直流偏磁场对第二类哑玲畴长度的影响

本文通过研究直流偏磁场Ｈｂ对标称成份为（ＹＳｍＣａ）３（ＦｅＧｅ）５Ｏ１２石榴石磁泡材料中第二类哑铃畴（ＩＤ）长度的影响，观察到：１）ＩＤ的长度随Ｈｂ的升高而缩短；２）经过直流偏场从低到高两次大幅度地准静态升降，ＩＤ长度与Ｈｂ的关系曲线基本重合；３）随着Ｈｂ的升高，直至ＩＩＤ缩灭的过程中，较长ＩＤ与较短ＩＤ的长度比变化不大．这些实验现象暗示，在Ｈｂ的准静态变化过程中ＩＤ畴壁中的垂直布洛赫线（ＶＢＬ）数目保持不变     

软畴段在面内磁场作用下的行为

实验研究发现Ｈｉｐ对软畴段的条泡转变场Ｈｓｂ和磁泡缩灭场ＨＯ有较大影响，而且Ｈｓｂ和ＨＯ随Ｈｉｐ的变化与样品晶向有关     

ANNIHILATION OF VERTICAL-BLOCH-LINE CHAINS IN THE WALLS OF ORDINARY HARD BUBBLES SUBJECTED TO JOINT STATIC BIAS FIELD AND IN-PLANE FIELD

For the ordinary hard bubbles(OHBs) of garnet bubble films, the annihilation of the vertical-Bloch line (VBL) chains in their walls subjected to joint static bias field H_b and in plane field H_ip was experimentally studied. The curves of two critical in-plane fields, H⁽¹⁾_ip and H′_ip, vs H_b were measured. By means of the so-called "head-cut" and "tail-cut" experiments designed in this work, it was verified that for the OHBs subjected to H_ip, their VBL chains with different lengths lose VBLs and become shorter simultaneously. It was also verified that the critical in-plane fields H⁽¹⁾_ipand H′_ip correspond to the break down of the shortest and longest VBL chains of OHBs, respectively.     

STABILITY OF SECOND KIND OF DUMBBELL DOMAINS SUBJECTED TO AN IN-PLANE FIELD AT DIFFERENT BIAS FIELDS

The softening process of the second kind of dumbbell domalns(liDs) in garnet bubble films subjected to an in-plane field H_ip at different static bias field H_b was studied experimentally. It was found that when H_b is larger, the remaining percentage of IID, R_IID, drops sharply at a certain H_ip, and with the increase of H_b the drop occurs at lower H_ip and becomes more intensive. We have confirmed that this is related to the "spontaneous-shrink" 0f IIDs, which plays an important role for the breakdown oF vertical Bloeh line chains of lids subjected to joint fields H_ip and H_b .     

石榴石磁泡膜中哑铃畴缩灭行为的进一步研究

通过对于第一类哑铃畴（ＩＤ）缩灭行为的实验研究，发现在直流偏场增加的过程中，ＩＤ以稳定的圆形畴存在的直流偏场范围ΔＨｂ随着其条泡转变场的增加而减小，直至趋于零．据此也讨论了第二类哑铃畴的缩灭行为     

面向场对处于直流偏磁场压缩状态下的ⅡD畴壁中布…

实验研究了面内场Ｈｉｐ对处于直流偏场Ｈｂ压缩状态下ⅡＤ畴壁中的垂布洛赫线链的影响，发现存在一个阈值直流偏场口口口口Ｈｂ）ｔｈ，当Ｈｂ〈（Ｈｂ）ｔｈ时，使ⅡＤ开始转变为ＩＤ、ＯＨＢ和ＳＢ的临界面内场     

面内场作用下第一类哑铃畴的条泡转变与直流偏场关系的…

本文研究面内磁场作用下第一类哑铃畴的条泡转变与固定直流偏场（Ｈｂ）ｆ的关系。实验结果显示：（１）使ＩＤ发生条泡转变包需的面内场（Ｈｉｐ）ｓｂ随所高定的直流偏场（Ｈｂ）ｆ的增加而减小；（２）存在一个特征直流偏场（Ｈｂ）ｆ１，当（Ｈｂ）ｆ１时，在面内场     

面内磁场和直流偏磁场共同作用下第Ⅱ类哑铃畴的稳定性

实验研究了面内磁场Ｈｉｐ对处于直流偏磁场Ｈｂ作下的第Ⅱ类哑铃畴的稳定性的影响。     

X射线衍射仪精确测定点阵常数的研究

Ｘ射线衍射测定晶体点阵常数是基本的实验方法．用普通Ｘ射线衍射仪粉末法测定硅点阵常数，比较了不同测试方法和计算方法，以定点扫描三点抛物线法定峰、ｃｏｓ２θ外推法计算结果最佳．