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利用从头计算的全势缀加平面波理论方法研究了3C-SiC的能带结构和基本的光学函数,得到了Si、C分波态密度和能带结构.介电函数的虚部由能带结构的计算直接得到.经带隙校正后,由Kramers—Kronic(K—K)色散关系计算了介电函数的实部.由得到的介电函数计算了折射率、消光系数和反射率.经比较,计算的结果与已有的实验数据基本相符. 相似文献
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利用同步辐射光电子能谱研究了低覆盖度Au在GaN(0001)表面的初始生长模式,肖特基势垒高 度以及界面的电子结构.结果表明,Au沉积初始阶段有界面的化学反应,随后呈三维岛状生长 .由光电子能谱实验确定的肖特基势垒高度为14 eV. 通过对界面价带谱和Au 4f芯能级谱 的分析,确定了界面化学反应的存在.利用线性缀加平面波方法计算了GaN(0001)和Au的价带 态密度并分析了化学反应产生的机理,认为在初始阶段界面形成了Au_Ga合金.
关键词:
同步辐射
光电子能谱
Au/GaN欧姆接触
态密度 相似文献
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利用同步辐射光电子能谱,研究了室温下在GaAs(100)表面上淀积的Mn的超薄膜的电子结构.实验发现,在θ<2ML的覆盖度下,Mn3d电子的能量态密度分布与体金属α-Mn差别很大当θ>2ML之后,便逐步接近α-Mn的体电子结构.这一结果可由Mn3d电子的自旋向上带和自旋向下带的交换分裂很好地解释.由此推断,当覆盖度θ<2ML时,在GaAs(100)表面上淀积的Mn的超薄膜具有磁有序结构
关键词: 相似文献
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通过溶胶-凝胶法合成了一系列Mn掺杂K-Co-Mo催化剂,并利用X射线衍射、N2吸脱附、NH3程序升温脱附、原位漫反射红外光谱以及X射线吸收谱等技术对催化剂的结构进行了表征.活性测试结果显示Mn掺杂催化剂比未掺杂催化剂表现更高的合成低碳醇的催化活性,尤其是C2+醇的选择性得到了明显的提高.醇产物分布偏离了ASF分布规律,甲醇的含量显著减少,乙醇成为主要醇产物.表征结果表明Mn助剂的加入增强了Co和Mo之间的相互作用,促进了醇生成活性中心Co-Mo-O物种的生成.显著减少了催化剂强酸性位的数量,促进了弱酸性位的产生,有利于醇产物的生成.助剂的加入有利于催化剂对CO的线性和桥式吸附,促进了醇产物的生成和碳链的增长,提高了催化剂对C2+醇的选择性. 相似文献
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A NEW METHOD TO ENHANCE THE MAGNETISM OF Fe OVERLAYER ON GaAs(100): SULFUR PASSIVATION USING CH3CSNH2 下载免费PDF全文
Ferromagnetic resonance (FMR) has been used to investigat the magnetism of Fe overlayer on S-passivated GaAs(lO0) pretreated by CH3CSNH2. Comparing with the magnetism of Fe overlayer on clean GaAs(100), we find that sulfur passivation can prevent Aa diffusion into Fe overlayer and weaken the interaction of As and Fe. It results in enhancing the magnetism of Fe overlayer on GaAs(100). We also investigate the effects of the pre-annealing of S- pasaivated GaAs(100) substrate on the magnetism of Fe overlayers. The results show that the maximum effective magnetization can be obtained at annealing temperature of 400℃. According to the experimental results of synchrotron radiation photoemission, it can be explained by the change of chemical composition and surface structure of the passivation layer on GaAs(100) surface after the annealing. 相似文献
6.
A NEW METHOD TO ENHANCE THE MAGNETISM OF Fe OVERLAYER ON GaAs(100): SULFUR PASSIVATION USING CH3CSNH2 下载免费PDF全文
Ferromagnetic resonance (FMR) has been used to investigat the magnetism of Fe overlayer on S-passivated GaAs(lO0) pretreated by CH3CSNH2. Comparing with the magnetism of Fe overlayer on clean GaAs(100), we find that sulfur passivation can prevent Aa diffusion into Fe overlayer and weaken the interaction of As and Fe. It results in enhancing the magnetism of Fe overlayer on GaAs(100). We also investigate the effects of the pre-annealing of S- pasaivated GaAs(100) substrate on the magnetism of Fe overlayers. The results show that the maximum effective magnetization can be obtained at annealing temperature of 400℃. According to the experimental results of synchrotron radiation photoemission, it can be explained by the change of chemical composition and surface structure of the passivation layer on GaAs(100) surface after the annealing. 相似文献
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STUDY OF IRON OVERLAYER ON SULPHUR PASSIVATED GaAs(100) BY SYNCHROTRON RADIATION PHOTOEMISSION 下载免费PDF全文
We have studied the interface electronic structures and the chemical reaction of the Fe overlayer deposited on S-passivated GaAs(100). The chemical bond and electronic structure are different from Fe/GaAs, and the reaction between As and Fe is weakened by S atoms. This is beneficial to the magnetism in the interface. In the first stage of deposition, Fe clusters is form near S atoms due to the large electronegativity of S. The S atoms remain at the interface with Fe coverage. Magnetic ordering feature is found at a coverage higher than 0.6 nm. According to the large exchange splitting in valence band spectra, we suggest that Fe phase transition from bcc to fcc occurs with increasing coverage. 相似文献
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提出一个比较特殊的半开环服装剪裁数控系统.系统采用一片高性能的16位单片机8097BH作主机,以两片8位单片机作副机,构成模块式的硬件系统.软件系统由两大部分组成,即前台程序和后台程序.前台程序以中断方式完成数控系统的各种实时控制任务;后台程序负责原始数据输入,数据处理,协调各子系统等.由于软、硬件系统皆用模块式构成,所以系统维护简单、扩展方便、有很好的性能价格比优势. 相似文献