基于叉指结构的平面分形电容研究

以基于叉指结构的平面分形电容为研究对象,电容由激光刻蚀法制得,在测得其S参数后,利用ADS仿真工具进行了一阶等效电路参数提取及分析.结果表明,随着共面叉指电极间距的相对减小,电极间的耦合增大,相应的寄生电感也增大;而分形设计可以在保证电极间距不变的情况下,改善电容的工作稳定性.最后制得的分形平面电容的电容值在1~7 pF之间,电容稳定工作频率可达2.5 GHz以上,显示了较好的可调性和稳定性.     

两种新型大功率LED封装电极层的比较

为了提高半导体发光二极管封装的可靠性与焊接性能,避开传统的电极层陶瓷/金属的机械性能匹配问题,设计了两种电极层的结构:一种是多层膜系结构,另一种是氧化铟锡(ITO)薄膜.研究发现:多层膜系结构的电阻率为3×10-6 Ω·cm,平均抗拉强度为4.22 MPa,膜层表面缺陷较少, 致密性好,焊接性能好;ITO薄膜在紫外辐照条件下制备样品的电阻率、表面形貌和生长取向明显优于未经紫外辐照的样品,在线紫外辐照下最低方阻为5 Ω,电阻率为2.5×10-4 Ω·cm,平均抗拉强度为5.3 MPa ,表面缺陷少,致密度好,趋于[222]晶面的择优取向.多层膜系结构的电阻率明显优于ITO薄膜,但平均抗拉强度不如ITO薄膜.     

Modelling and Optimization for Deposition of SiOxNy Films by Radio-Frequency Reactive Sputtering

SiOxNy films are deposited by reactive sputtering from a Si target in Ar/O2/N2 atmospheres. In order to achieve the control of film composition and to keep a high deposition rate at the same time, a new sputtering model based on Berg＇s work is provided for the condition of double reactive gases. Analysis based on this model shows that the deposition process can easily enter the target-poisoning mode when the preset gas flow （N2 in this work） is too high, and the film composition will change from nitrogen-rich to SiO2-like with the increase of oxygen supply while keeping the N2 supply constant. The modelling results are confirmed in the deposition process of SiOxNy. Target self-bias voltages during sputtering are measured to characterize the different sputtering modes. FTIR-spectra and dielectric measurements are used to testify the model prediction of composition. Finally, an optimized sputtering condition is selected with the O2/N2 flow ratio varying from 0 to I and N2 supply fixed at I sccm. Average deposition rate of 17nm/min is obtained under this selected condition, which has suggested the model validity and potential for industry applications.     

大功率LED的散热封装

如何提高大功率LED的散热性能,是LED器件封装及其应用的关键技术.提出了一种LED薄膜集成封装结构,利用磁控溅射技术制备了实验样品,依据动态电学法,采用金相显微镜和扫描电镜对样品的热阻和膜层性能进行了测试,通过对传热模型的仿真以及实验,分析了样品的散热性能.与现有的PCB封装结构相比,薄膜封装结构的散热性能远优于PCB结构,而且薄膜封装结构的工艺简单、成本低廉,适合于大规模的工业化生产,具有良好的应用前景.     

基于氮氧化物的高k栅介质研究现状

氮氧化物在MOS器件高k栅介质研究中得到了广泛的重视。本文从材料、工艺、性能等角度综述了目前氮氧化物的研究进展,对氮化改性应用于高k栅介质的利弊作了重点探讨。