双核锰配合物的合成,表征和性质

报道了对称的八齿（Ｎ６Ｏ２型）双核配体Ｎ，Ｎ，Ｎ′，Ｎ′－四（２′－苯并咪唑甲基）－１，４－二乙氨基乙二醚（ＥＧＴＢ）及两种含锰（Ⅱ）双核配合物：（Ｍｎ２ＥＧＴＢ（ＯＡｃ）２）（ＢＰｈ２）．３Ｈ２Ｏ（Ｉ），（Ｍｎ２ＥＧＴＢ（ＯＡｃ）Ｃｌ）Ｃｌ２．２ＣＨ３ＯＨ．Ｈ２Ｏ（Ⅱ），对（Ｉ），（Ⅱ）进行了＾１ＨＮＭＲ，ＵＶ－Ｖｉｓ，摩尔电导，中远红外，ＥＳＴ和循环伏安研究，初步推测配合物（Ｉ）和（Ⅱ）分别具     

Oracle数据库中主键的智能生成

介绍了一种在Oracle数据库中利用序列和触发器智能生成数据库表主键的方法。通过对所创建的一个简单地主键智能生成器的测试和分析，发现了单纯用行级触发器生成主键存在的局限性，并给出了相应的解决办法。     

Interface states in Al_2O_3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor(MOS) structures. Two types of device structures, namely, the recessed gate structure(RGS) and the normal gate structure(NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ETin both devices have been determined. Furthermore,the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching(RIE).     

精密控制测量在铁路工程中的应用研究

本文以笔者参与的京沪高速铁路精密工程控制测量为工程背景,研究探讨了铁路工程中精密控制测量的具体实施流程和方法,全文是笔者工作实践基础上的理论升华,相信对从事相关工作的同行能有所裨益。     

闪速存储器中应力诱生漏电流的产生机理

通过实验研究了闪速存储器存储单元中应力诱生漏电流(SILC)的产生机理. 研究结果表明，在低电场应力下，其可靠性问题主要是由载流子在氧化层里充放电引起，而在高电场下，陷阱和正电荷辅助的隧穿效应导致浮栅电荷变化是引起闪速存储器失效的主要原因. 分别计算了高场应力和低场应力两种情况下SILC中的稳态电流和瞬态电流的大小. 关键词： 闪速存储器 应力诱生漏电流 电容耦合效应 可靠性     

Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions

A novel Ga N-based vertical heterostructure field effect transistor(HFET) with nonuniform doping superjunctions(non-SJ HFET) is proposed and studied by Silvaco-ATLAS,for minimizing the specific on-resistance(R_(on)A) at no expense of breakdown voltage(BV).The feature of non-SJ HFET lies in the nonuniform doping concentration from top to bottom in the n-and p-pillars,which is different from that of the conventional Ga N-based vertical HFET with uniform doping superjunctions(un-SJ HFET).A physically intrinsic mechanism for the nonuniform doping superjunction(non-SJ) to further reduce R_(on)A at no expense of BV is investigated and revealed in detail.The design,related to the structure parameters of non-SJ,is optimized to minimize the R_(on)A on the basis of the same BV as that of un-SJ HFET.Optimized simulation results show that the reduction in R_(on)A depends on the doping concentrations and thickness values of the light and heavy doping parts in non-SJ.The maximum reduction of more than 51% in R_(on)A could be achieved with a BV of 1890 V.These results could demonstrate the superiority of non-SJ HFET in minimizing R_(on)A and provide a useful reference for further developing the Ga N-based vertical HFETs.     

一种改进的DyTrust信任模型

为了提高DyTrust模型信任评价的准确度,解决信任模型的粒度比较粗糙以及节点的个体经验对信任评价带来影响的问题,在DyTrust模型的基础上,通过对节点所提供的服务进行细化和引入经验因子的方法,提出了一种改进的信任评价算法.与DyTrust模型的比较和分析表明,改进后的模型精化了信任算法的粒度,提高了信任评价的准确度,体现了节点的个性化特性,在反馈可信度的算法方面有较大的改善,同时该反馈可信度算法具有较好的可扩展性.     

Effects of Annealing on Schottky Characteristics in A1GaN/GaN HEMT with Transparent Gate Electrode

A1GaN/GaN heterostructure transistors are promising for power and switching applications. In addition, the transparent wide band-gap A1GaN/GaN heterostructure systems have received considerable attention to transparent electronics. Nowdays, Al-doped ZnO （AZO） thin film plays an increas- ingly important role in various fields of transparent electronics.The AZO-gated A1GaN/GaN HEMT with good dc characteristics and frequency character- istics has been reported. Annealing is widely used to improve the electri- cal characteristics of A1GaN/GaN HEMTs. It is re- ported that the Schottky leakage current can be re- duced by over four orders of magnitude by annealing in an A1GaN/GaN heterostructure with ITO/Ni/Au electrode. Pei et al. reported that the transparency of Ni/ITO gates of A1GaN/GaN HEMTs has been sig- nificantly improved after annealing. However, the evaluation of Schottky C V characteristics was ab- sent. Up to now, few results are reported on the Schot- tky annealing characteristics of AZO in A1GaN/GaN HEMT. Thus the effects of annealing on the leakage current, transparency and interface states character- istics need further study.     

Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique

Self-heating in a multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of the AlGaN/GaN HEMT is estimated from the calibration curve of a passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1°C is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.     

项目式教学法在《机械制图》课程中的应用

项目教学法是师生通过共同实施一个完整的项目而进行的教学活动。从项目的设立、重构与整合到实施,教师起着很重要的作用,本文就项目式教学中的一些原则进行了阐述。