一个时滞经济增长模型的动态分析

提出了一个基于Solow模型的考虑时滞作用的多种资本投入的经济增长模型，该模型的生产函数是满足“新古典”条件的一次齐次函数，在所的条件下，证明了系统有唯一的正平衡解；使用单调互动力系统的已有结果推得系统的正解是全局稳定的，关于参数的静态分析也与经典的增长模型完全一致，结果表明，在考虑时滞与多资本的因素下，经济系统仍能达到稳定状态，这在一定意义上揭示了Solow模型的深刻内涵。     

Optimization and Finite Element Analysis of the Temperature Field in a Nitride MOCVD Reactor by Induction Heating

A susceptor structure with a ring channel for a vertical metalorganic chemical vapor deposition reactor by induction heating is proposed. Thus the directions of heat conduction are changed by the channel, and the channel makes the heat in the susceptor redistribute. The pattern of heat transfer in this susceptor is also analyzed. In addition, the location and size of the channel in the susceptor are optimized using the finite element method. A comparison between the optimized and the conventional susceptor shows that the optimized susceptor not only enhances the heating efficiency but also the uniformity of temperature distribution in the wafer, which contributes to improving the quality of the film growth.     

基于微助教平台的微积分大班教学实践

随着互联网技术和智能终端的广泛普及,出现了许多协助教师完成教学过程,尤其是改善课堂教学模式的一些信息化应用平台.微助教就是2016年来发展迅速的平台之一.在微积分的大班课堂上应用微助教教学平台的许多新的功能:签到,测验,问卷,讨论等,促进了微积分大班教学模式的改革,逐步实现了翻转课堂和SPOC混合教学模式的教学.微助教的使用,以及新的教学模式改进了微积分传统课堂的一些弊端,极大提高了教师微积分教学的质量,激励和促进了学生向自主和个性化学习的转变.     

太原盆地QK1钻孔60ka.B.P以来气候环境演化的沉积记录

通过对太原盆地QK1钻孔60 ka.B.P.以来的沉积物进行粒度、磁化率分析,探讨了太原盆地60 ka.B.P.以来的气候环境演化过程。太原盆地60 ka.B.P.以来主要经历了以下演化阶段:59.6～40 ka.B.P.属滨湖相沉积;40～31.5 ka.B.P.属以河流相漫滩沉积;31.5～14.58 ka.B.P.属河流相边滩沉积;14.58～12.5 ka.B.P.河流相漫滩沉积;12.5～9 ka.B.P.河漫湖泊沉积;9 ka.B.P.至今属河流相边滩沉积。60 ka.B.P.以来太原盆地的气候由温暖偏湿转为温暖湿润,在末次冰期表现为寒冷干燥,进入全新世大暖期以后,气候具有全球性特征的同时也兼具区域性特点。各指标分析表明太原盆地的气候环境演化主要受全球性气候变化及区域气候的影响,由于盆地沉降中心与边缘沉积速率的差异,在一定程度上受到地区构造活动的影响。     

A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric

Accumulation-type GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al₂O₃ gate dielectrics are fabricated. The device, with atomic-layer-deposited Al₂O₃ as the gate dielectric, presents a drain current of 260 mA/mm and a broad maximum transconductance of 34 mS/mm, which are better than those reported previously with Al₂O₃ as the gate dielectric. Furthermore, the device shows negligible current collapse in a wide range of bias voltages, owing to the effective passivation of the GaN surface by the Al₂O₃ film. The gate drain breakdown voltage is found to be about 59.5 V, and in addition the channel mobility of the n-GaN layer is about 380 cm²/Vs, which is consistent with the Hall result, and it is not degraded by atomic-layer-deposition Al₂O₃ growth and device fabrication.     

关于Lotka-Volterra型积分微分方程解的渐近状态

本文考虑形如(t)=diag(x(t)){diag(b)x(t)+(integral from n=-r to 0([dμ(s)]x(t+s)}的Lotka-Volterra型积分微分方程,给出了这类方程的所有正解收敛于零或者发散到无穷的充分条件.     

Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistor by gate-drain conductance dispersion study

This paper studies the drain current collapse of AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs) with NbAlO dielectric by applying dual-pulsed stress to the gate and drain of the device.For NbAlO MIS-HEMT,smaller current collapse is found,especially when the gate static voltage is 8 V.Through a thorough study of the gate-drain conductance dispersion,it is found that the growth of NbAlO can reduce the trap density of the AlGaN surface.Therefore,fewer traps can be filled by gate electrons,and hence the depletion effect in the channel is suppressed effectively.It is proved that the NbAlO gate dielectric can not only decrease gate leakage current but also passivate the AlGaN surface effectively,and weaken the current collapse effect accordingly.     

Neutron irradiation effects on AlGaN/GaN high electron mobility transistors

AlGaN/GaN high electron mobility transistors (HEMTs) were exposed to 1 MeV neutron irradiation at a neutron fluence of 1 × 10¹⁵ cm^-2. The dc characteristics of the devices, such as the drain saturation current and the maximum transconductance, decreased after neutron irradiation. The gate leakage currents increased obviously after neutron irradiation. However, the rf characteristics, such as the cut-off frequency and the maximum frequency, were hardly affected by neutron irradiation. The AlGaN/GaN heterojunctions have been employed for the better understanding of the degradation mechanism. It is shown in the Hall measurements and capacitance-voltage tests that the mobility and concentration of two-dimensional electron gas (2DEG) decreased after neutron irradiation. There was no evidence of the full-width at half-maximum of X-ray diffraction (XRD) rocking curve changing after irradiation, so the dislocation was not influenced by neutron irradiation. It is concluded that the point defects induced in AlGaN and GaN by neutron irradiation are the dominant mechanisms responsible for performance degradations of AlGaN/GaN HEMT devices.     

Fabrication and Characteristics of AIInN/A1N/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al2O3 Gate Dielectric

Al0.85In0.15N//AlN/GaN metal-oxide-semiconductor high electron mobility transistors （MOS-HEMTs） employing a 3-nm ultra-thin atomic-layer deposited （ALD） Al2O3 gate dielectric layer are reported. Devices with 0.6μm gate lengths exhibit an improved maximum drain current density of 1227mA/mm at a gate bias of 3 V, a peak transeonductance of 328mS/mm, a cutoff frequency fr of 16 GHz, a maximum frequency of oscillation fmax of 45 GHz, as well as significant gate leakage suppression in both reverse and forward directions, compared with the conventionM Al0.85In0.15N/AlN/GaN HEMT. Negligible C - V hysteresis, together with a smaller pinch-off voltage shift, is observed, demonstrating few bulk traps in the dielectric and high quality of the Al2O3/AIInN interface, it is most notable that not only the transconductance profile of the MOS-HEMT is almost the same as that of the conventional HEMT with a negative shift, but also the peak transconduetance of the MOS-HEMT is increased slightly. It is an exeitin~ inwrovement in the transconductance performance.