TiB_2等C_(32)型化合物价电子结构分析

根据余瑞璜提出的“固体分子的经验电子理论”,在徐万东和余瑞璜处理过渡金属化合物晶体结合能及熔点理论基础上 ,研究 Ti B2 等高性能材料电子结构 .发现 IVB,VB族元素的硼化物熔点都比相应的单质有较大提高 ,原因是组成元素的杂阶升高 ,单键半距随杂阶升高而逐渐下降 .其杂阶组合与结合能及熔点的密切联系 ,表明用经验电子理论进行电子结构分析可为材料设计提供有力的理论指导 .另外几种金属化合物的键距差分析和结合能及熔点的计算实现了传统固体理论不能进行的复杂结构晶体电子结构及性能分析     

Electron Transport Properties of Two-Dimensional Monolayer Films from Au-P-Au to Au-Si-Au Molecular Junctions

We investigate the electronic-transport properties of two-dimensional monolayer films from Au-P-Au molecular junction to Au-Si-Au molecular junction using elastic scattering Green's function theory. In the process of replacing the P atoms with Si atoms every other line from the middle of monolayer blue phosphorus molecular structure, the substitution of Si atoms changes the properties of Au-P-Au molecular junction significantly. Interestingly, the current value has a symmetric change as a parabolic curve with the peak appearing in Au-Si_1P_1-Au molecular junction, which provides the most stable current of 15.00 nA in a wide voltage range of 0.70-2.70 V.Moreover, the current-voltage characteristics of the structures indicate that the steps tend to disappear revealing the property similar to metal when the Si atoms dominate the molecular junction.     

TiB2等C32型化合物价电子结构分析

根据余瑞璜提出的“固体分子的经验电子理论”,在徐万东和余瑞璜处理过渡金属化合物晶体结构及熔点理论基础上,研究ＴｉＢ２等高性能材料电子结构,发现ＩＶＢ,ＶＢ族元素的硼化物熔点都比相应的单质有较大提高,原因是组成元素的杂阶升高,单链米距随元素的硼化物熔点都比相应的单质有较大提高,原因是组成元素的杂阶升高,单链半距随杂阶升高而逐渐下降,其杂阶组合与结合能及熔点的密切联系,表明用经验电子理论进行电子结构分     

SiGe异质结双极晶体管基区渡越时间分析

对SiGe异质结双极晶体管(HBT)的基区渡越时间进行了计算和分析,考虑了基区掺杂和Ge组分分布对本征载流子浓度和电子迁移率的影响,以及大电流密度下产生的感应基区(CIB)的渡越时间.结果表明,Ge组分为转折点X1/Wb≈0.12的矩形-三角形分布时,可得到最小的基区渡越时间;Ge分布对SiGe和Si的有效态密度之比的影响很小,但对迁移率的影响较大;基区掺杂为指数分布或高斯分布对基区渡越时间影响很小.     

分子对飞秒激光场响应的含时密度泛函理论研究

采用含时密度泛函理论方法研究线性分子碳化锂（Li2C2）对飞秒激光场响应的电子-离子动力学行为。在典型的近共振和非共振的激光频率作用下,分别对比分析了分子的共振和非共振电离过程。研究发现：分子在共振频率激光场的作用下发生更强的电离过程,并倾向于发生库伦爆炸,键长的振荡断裂与电离相互促进影响,而分子在较弱的激光场作用下发生单光子电离过程;随着双脉冲时间间隔的增加,离化电子数在一定范围内呈振荡上升趋势,随后趋于常数。     

Two Possible Configurations for Silver-C60-Silver Molecular Devices and Their Conductance Characteristics

Coherent electronic transport properties of silver-C60-silver molecular junctions in different configurations are studied using hybrid density function theory. The experimentally measured current flows of （760 molecules adsorbed on the silver surface are well reproduced by theoretical calculations. It is found that the current-voltage characteristics of the molecular junctions depend strongly on the configurations of the junctions. Transmission spectra combined with density of states can help us to understand in depth the transport properties. Different kinds of electrode construction are also discussed. With the help of the calculation, two possible configurations of silver-C60-silver molecular junctions are suggested.     

分子对飞秒激光场响应的含时密度泛函理论研究

采用含时密度泛函理论方法研究线性分子碳化锂(Li2C2)对飞秒激光场响应的电子-离子动力学行为.在典型的近共振和非共振的激光频率作用下,分别对比分析了分子的共振和非共振电离过程.研究发现:分子在共振频率激光场的作用下发生更强的电离过程,并倾向于发生库伦爆炸,键长的振荡断裂与电离相互促进影响,而分子在较弱的激光场作用下发生单光子电离过程;随着双脉冲时间间隔的增加,离化电子数在一定范围内呈振荡上升趋势,随后趋于常数.     

Weak Gate Effect in 1,3-Benzenedithiol Molecular Device

We introduce a full interaction Hamiltonian method to the generalized quantum chemical approach and apply it to investigate the electron tunneling properties of 1,3-benzenedithiol molecular device. The weak gate effect we calculate is consistent with the experiment. The asymmetric current character mainly comes from the asymmetry of the molecule and the nonlinear responding to the gate electric field.