学会第二届全国理事会扩大会议植物生态与地植物学组专业会议决定,竹类两年内要提高单位面积产量3——5倍.为此.有必要给以生态学上研究,通过慈竹生态研究掌握其生长发育规律,然后按其规律本身需要,来改进慈竹的经营管理,以提高单位面积的产量.我们对于慈竹生态的研究,只是一种尝试性的摸索,一个初步的研究,我们都是初学者,所以缺乏一整套的竹子生态研究方法.我们是把个体生态与群体生恣结合起来,企图揭示慈竹生态规律.因此在方法上,还采用了地     

Properties of GaN on different polarity buffer layers by hydride vapour phase epitaxy

This paper reports on N-, mixed-, and Ga-polarity buffer layers are grown by molecular beam epitaxy (MBE) on sapphire (0001) substrates, with the GaN thicker films grown on the buffer layer with different polarity by hydride vapour epitaxy technique (HVPE). The surface morphology, structural and optical properties of these HVPE-GaN epilayers are characterized by wet chemical etching, scanning electron microscope, x-ray diffraction, and photoluminescence spectrum respectively. It finds that the N-polarity film is unstable against the higher growth temperature and wet chemical etching, while that of GaN polarity one is stable. The results indicate that the crystalline quality of HVPE-GaN epilayers depends on the polarity of buffer layers.     

吡咯并二氢吲哚(+)-Flustramine B的立体选择性合成

吡咯并二氢吲哚和二吡咯并二氢吲哚代表着一类结构复杂的聚二氢吲哚生物碱,它们广泛存在于植物、海藻和两栖动物中[1].这类生物碱具有显著的生物活性,例如,从霉菌源分离出的( )-Flustramine B是缩胆囊肽和神经激肽受体的有力抗体[2].目前仅有Flustramine B的两个合成被报道,且两个都是外消旋形式[3].这里,我们将通过有机催化的吡咯并二氢吲哚的合成技术,一步对应选择性地合成Flustramine的溴-三环系统.