奇函数的不动点的个数是奇数吗?

刘和邦老师文中的观点是正确的,刊出论文,谨表谢意,并以示更正.     

基于射频模块MAX2740设计的高动态GPS接收机前端

基于MAX2740射频接收前端提供了从天线到数字化输入之间完备的GPS接收方案，信号通道包括了低噪声放大器（LNA）、两级下变频器、可变增益／固定增益放大器、压控振荡器（VCO）及频率合成器等。     

电场对水结构的影响—电场处理水的应用机理研究

水经电场作用后，能使其内部结构发生变化，造成它的理化特性出现一系列改变，根据所提供的实验数据，提出电场可引起部分水分子的氢氧键断裂，使水中出现过量的超氧阴离子自由基，过氧化氢及自由质子，这一结论可满意地解释如下现象：用电处理水喂养纤毛虫，其分裂速度加快；受电场刺激的鱼胚胎，其孵化率，存活率明显提高，其后期生长速度加快等。     

电子线路的数值优化设计

研究了电子线路的数值化设计方法.它是一种自动化程度高、通用性强、精度高的电路设计方法。介绍了电子线路数值优化设计软件系统YJX—1.它具有广泛的通用性和快速收敛的特点。     

Ⅱ型平面动力裂纹线场的弹塑性精确解

本采用线场分析方法对理想弹塑性Ⅱ型平面应力裂纹裂纹线附近的应力场及弹塑性边界进行了精确分析，本完全放弃了小范围屈服条件，探讨了弹塑性边界上弹塑性应力场匹配条件的正确提法，通过将裂纹线附近塑性区应力场的通解（而不是过去采用的特解）与弹性应力场的精确解（而不是通常的裂尖应力强度因子Ｋ场）在裂纹线附近的弹塑性边界上匹配，本得出了塑性区应力场，塑性区长度及弹塑性边界的单位法向量在裂纹线附近的足够精确     

Fabrication and Characterization of Ni Thin Films Using Direct-Current Magnetron Sputtering

Ni films are deposited by using ultra high vacuum dc magnetron sputtering onto silicon substrates at room temperature, and the high-quality and high-density films are prepared. The parameters, such as thickness, density and surface roughness, are obtained by using small-angle x-ray diffraction (XRD) analyses with the Marquardt gradient-expansion algorithm. The deposition rate is calculated and the Ni single layer can be fabricated precisely. Based on the fitting results, we can find that the surface roughness of the Ni films is about 0.7nm, the densities of Ni films are around 97% and the deposition rate is 0.26nm/s. The roughness of the surface is also characterized by using an atomic force microscope (AFM). The changing trend of the surface roughness in the simulation of XRD is in good agreement with the AFM measurement.     

Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory

The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.