排序方式: 共有18条查询结果,搜索用时 0 毫秒
1.
2.
3.
4.
5.
6.
Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition 下载免费PDF全文
We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiNx interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm2/(V·s) and 460 Ω/口 respectively. Owing to the significant effect of the SiNx interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA. 相似文献
7.
8.
9.
10.
铝土矿尾矿制备聚合氯化铝的浸出试验研究 总被引:1,自引:0,他引:1
以铝土矿尾矿焙烧浸出制备聚合氯化铝研究中,借助热重差示扫描仪和X射线衍射仪,确定铝土矿尾矿焙烧的温度范围。通过单因素条件实验,确定最佳焙烧条件为:焙烧温度750℃,焙烧时间1 h;最佳盐酸浸出的条件为:盐酸浓度质量百分浓度为20%,搅拌温度为100℃,搅拌浸出时间为2.5 h。采用铝土矿尾矿制备聚合氯化铝,可以减少选矿成本和提高选矿附加值,综合兼顾环境保护与经济利益。 相似文献