Controlled growth and field emission of vertically aligned AlN nanostructures with different morphologies

The controllable growth of three different morphologies of AlN nanostructures (nanorod, nanotip and nanocrater) arrays are successfully realized by using chemical vapour deposition (CVD) technology. All three nanostructures are of single crystal h-AlN with a growth orientation of [001]. Their growth is attributed to the vapour-liquid-solid (VLS) mechanism. To investigate the factors affecting field emission (FE) properties of AlN nanostructures, we compare their FE behaviours in several aspects. Experimental results show that AlN nanocrater arrays possess the best FE properties, such as a threshold field of 7.2~V/μm and an emission current fluctuation lower than 4%. Moreover, the three AlN nanostructures all have good field emission properties compared with a number of other excellent cathode nanomaterials, which suggests that they are future promising FE nanomaterials.     

不同西方许旺酵母接种量对复烤后烟叶增香提质的影响研究

为了使复烤烟叶增香提质,试验选用从烟叶表面筛选出的产香菌:西方许旺酵母(Schwanniomyces occidentalis)对兴义C3F复烤后烟叶进行固态发酵,并对烟叶的常规化学成分、香味物质和石油醚提取物含量进行检测,最后将发酵后的烟叶切丝后进行卷制成卷烟并进行评吸实验.研究结果表明:①经菌种发酵后,接种量为6.9%和接种量为13.8%的烟叶糖碱比均升高,但钾氯比无显著性变化;②接种量为6.9%的处理中共检测出香味物质58种,与另外两组相比其中有50种香味物质含量较高,包括苯甲醇、苯乙醇、芳樟醇、香叶基香叶醇、螺岩兰草酮、苯乙醛、α-大马酮、巨豆三烯酮、橙花基丙酮、3-羟基-β-二氢大马酮、茄酮、苯甲醛、二氢猕猴桃内酯、亚麻酸甲酯、亚油酸甲酯、硬脂酸甲酯、2-乙酰基吡咯等,与对照相比新植二烯含量增加了54.6μg/g;③经菌种发酵后,烟叶石油醚提取物含量没有显著性变化.④感官实验表明,接种量为6.9%的评吸结果最好,这和香味成分的结果一致.综上所述,西方许旺酵母对烟叶有一定的增香提质作用,接种量为6.9%时处理效果较好.     

No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature

The AlN nanostructures with a wide band-gap of 6.28 eV are considered as ideal cold cathode materials because of their low electron-affinity. Many methods have been devoted to fabricating AlN nanostructures, but high growth temperature over 800°C and the use of the catalysts in most methods limit their practical application and result in their poor field-emission behaviours in uniformity. This paper reports that without any catalysts, a simple chemical vapour deposition method is used to synthesize aligned AlN nanocone arrays at 550°C on silicon substrate or indium tin oxide glass. Field emission measurements show that these nanocones prepared at low temperature have an average turn-on field of 6 V/μm and a threshold field of 11.7 V/μm as well as stable emission behaviours at high field, which suggests that they have promising applications in field emission area.