羊毛角蛋白保护金纳米簇的制备及表征

利用羊毛角蛋白作为还原剂,制备了具有高荧光性能的金纳米簇。采用荧光光谱仪、紫外-可见吸收光谱仪、傅里叶变换红外光谱仪及透射电子显微镜对试样的结构与性能进行了表征。结果表明,羊毛角蛋白中的巯基在合成金纳米簇的过程中起着关键作用。巯基含量越多,所得到的金纳米簇的荧光强度越高,其中高硫角蛋白合成的金纳米簇(WK_2@AuNCs)的荧光强度是低硫角蛋白合成的金纳米簇(WK_1@AuNCs)的3倍,且前者的粒径要大于后者。分析二级结构含量可知,α-螺旋结构的减少和β-折叠结构的增加是导致荧光强度增加的主要原因。     

羊毛角蛋白基金纳米团簇的制备及其打印成像的应用

利用羊毛角蛋白作为还原剂和稳定剂合成金纳米团簇溶液,通过可见光和紫外光的对比图像以及荧光光谱对pH值、反应温度和反应时间3个影响因素进行分析,确定金纳米团簇合成的最优方案。采用透射电子显微镜观察金纳米团簇的尺寸及分布,并将羊毛角蛋白基金纳米团簇用作打印墨水绘制荧光图案。试验结果表明:羊毛角蛋白和氯金酸的混合溶液调节为碱性(即NaOH浓度为1mol/L)、温度为37℃、反应时间为12h条件下所制备的羊毛角蛋白基金纳米团簇溶液在690nm处发射强烈荧光,所得的金纳米团簇颗粒的尺寸约为2.5nm且均匀分布,制得的打印墨水可以获得清晰的荧光图像。     

The residual C concentration control for low temperature growth p-type GaN

In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied.Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the residual C concentration:(i) the C concentration decreases with the increase of growth pressure;(ii) we have found there exists a Ga memory effect when changing the Cp_2 Mg flow which will lead the growth rate and C concentration increase along the increase of Cp_2 Mg flow;(iii) annealing outside of metal–organic chemical vapor deposition(MOCVD) could decrease the C concentration while in situ annealing in MOCVD has an immobilization role to C concentration.     

Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes

In order to suppress the electron leakage to p-type region of near-ultraviolet GaN/In_xGa_(1-x )N/GaN multiple-quantumwell(MQW) laser diode(LD), the Al composition of inserted p-type AlxGa_(1-x)N electron blocking layer(EBL) is optimized in an effective way, but which could only partially enhance the performance of LD. Here, due to the relatively shallow GaN/In_(0.04)Ga_(0.96)N/GaN quantum well, the hole leakage to n-type region is considered in the ultraviolet LD. To reduce the hole leakage, a 10-nm n-type Al_xGa_(1-x)N hole blocking layer(HBL) is inserted between n-type waveguide and the first quantum barrier, and the effect of Al composition of Al_xGa_(1-x)N HBL on LD performance is studied. Numerical simulations by the LASTIP reveal that when an appropriate Al composition of Al_xGa_(1-x)N HBL is chosen, both electron leakage and hole leakage can be reduced dramatically, leading to a lower threshold current and higher output power of LD.     

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

In order to investigate the inherent polarization intensity in InGaN/GaN multiple quantum well(MQW) structures,the electroluminescence(EL) spectra of three samples with different GaN barrier thicknesses of 21.3 nm, 11.4 nm, and 6.5 nm are experimentally studied. All of the EL spectra present a similar blue-shift under the low-level current injection,and then turns to a red-shift tendency when the current increases to a specific value, which is defined as the turning point.The value of this turning point differs from one another for the three InGaN/GaN MQW samples. Sample A, which has the GaN barrier thickness of 21.3 nm, shows the highest current injection level at the turning point as well as the largest value of blue-shift. It indicates that sample A has the maximum intensity of the polarization field. The red-shift of the EL spectra results from the vertical electron leakage in InGaN/GaN MQWs and the corresponding self-heating effect under the high-level current injection. As a result, it is an effective approach to evaluate the polarization field in the InGaN/GaN MQW structures by using the injection current level at the turning point and the blue-shift of the EL spectra profiles.     

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide

The upper waveguide(UWG) has direct influences on the optical and electrical characteristics of the violet laser diode(LD) by changing the optical field distribution or barrier of the electron blocking layer(EBL). In this study, a series of In GaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power(OLP) under an injecting current of 120 mA or the threshold current(Ith) is deteriorated when the UWG is u-In_(0.02)Ga_(0.98)N/GaN or u-In_(0.02)Ga_(0.98)N/Al_xGa_(1-x)N(0 ≤ x ≤ 0.1), which should be attributed to small optical confinement factor(OCF) or severe electron leakage. Therefore, a new violet LD structure with u-In_(0.02)Ga_(0.98)N/GaN/Al_(0.05)Ga_(0.95)N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally,the output light power under an injecting current of 120 mA is improved to 176.4 mW.     

Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes

Performances of blue and green laser diodes(LDs) with different u-InGaN upper waveguides(UWGs) are investigated theoretically by using LASTIP. It is found that the slope efficiency(SE) of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although its leakage current decreases obviously. Meanwhile the SE of the green LD increases when the indium content of u-InGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current and the small increase of optical loss. Therefore, a new blue LD structure with In_(0.05) Ga_(0.95)N lower waveguide(LWG) is designed to reduce the optical loss, and its slope efficiency is improved significantly.