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本文利用基于第一性原理的广义梯度近似方法分析研究透明导电氧化物CuScO2能带结构、态密度和杂质能级.计算结果表明,CuScO2的价带区主要由Cu的3d态和O的2p态构成,而导带区主要由Sc的3d态组成.在进行+U修正之后,随着U参量的增加,CuScO2的导带区发生分裂导致导带扩大,带隙也随之扩大,表明+U计算能较好地改进CuSc02带隙值;本文还比较分析了各种掺杂元素在CuSc02的杂质能级,发现Mg原子替位掺杂Sc能有效改善CuScO2的P型导电性能. 相似文献
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Using the first-principles methods,we study the formation energetics properties of intrinsic defects,and the charge doping properties of extrinsic defects in transparent conducting oxides CuCrO2.Intrinsic defects,some typical acceptortype,and donor-type extrinsic defects in their relevant charge state are considered.By systematically calculating the formation energies and transition energy,the results of calculation show that,V Cu,O i,and O Cu are the relevant intrinsic defects in CuCrO2 ;among these intrinsic defects,V Cu is the most efficient acceptor in CuCrO2.It is found that all the donor-type extrinsic defects have difficulty in inducing n-conductivity in CuCrO2 because of their deep transition energy level.For all the acceptor-type extrinsic defects,substituting Mg for Cr is the most prominent doping acceptor with relative shallow transition energy levels in CuCrO2.Our calculation results are expected to be a guide for preparing promising n-type and p-type materials in CuCrO2. 相似文献
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为了分析软地基的沉降规律,以某个高速公路的工程为例,利用BP神经网络对该工程的软土地基沉降数据进行拟合和优化分析。结果表明,使用BP神经网络方法对软土地基的沉降预测值合理,其精度优于一维固结理论方法,BP神经网络方法能成为有效预测软地基沉降数据的方法。 相似文献
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本文利用基于第一性原理的广义梯度近似方法分析研究宽禁带半导体材料CuYO2能带结构、晶格常数和态密度。计算结果表明,CuYO2的价带区主要由Cu的3d态和O的2p态构成,而导带区主要由Y的3d态组成。在进行+U修正之后,随着U参量的增加,CuYO2的价带区和导带区发生分裂,导带区中Y的3d主峰向高能区移动导致导带扩大,带隙也随之扩大,当U取值为3eV时导带底由L点转变为Γ点,表明+U计算主要修正CuYO2导带从而能较好的改进理论带隙值。 相似文献
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本文利用基于第一性原理的广义梯度近似方法分析研究宽禁带半导体材料CuYO2能带结构、晶格常数和态密度.计算结果表明,CuYO2的价带区主要由Cu的3d态和O的2p态构成,而导带区主要由Y的3d态组成.在进行+U修正之后,随着U参量的增加,CuYO2的价带区和导带区发生分裂,导带区中Y的3d主峰向高能区移动导致导带扩大,带隙也随之扩大,当U取值为3 eV时导带底由L点转变为T点,表明+U计算主要修正CuY2导带从而能较好的改进理论带隙值. 相似文献
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Using the first-principles methods,we study the formation energetics properties of intrinsic defects,and the charge doping properties of extrinsic defects in transparent conducting oxides CuCrO2.Intrinsic defects,some typical acceptortype,and donor-type extrinsic defects in their relevant charge state are considered.By systematically calculating the formation energies and transition energy,the results of calculation show that,V Cu,O i,and O Cu are the relevant intrinsic defects in CuCrO2 ;among these intrinsic defects,V Cu is the most efficient acceptor in CuCrO2.It is found that all the donor-type extrinsic defects have difficulty in inducing n-conductivity in CuCrO2 because of their deep transition energy level.For all the acceptor-type extrinsic defects,substituting Mg for Cr is the most prominent doping acceptor with relative shallow transition energy levels in CuCrO2.Our calculation results are expected to be a guide for preparing promising n-type and p-type materials in CuCrO2. 相似文献
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为研究碳表面对甲烷的吸附特性,采用基于密度泛函理论的第一性原理方法系统地研究了甲烷分子吸附在碳表面后的电子态密度、功函数和吸附能,同时研究了碳的表面能、层间弛豫与表面厚度之间的关系。计算结果表明,层间弛豫是由于相邻层间的弱相互作用引起的;顶位是甲烷最稳定的吸附部位;甲烷的吸附位置位于碳的碳原子上方3.21处,吸附能为-0.133 e V,与碳表面厚度关系不大;因少量电荷从碳表面转移到甲烷分子,甲烷吸附会使功函数略有增强。 相似文献
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研制开发新型的光电材料对促进社会经济发展具有重要的科学意义和实用价值.利用宽禁带CuInO_2铟基材料实现全透明光电材料是目前深入研究的热点.通过基于密度泛函的第一性原理计算方法,本文计算出掺杂元素Mg, Be, Mn在CuInO_2的形成能.计算结果表明,施主类缺陷(如掺杂元素替代Cu原子或进入间隙位置)由于较高的形成能和较深的跃迁能级,很难在CuInO_2材料中出现N型导电;而受主缺陷中,在氧原子化学势极大的情况下, Mg原子替代In能成为CuInO_2理想的受主缺陷.计算结果可为制备性能优异的CuInO_2材料提供指导. 相似文献