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A series of a-Si:H films are deposited by hot wire assisted microwave
electron cyclotron resonant chemical vapour deposition
(HW-MWECR-CVD), subsequently exposed under simulated illumination for
three hours. This paper studies the microstructure change during
illumination by Fourier Transformation Infrared (FTIR) spectra. There
are two typical transformation tendencies of microstructure after
illumination. It proposes a model of light induced structural change
based on the experimental results. It is found that all samples
follow the same mechanism during illumination, and intrinsic
structure of samples affect the total H content. 相似文献
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Thermal modeling optimization and experimental validation for a single, concentrator solar cell system with a heat sink 下载免费PDF全文
A single concentrator solar cell model with a heat sink is established to simulate the thermal performance of the system by varying the number, height, and thickness of fins, the base thickness and thermal resistance of the thermal conductive adhesive. Influence disciplines of those parameters on temperatures of the solar cell and heat sink are obtained. With optimized number, height and thickness of fins, and the thickness values of base of 8, 1.4 cm, 1.5 mm, and 2 mm, the lowest temperatures of the solar cell and heat sink are 41.7℃ and 36.3℃ respectively. A concentrator solar cell prototype with a heat sink fabricated based on the simulation optimized structure is built. Outdoor temperatures of the prototype are tested. Temperatures of the solar cell and heat sink are stabilized with time continuing at about 37℃-38℃ and 35℃-36℃ respectively, slightly lower than the simulation results because of effects of the wind and cloud. Thus the simulation model enables to predict the thermal performance of the system, and the simulation results can be a reference for designing heat sinks in the field of single concentrator solar cells. 相似文献
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在不同的衬底温度下,使用反应射频磁控溅射法,在玻璃衬底上制备了氮化锌薄膜样品.用X射线衍射仪、原子力显微镜和椭偏仪对薄膜的晶体结构、表面形貌、光学性质进行了表征分析.薄膜的晶粒尺寸会随着衬底温度的升高先增大后减小,在200?C时薄膜的结晶性最好.用椭偏仪测试样品,建立物理模型计算出氮化锌薄膜在430—850 nm范围内的折射率和消光系数等光学参数.利用Tauc公式计算出氮化锌薄膜的光学带隙在1.73—1.79 eV之间. 相似文献
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高质量宽带隙立方氮化硼薄膜的研究进展 总被引:1,自引:0,他引:1
文章着重介绍了最近研制出的高质量宽带隙立方氮化硼薄膜的三种制备方法和结构特性 :(1)用射频溅射法在Si衬底上制备出立方相含量在 90 %以上 ,Eg>6 .0eV的c-BN薄膜 ;(2 )用离子束辅助的化学气相沉积法(CVD) ,在金刚石上外延生长出立方含量达 10 0 %的单晶c -BN薄膜 ;(3)用微波电子回旋共振CVD法 (MW -ECR-CVD)在金刚石上外延生长出高纯c-BN薄膜 .这些高纯c -BN薄膜 ,可应用于制作各种半导体 (主要是高温、高频大功率 )电子器件 . 相似文献
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QJ44型直流双臂电桥误差的计算邓金祥(北京工业大学物理系100022)现有的普物实验讲义中,对QJ44型直流双臂电桥误差的计算,有的根本没有提及,有的虽然给出了误差计算公式[1]或计算结果[2],但笔者认为亦有不妥之处.讲义[1、2]给出的误差实际... 相似文献
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GeSn (0.524 eV) single-junction thermophotovoltaic cells based on the device transport model 下载免费PDF全文
Xin-Miao Zhu 《中国物理 B》2022,31(5):58801-058801
Based on the transport equation of the semiconductor device model for 0.524 eV GeSn alloy and the experimental parameters of the material, the thermal-electricity conversion performance governed by a GeSn diode has been systematically studied in its normal and inverted structures. For the normal p+/n (n+/p) structure, it is demonstrated here that an optimal base doping Nd(a) = 3 (7)×1018 cm-3 is observed, and the superior p+/n structure can achieve a higher performance. To reduce material consumption, an economical active layer can comprise a 100 nm-300 nm emitter and a 3 μm-6 μm base to attain comparable performance to that for the optimal configuration. Our results offer many useful guidelines for the fabrication of economical GeSn thermophotovoltaic devices. 相似文献
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为了研究氢化非晶硅薄膜的稳定性,我们设计了一个在原子氢气氛中热退火的同时进行光诱导退火的实验(TLAH)。实验装置是由传统的微波电子回旋共振化学气相沉积系统改造而成为热丝辅助微波电子回旋共振化学气相沉积系统。为了对这一退火方法进行比较,对样品还进行了热退火、热退火同时进行光诱导退火。同时,为了定量地分析光电导衰退,我们假设光电导衰退遵循扩展指数规律:1/σph=1/σs-(1/σs-1/σ0)exp[-(t/τ)β],这里扩展指数参数β 和时间常数 τ 可从与 lnt 的线性关系中截距和斜率得到, 式中光电导饱和值σs可以通过在对数坐标系中表示的光电导和光照时间关系进行高斯拟合得到。实验结果显示:TLAH 方法可以提高氢化非晶硅薄膜的稳定性、改善其微结构和光电特性,同时还发现,光学带隙明显减小、荧光光谱显著地朝着低能方向移动。 相似文献