SSCH3光解离的多参考理论计算

摘要运用多参考微扰理论(Multireference MΦller-Plesset theory)计算了SSCH3垂直激发能及其S-C与S-S两种断键方式的绝热(Adiabatic)与非绝热(Diabatic)的基态和激发态势能曲线, 研究了在193nm激光作用下SSCH3的光解离过程, 理论计算值与实验值相符.     

用共线性离子束—激光光谱学研究NdⅡ能级的超精细结构

共线快离子束－激光光谱学具有选择性激发,测量精度高等优点而被用于研究原子、分子和原子的同位素位移,激发寿命和超精细结构,介绍了利用快离子束－激光共线技术测量ＮｄⅡ亚稳态４ｆ＾４５ｄ＾６Ｋ１３／２和激发态（２５５２４）１３／２°的超精细结构,并定出相应的超精细相互作用常数。     

微波硫灯发射光谱的理论模拟

通过实验观测了微波硫灯的发光光谱. 利用从头计算的多组态准简并微扰理论方法, 采用cc-pVQZ基组计算了S2分子B3Σu--X3Σg-态和B″3Πu-X3Σg-态的跃迁矩及其振动态之间跃迁的弗兰克-康登因子, 导出了S2分子振动分辨发射谱. 同时, 利用含时密度泛函方法计算了Sn(n=2~8)分子的吸收谱. 将计算得到的S2分子振动分辨发射谱与实验所测得的光谱分布进行了比较分析, 解释了微波硫灯的宽谱区发光光谱的特性.     

S3解离中的非绝热过程

采用量子力学从头计算方法研究了硫的三聚物S_３低激发态解离过程.构造了S_３分子的解离极限.对态态间跃迁极矩的计算表明，在势能曲面的交叉区域态态间存在相互转换的非绝热过程，从而确定了在S_３解离为S₂的复杂过程中，非绝热预解离是重要的解离通道. 关键词： ３')" href="#">S_３ 从头算 预解离 非绝热     

Y掺杂WS2二维材料的第一性原理研究

WS₂由于其优异的物理和光电性质引起了广泛关注。本研究基于第一性原理计算方法,探索了本征单层WS₂及不同浓度W原子替位钇(Y)掺杂WS₂的电子结构和光学特性。结果表明本征单层WS₂为带隙1.814 eV的直接带隙半导体。进行4%浓度(原子数分数)的Y原子掺杂后,带隙减小为1.508 eV,依旧保持着直接带隙的特性,随着Y掺杂浓度的不断增大,掺杂WS₂带隙进一步减小,当浓度达到25%时,能带结构转变为0.658 eV的间接带隙,WS₂表现出磁性。适量浓度的掺杂可以提高材料的导电性能,且掺杂浓度增大时,体系依旧保持着透明性并且在红外光和可见光区对光子的吸收能力、材料的介电性能都有着显著提高。本文为WS₂二维材料相关光电器件的研究提供了理论依据。     

Multireference calculations on low-lying states and the X~3 Π_u -~3 Π_g absorption spectra of indium dimers

Multireference configuration interaction calculations are carried out on 11 Λ-S low-lying electronic states of indium dimers. The states are investigated with spin-orbit pseudopotentials via the state-interacting method, and characterized by fitted spectroscopic constants based on computed potential energy curves. The vibrational structures of the double-potential well 0+g (I) ( 3 Σ g ) state are also analyzed. The experimentally observed absorption spectrum centred at ～ 13000cm-1 is simulated and assigned to X 3 Πu (v=0)-3Πg transition according to the present ab initio calculations on transition energies and dipole moment functions.     

Multi-reference calculations of the photodissociation of HSCH3 molecule

This paper performs multi-reference second-order perturbation theory calculations on the ground state and a number of low-lying excited states of HSCH3 molecule, and calculates the vertical excitation energies and low-energy potential-energy curves, based on which the photodissociation channels of HSCH3 at 193,222,248 nm are clarified.     

Ab Initio Calculations of Differential Cross Sections for Single Charge Transfer in ^3He^2＋ ＋ ^4He Collisions

The single charge transfer process in ^3He^2＋ ＋ ^4He collisions is investigated using the quantum-mechanical molecular- orbital close-coupling method, in which the adiabatic potentials and radial couplings are calculated by using the ab initio multireference single- and double-excitation configuration interaction methods. The differential cross sections for the single charge transfer are presented at the laboratorial energies E = 6 keV and lOkeV for the projectile ^3He^2＋. Comparison with the existing data shows that the present results are better in agreement with the experimental measurements than other calculations in the dominant small angle scattering, which is attributed to the accurate calculations of the adiabatic potentials and the radial couplings.     

Electronic Curves Crossing in Methyl Iodide by Spin--Orbit Ab Initio Calculation

An ab initio investigation of electronic curve crossing in a methyl iodide molecule is carried out using spin-orbit multiconfigurational quasidegenerate perturbation theory. The one-dimensional rigid potential curves and optimized effective curves of low-lying states, including spin-orbit coupling and relativistic effects, are calculated. The spin-orbit electronic curve crossing between ^3Qo＋ and ^1Q1, and the shadow minimum in potential energy curve of ^3Qo＋ at large internuclear distance are found in both sets of the curves according to the present calcu- lations. The crossing position is in the range of Re-1 = 0.2370 3：0.0001 nm. Comparisons with other reports are presented.     

新型一维链状氰根桥联配合物 [Eu(DMF)4(H2O)2Mn(CN)6.H2O]n的合成与晶体结构

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