Effect of Te doping on superconductivity and charge-density wave in dichalcogenides 2H-NbSe2-xTex （x = 0, 0.1, 0.2）

Single crystals of Te-doped dichalcogenides 2H-NbSe2-xTex （x ---- 0, 0.10, 0.20） were grown by vapour transport method. The effect of Te doping on the superconducting and charge-density wave （CDW） transitions has been investigated. The sharp decrease of residual resistance ratio, RRR = R（3OOK）/R（SK）, with increasing Te content was observed, indicating that the disorder in the conducting plane is induced by Te doping. Meanwhile the superconducting transition temperature, Tc, decreases monotonically with Te content. However, the CDW transition temperature, TCDW, shown by a small jump in the temperature dependence of the resistivity near 30 K, increases slightly. The results show that the suppression of superconductivity might be caused by the enhancement of CDW ordering. The disorder has little influence on the CDW ordering.     

NiSi／Si（001）声子模式对称性分析

通过极化拉曼对以Si(001)为衬底、生长方向为NiSi[200]//Si[001]的NiSi薄膜材料的拉曼峰进行了声子模式的分组,确定实验得到的NiSi薄膜的六个拉曼峰分别属于三类声子模式.其中213 cm-1、295 cm-1和367 cm-1处拉曼峰属于Ag对称性;196 cm-1和254 cm-1处拉曼峰属于B3g时称性;401 cm-1处拉曼峰属于B1g或B2g对称性.     

适合基站放大器应用的图形化SOI LDMOSFET的设计与分析

设计了一种新型图形化SOI（pattemed-Silicon-On-Insulator）LDMOSFET（lateral doublediffused MOSFETs）结构,埋氧层在沟道下方是间断的.工艺和性能模拟分析表明,此结构具有SOI器件低泄漏电流和低输出电容的特性,而且能抑制自加热效应和浮体效应.当漂移区长度为3μm时,开态击穿电压可达到30V、关态电压为71V、截止频率6.2GHz、最大振荡频率20GHz,2GHz时、栅偏压3V时的输出功率为0.8W/mm、功率增益为28dB.这些电学参数适合2G、60V无线通讯基站功率放大器的要求.     

An analytical model for coplanar waveguide on silicon-on-insulator substrate with conformal mapping technique

In this paper, the authors present an analytical model for coplanar waveguide on silicon-on-insulator substrate. The four-element topological network and the conformal mapping technique are used to analyse the capacitance and the conductance of the sandwich substrate. The validity of the model is verified by the full-wave method and the experimental data. It is found that the inductance, the resistance, the capacitance and the conductance from the analytical model show they are in good agreement with the corresponding values extracted from experimental S-parameter until 10 GHz.