A New Dynamics Expansion Mechanism for Plasma during Pulsed Laser Deposition

The dynamics expansion mechanisms for plasma plume generated by pulsed laser radiation are studied in detail, taking account of plasma ionization effect. Based on the consideration of local conservations of mass, momentum, collected as the assumption that plasma can be viewed as compressible ideal fluid and high temperature-high pressure ideal gas, we develop a new dynamics expansion mechanism for plasma produced by pulsed laser radiation. Using the analytical method, the space number density and pressure evolvement of plasma in cylindrical coordinate are obtained, the dynamics evolvement equations are also derived. The results from the present model indicate that the plasma dynamic expansion behaviour can be evidently influenced by the ionization fraction η. Its effect is similar to a new dynamic source for plasma expansion and increases the expansion acceleration in all directions. The predictions of the expansion of the plasma is affected by the temperature, the average atoms mass and the ionization degree of the plasma are consistent with the experimental results.     

界面二氧化硅层对二极管辅助硅基磁电阻效应影响的研究

本文制备了二极管辅助的晶体硅磁阻(magnetoresistance,MR)器件,研究了界面二氧化硅层的磁阻放大作用及器件在硅基磁电子器件中的可能应用.通过有与无二氧化硅层的实验对比,发现引入二氧化硅层后器件的磁阻在室温和1.2T磁场下达到了527%,磁阻性能提升了76%以上.通过对无磁场作用下伏安特性的测量,证明了氧化硅层的引入增加了界面电阻,通过等效电路分析,对相关机理进行了讨论.这项工作将为硅基磁电子器件的可能应用提供一种新的方法.     

Al2O3增强的Co2-C98/Al2O3/Si异质结的光伏效应

随着能源危机的加剧,太阳能电池作为开发和利用太阳能的一种普遍形式, 日益受到世界各国的重视.随着太阳能电池向着高效率、薄膜化、无毒性和原材料丰富的方向发展, 单纯的硅系太阳能电池已经无法达到这样的要求,因此新的材料和工艺的开发利用迫在眉睫. 本文研究了碳材料在硅异质节上实现光伏效应的改善及其可能在太阳能电池上的应用. 采用脉冲激光沉积方法制备的Co₂-C₉₈/Al₂O₃/Si异质结构在标准日光照射 (AM1.5, 100 mW/cm²)条件下,可获得0.447 V的开路电压和18.75 mA/cm²的电流密度, 转换效率可达3.27%.通过电容电压特性和暗条件下的电输运性能测量, 证明了氧化铝层的引入不但对单晶硅的表面起到了物理钝化作用,减小了反向漏电流, 使异质结界面缺陷、界面能级和复合中心减少,还起到了场效应钝化作用, 增加了异质结界面的势垒高度,增加了开路电压,使异质结的光伏效应显著增强.     

基于激光烧蚀的等离子体羽辉膨胀动力学机制研究

重点讨论了脉冲激光烧蚀技术中,在考虑等离子体电离效应时等离子体的空间动力学演化特征.首先将等离子体视为可压缩理想气体,根据局域质量守恒和动量守恒,给出了在柱面坐标系下的等离子体压力与空间数密度的变化规律.在此基础上,结合适当的边界条件,用解析法进行求解,得到了在考虑等离子体电离效应时的一组新的动力学演化方程.分析结果表明,电离度会使等离子体的速度沿各个方向都得到加速,等离子体的内部速度具有自相似表达形式.     

大学物理实验教学初探

本文阐述了实验教学中存在的一些问题 ,并提出了改进措施。     

Effect of Pulse Width and Fluence of Femtosecond Laser on Electron--Phonon Relaxation Time

The electron phonon relaxation time as functions of pulse width and fluence of femtosecond laser is studied based on the two-temperature model. The two-temperature model is solved using a finite difference method for copper target. The temperature distribution of the electron and the lattice along with space and time for a certain laser fluence is presented. The time-dependence of lattice and electron temperature of the surface for different pulse width and different laser fluence are also performed, respectively. Moreover, the variation of heat-affected zone per pulse with laser Auence is obtained. The satisfactory agreement between our numerical results and experimental data indicates that the electron-phonon relaxation time is reasonably accurate with the influences of pulse width and Auence of femtosecond laser.     

脉冲激光制膜技术烧蚀阶段的热特性研究

研究了用脉冲激光制备薄膜时激光烧蚀靶材的的全过程.从能量平衡原理出发,考虑气化带走热量的影响,分阶段地建立了含有气化项与热源项的适合于不同烧蚀阶段的热流方程,给出了相应的初始条件和边界条件.以单晶硅为例,用有限差分法进行模拟计算,得到了靶材在各个阶段温度随时间以及气化速度随时间的演化规律.结果表明,靶材熔融前(0相似文献   

用于输电线路的铝基超疏水表面抗覆冰研究

输电线路覆冰灾害危害及其预防现已成为一个迫切需要解决的问题.本文就铝基超疏水表面抗冰特性进行了研究,在铝片和输电铝线表面涂覆本文制备的硅基超疏水溶液,使铝基表面疏水角达到154.5°.具有超疏水性的铝基能有效防止水珠滞留在表面形成覆冰.通过恒湿恒温室模拟覆冰过程,观察并测量涂覆溶液前后表面的覆冰面积以及输电铝线脱冰力大小来反映抗覆冰特性,实验结果显示超疏水铝片表面的覆冰面积比普通铝片表面覆冰减少了40%并且具有超疏水表面的输电线上脱冰力减少了11N.实验结果对输电线路结冰问题的解决提供了新的思路.     

Continuously tunable sub-half-wavelength localization via coherent control of spontaneous emission

We propose a continuously tunable method of sub-half-wavelength localization via the coherent control of the spontaneous emission of a four-level Y-type atomic system,which is coupled to three strong coupling fields including a standing-wave field together with a weak probe field.It is shown that the sub-half-wavelength atomic localization is realized for both resonance and off-resonance cases.Furthermore,by varying the probe detuning in succession,the positions of the two localization peaks are tuned continuously within a wide range of probe field frequencies,which provides convenience for the realization of sub-half-wavelength atomic localization experimentally.     

Bias Voltage Controlled Positive Magnetoresistance of Fe0.05-C0.95/Si Heterostructures

Fe-doped amorphous carbon films of about lOOnm in thickness are deposited on n-type silicon substrates by pulsed laser deposition （PLD）, and positive magnetoresistance （MR） is observed for these Fe-doped amorphous carbon/n-Si heterostructures under current-perpendicular-to-plane configuration at forward bias. Two MR peaks are observed in the temperature range 40-120 K and the positive MR varies with applied bias voltage. This bias voltage controlled MR may be related to the maguetic-field-controlled freeze out effect and recombination through the deep trapping states in the Fe-doped carbon films.