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王文新 《兰州大学学报(自然科学版)》2006,42(4):131-134
证明了NBUMg寿命分布类关于卷积运算的封闭性,并比较了当元件属于NBUMg寿命分布类时,年龄更换策略的NBUMg性质. 相似文献
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Incorporation Behaviour of Arsenic and Phosphorus in GaAsP/GaAs Grown by Solid Source Molecular Beam Epitaxy with a GaP Decomposition Source
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The incorporation behaviour of arsenic and phosphorus in the GaAsP ternary alloy under phosphorus-rich conditions is studied based on the incorporation coefficient model and the growth diffusion model combined with the alloy composition data obtained by high resolution x-ray diffraction analysis. It is found that As adatoms have longer surface lifetime and longer migration length than those of P adatoms, which leads to an arsenic incorporation efficiency much higher than that of phosphorous. With the increase of arsenic flux, the surface lifetime of arsenic adatoms decreases due to the competition of As adatoms. The detailed analysis and discussion are given here. 相似文献
4.
Effect of Dopant Concentration in a Base Layer on Photocurrent——Voltage Characteristics of Photovoltaic Power Converters
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It is known that the p–n junction of an absorption region is a crucial part for power conversion efficiency of photovoltaic power converters. We fabricate four samples with different dopant concentrations in base layers.The dependences of power conversion efficiency and fill factor on input power are displayed by photocurrent–voltage measurement. Photoluminescence characteristics under open circuit and connected circuit conditions are also studied. It is found that the status of p–n junction mat... 相似文献
5.
Submonolayer Bi and Au adsorptions on the GaAs(001)-2× 4 surface are investigated by scanning tunnelling microscopy, low energy electron diffraction and first-principles calculations. The 1 ×4 and 3 × 4 reconstructed surface induced by Bi and Au, respectively, are revealed and their structural models are proposed based on experiments and first-principles calculations. Moreover, the validity of the recently proposed generalized electron counting (GEC) model [Phys. Rev. Lett. 97 (2006) 126103] is examined in detail by using the two surfaces. The GEC model perfectly explains the structural features, such Bi-1 × 4 surface and the 3x arrangement of four-atom Au as the characteristic short double-line structure in the clusters. 相似文献
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According to the well-established light-to-electricity conversion theory,resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent,which have been observed in quantum dots without a p–n junction at an external bias.Here,we experimentally observed more than 88% of the resonantly excited photo carriers escaping from In As quantum dots embedded in a short-circuited p–n junction to form photocurrent.The phenomenon cannot be explained by thermionic emission,tunneling process,and intermediate-band theories.A new mechanism is suggested that the photo carriers escape directly from the quantum dots to form photocurrent rather than relax to the ground state of quantum dots induced by a p–n junction.The finding is important for understanding the low-dimensional semiconductor physics and applications in solar cells and photodiode detectors. 相似文献
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用固源分子束外延技术(SSMBE)在GaAs(111)衬底上,采用不同的界面中断时间生长了多组AlGaAs/GaAs多量子阱样品(MQWs),通过室温发光光谱和时间分辨克尔旋转谱(TRKR)研究了界面生长中断对发光光谱半峰全宽(FWHM)和量子阱中电子自旋弛豫时间(自旋寿命)的影响,发现了自旋寿命随着界面生长中断时间的增加呈现先减小后增加的趋势,此变化趋势与荧光光谱半峰全宽表征的材料质量随中断时间的变化一致,适当的界面生长中断时间能有效的增加GaAs (111)衬底上AlGaAs/GaAs 多量子阱中电子自旋寿命。 相似文献
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Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate
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We report a type of thin film Al Ga In P red light emitting diode(RLED) on a metallic substrate by electroplating copper(Cu) to eliminate the absorption of Ga As grown substrate.The fabrication of the thin film RLED is presented in detail.Almost no degradations of epilayers properties are observed after this substrate transferred process.Photoluminescence and electroluminescence are measured to investigate the luminous characteristics.The thin film RLED shows a significant enhancement of light output power(LOP) by improving the injection efficiency and light extraction efficiency compared with the reference RLED on the Ga As parent substrate.The LOPs are specifically enhanced by 73.5% and 142% at typical injections of 2 A/cm~2 and 35 A/cm~2 respectively from electroluminescence.Moreover,reduced forward voltages,stable peak wavelengths and full widths at half maximum are obtained with the injected current increasing.These characteristic improvements are due to the Cu substrate with great current spreading and the back reflection by bottom electrodes.The substrate transferred technology based on electroplating provides an optional way to prepare high-performance optoelectronic devices,especially for thin film types. 相似文献
10.
水热条件下,合成了2个三维配位聚合物{[Zn4(L)2(o-bix)2]·2H2O}n(1),{[Co4(L)2(o-bix)2]·2H2O}n(2)(H4L=5,5′-亚甲基二间苯二甲酸,o-bix=1,2-双(咪唑基-1-甲基)苯),并通过红外、热重和X-射线单晶衍射进行了表征。X-射线衍射结果表明这2个化合物具有相似的结构。在1个不对称单元中,化合物包含2个不同配位环境的金属离子,1个L4-配体,1个o-bix分子以及1个游离的溶剂水分子。中心金属离子分别采用畸变的四面体和四方锥构型,形成两类双核单元,然后通过全部脱质子的L4-形成3D孔洞结构,o-bix配体通过连接两类双核金属原子填充于孔洞之中,形成3D紧密堆积结构。对化合物的红外和热重性质进行了表征。 相似文献