不同物质对黄芪根腐病致病菌的抑制作用

采用生物测定的方法,选择苦参碱、槐啶碱、槐果碱、对羟基苯甲酸和阿魏酸5种物质,研究各物质水和丙酮溶液以及不同物质丙酮混合溶液对黄芪根腐病2种主要致病菌菌丝生长和孢子萌发的抑制活性和最低抑菌质量浓度.结果表明:不同物质对2种致病菌菌丝生长和孢子萌发的影响不同,同种物质丙酮溶液的抑菌效果明显好于水溶液的抑菌效果.3种生物碱对2种致病菌菌丝生长的抑制作用比较显著,其中槐啶碱丙酮溶液的抑菌活性最强,在质量浓度为1.00 g/L时的相对抑制率分别为43.63%,27.10%,最低抑菌质量浓度均为0.062 5 g/L.2种酚酸类物质对2种致病菌孢子萌发的抑制作用明显强于对菌丝生长的抑制作用.不同物质丙酮混合溶液对2种致病菌菌丝生长和孢子萌发的抑制活性与单个物质丙酮溶液无明显差异,抑制效果最好的槐啶碱和苦参碱混合液对2种致病菌抑制的EC50为31.62,10.00 g/L,最低抑菌质量浓度均为0.062 5 g/L.不同物质的水和丙酮溶液对2种致病菌活性的抑制作用存在明显的浓度效应,抑制作用随溶液浓度降低而减弱.     

物理学奖：蓝光LED成就全新高效光源

10月7日，诺贝尔物理学奖评审委员会在瑞典首都斯德哥尔摩宣布，3名日本出生的科学家因发明高亮度蓝光发光二极管（LED）而获得2014年度诺贝尔物理学奖。3名获奖者分别为85岁的日本名城大学教授赤崎勇、54岁的名古屋大学教授天野浩和60岁的美国加利福尼亚大学圣塔芭芭拉分校教授中村修二。     

高质量氮化镓材料的光致发光研究

利用氨气源分子束外延（GSMBE）技术,在改型Ⅳ型分子束外延设备上生长高质量GaN单晶外延材料,并对样品进行了光致发光测量。分析室温和低温光致发光谱,系统地研究GaN的发光峰及其起源,并对常见的黄色发光带现象及其微结构起因进行探讨。     

Effect of Stress in GaN/AIInGaN Grown on GaN Templates with Different Stress States

We clarify the effect of the stress in GaN templates on the subsequent AIlnGaN deposition by simply growing 150nm AIInGaN on a 30μm GaN template （sample 1） prepared by hydride vapor phase epitaxy and a 2.3μm thin control GaN template （sample 2） prepared by metalorganic chemical vapor deposition. X-ray diffraction and secondary iron mass spectroscopy measurements reveal the stress states （tensile stress and full relaxed for samples 1 and 2, respectively） and compositions （Al0.169In0.01 Ga0.821N, Al0.171In0.006 Ga0.823N for samples 1 and 2, respectively） of AlInGaN. By carefully eliminating other possible factor, as template surface roughness, it is concluded that different stress states of AlInGaN should stem from different stress states of GaN templates.     

Survey of plasmonic gaps tuned at sub-nanometer scale in self-assembled arrays

Frontiers of Physics - Recent progress in the observation of surface-enhanced Raman scattering (SERS) is reviewed to examine the possibility of finding a novel route for the effective...     

中国半导体照明发展综述

半导体照明是21世纪初兴起的产业,也是我国第三代半导体材料成功产业化的第一个突破口,技术发展日新月异,是国际高科技领域竞争的焦点之一。目前,我国半导体照明产业已经形成了完整的产业链,功率白光LED、硅基LED和全光谱LED等核心技术同步国际,紫外LED、可见光通讯、农业光照和光医疗等创新应用走在世界前列。介绍了我国在半导体照明方面的研究进展,回顾了相关产业的发展情况,并对未来进行了展望。     

Localized deep levels in AlxGa1-xN epitaxial films with various Al compositions

By using high-temperature deep-level transient spectroscopy(HT-DLTS) and other electrical measurement techniques,localized deep levels in n-type AlxGa1-xN epitaxial films with various Al compositions(x = 0, 0.14, 0.24, 0.33, and 0.43)have been investigated. It is found that there are three distinct deep levels in AlxGa1-xN films, whose level position with respect to the conduction band increases as Al composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in AlxGa1-xN films.     

具有渐变量子垒的氮极性AlGaN基LED实现载流子调控和性能增强

为了获得高效率的AlGaN基深紫外发光二极管,提出了具有渐变量子垒的氮极性结构来调控载流子的传输.通过氮极性结构在p型电子阻挡层中形成的反向极化诱导势垒,改善空穴注入和电子泄漏问题.另外研究了不同的渐变方向和渐变程度对器件性能的影响.模拟结果显示,在12nm的AlGaN量子垒上沿着(000-1)方向从Al组分0.65线性渐变到0.6,可以有效平衡量子垒的势垒高度和斜率,从而极大的增强空穴注入,光输出功率相较于传统结构提高了53.6%.该设计为电子泄漏和空穴注入问题提供了直接而有效的解决方案,在实现更高效率的深紫外发光二极管方面显示出广阔的前景.     

Effect of Nanorod Diameters on Optical Properties of GaN-Based Dual-Color Nanorod Arrays

Dual-color(blue and green) InGaN/GaN nanorod light-emitting diodes(LEDs) with three different nanorod diameters are fabricated. Enhancement of luminescence intensity per area is observed in blue and green wells,to varying degrees. When the diameter is 40 nm, it sharply decreases, which could be explained by the sidewall nonradiative recombination. Time-resolved photoluminescence is conducted to study the carrier lifetime. High recombination rate is observed in nanorod arrays, and is an order of magnitude less than that of the planar LED.When the diameter is 40 nm, the nonradiative lifetime decreases, and this explains the decrease of intensity. The3 D-FDTD simulations show the enhancement of light extraction out of geometry structure by calculating the transmittance of the nanorod arrays.     

载流子复合机制对InGaN多量子阱蓝光LED调制带宽的影响

通过设计InGaN多量子阱LED有源区的不同结构,研究了载流子复合机制对LED调制速度的影响。结果显示,由于窄量子阱LED的载流子空间波函数重叠几率更高,且电子泄露效应更显著,所以复合速率更快,调制带宽更高。In组分为1%的InGaN量子垒LED可提高辐射复合的权重,使得调制带宽高于GaN量子垒LED;In组分为5%时,电子泄露和俄歇复合占据主导地位,且由于这两种复合机制复合速率很快,所以调制带宽显著提高。