凝胶微球复合调剖机理实验研究

通过玻璃刻蚀模型进行微观驱替实验,直观地分析了凝胶微球复合调剖过程及作用区域。基于核磁共振技术,设计了凝胶微球岩心驱替实验。对不同阶段驱替后岩心不同直径孔隙内的流体分布进行了研究,并对比凝胶微球复合调剖的优势。实验结果表明,凝胶微球复合调剖过程中凝胶优先进入高渗透层,驱替大孔隙中剩余油,并对大孔隙有封堵作用;则聚合物微球主要进入低渗层,增加了聚合物微球的利用率;并启动低渗透率层的原油,封堵了低渗层的主流通道,实现调剖驱油的双重目的。     

High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H_2O as an oxidizer

In this study,the high performance of InGaN/GaN multiple quantum well light-emitting diodes(LEDs) with Aldoped ZnO(AZO) transparent conductive layers(TCLs) has been demonstrated.The AZO-TCLs were fabricated on the n~+-InGaN contact layer by metal organic chemical vapor deposition(MOCVD) using H_2O as an oxidizer at temperatures as low as 400 ℃ without any post-deposition annealing.It shows a high transparency(98%),low resistivity(510 ~4 Ω·cm),and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer.A forward voltage of 2.82 V @ 20 mA was obtained.Most importantly,the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL(LED-Ⅲ),and by28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O_2 as an oxidizer(LED-Ⅱ),respectively.The results indicate that the AZO-TCL grown by MOCVD using H_2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application.     

聚合物老化降解的组分模型建立与应用

 聚合物老化降解是影响油藏中聚合物驱效果的重要因素.聚合老化降解表观上是其特征黏度和黏度降低的过程,实质是聚合物分子量断裂引起的大分子向小分子降解的过程,聚合物降解过程中分子量分布发生变化,但其总质量浓度不变.假设聚合物由多个不同分子量的纯组分构成,建立的多组分模型可以描述聚合物老化降解过程中各组分质量浓度变化的过程.基于组分模型的构建思想,将多组分模型进行简化处理,构建了聚合物降解的两组分模型.假设聚合物老化降解发生在两组分之间,平均分子量较大的高组分聚合物向分子量较小的低组分聚合物降解.通过拟合具体的实验数据得到两组分模型的两个参数:低组分聚合物特征黏度和降解系数,进而通过两组分模型描述聚合物降解过程中特征黏度的变化过程,再结合特征黏度与黏度的半经验公式表征聚合物降解过程中黏度的变化.相对于多组分模型,两组分模型的参数更易获取,也不失对聚合物降解机制的体现,可以通过两组分模型描述聚合物的老化降解过程.