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采用溶胶-凝胶法在Pt/Ti/SiO2/Si衬底上制备了不同La掺杂浓度PLZT(x/40/60)薄膜- x射线衍射分析表明制备的PLZT(x/40/60)薄膜是具有单一钙钛矿结构的多晶薄膜- 通过红外椭圆偏振光谱仪测量了波长为2-5—12-6μm范围内PLZT薄膜的椭偏光谱,采用经典色 散模型拟合获得PLZT薄膜的红外光学常数,同时也拟合获得PLZT薄膜的厚度- 随着La掺杂浓 度的增大,折射率逐渐减小- 而消光系数除PLZT(4/40/60)薄膜外,呈现逐渐增大的趋势- 分析表明这些差异主要与PLZ
关键词:
PLZT薄膜
红外光学性质
红外椭圆偏振光谱 相似文献
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Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy 下载免费PDF全文
Based on our previous work,the influence of annealing conditions on impurity species in in-situ arsenic (As)-doped Hg 1 x Cd x Te (x ≈ 0.3) grown by molecular beam epitaxy has been systematically investigated by modulated photoluminescence spectra.The results show that (i) the doped-As acting as undesirable shallow/deep levels in as-grown can be optimized under proper annealing conditions and the physical mechanism of the disadvantage of high activation temperature,commonly assumed to be more favourable for As activation,has been discussed as compared with the reports in the As-implanted HgCdTe epilayers (x ≈ 0.39),(ii) the density of V Hg has an evident effect on the determination of bandgap (or composition) of epilayers and the excessive introduction of V Hg will lead to a short-wavelength shift of epilayers,and (iii) the V Hg prefers forming the V Hg-As Hg complex when the inactivated-As (As Hg or related) coexists in a certain density,which makes it difficult to annihilate V Hg in As-doped epilayers.As a result,the bandedge electronic structures of epilayers under different conditions have been drawn as a brief guideline for preparing extrinsic p-type epilayers or related devices. 相似文献
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根据多传感器的信息融合技术 ,在单片机的控制管理下研究了智能型压力变送器的非线性校正 ,通过模拟实验测出的标定数据的计算可知 ,校正后的多传感器的交叉灵敏度大大减少 ,从而提高了测量精度、性能的稳定性和运行的可靠性。 相似文献
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采用化学溶液方法在(111)Pt/Ti/SiO2/Si衬底上制备了Bi3.25La0.75Ti3O12(BLT)和Bi3.25Nd0.75Ti3O12(BNT)薄膜.x射线衍射测试表明,两种薄膜都为单一的层状钙钛矿结构.扫描电子显微镜分析显示,BNT薄膜由大而均匀的棒状晶粒组成,BLT薄膜的组成晶粒则较小.采用紫外-近红外椭圆偏振光谱仪测试了200-1700nm波长范围的椭圆偏振光谱,拟合得到薄膜的光学常数(折射率和消光系数)和厚度,确定BLT和BNT薄膜的禁带宽度分别为4.30和3.61eV,并采用单电子振子模型分析了薄膜在带间跃迁区的折射率色散关系. 相似文献
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Modulated photoluminescence spectra have been performed to investigate the impurity activation in MBE-grown As-doped Hg1-xCdxTe (x ≈ 0.3). The results show that the doped As mainly acting as donors in the as-grown samples can be fully activated as AsTe by two-stage anneals of 285℃/16 h + 240℃/48h, of which the ionization energy has been determined to be about lO.5 meV, slightly smaller than that of intrinsic VHg (about 14.5 meV). However, the higher activation temperature (e.g. 400℃) at the first-stage can produce large numbers of excessive VHg and seriously deteriorate the quality of epilayers. This couM give a brief guideline for preparing extrinsic p-type HgCdTe materials or devices. 相似文献
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等离子体熔炼含氮合金钢研究 总被引:1,自引:0,他引:1
在敞口镁砂坩埚内,采用金属水冷非转移弧和石墨转移弧等离子体,以氮、氩、氧等混合气体为氮合金化元素,冶炼含氮的铬锰镍合金和不锈钢,在30min内,不锈钢中含氮达0.15% ̄0.30%,代镍可达2% ̄6%。分析钢液氮合金化的热力学,动力学条件,研究化学吸附和电吸附氮的现象,提出了强化扩散和对流扩散,加速钢液吸氮速度,提高钢液氮含量的工艺条件。 相似文献
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