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Introduction Becausethepropertiescanbeadjustedbythestraindistributionandthepossibleintegrationwithstandardsilicontechnology,silicon-germanium(SiGe)heterosystemshavebecomemoreimportantinrecentyears.AnumberofinterestingelectronicandopticaldeviceshavebeendevelopedusingSiGe.Thesedevicesincludeheterostructurefieldeffecttransistors(HFET)[1,2],heterojunctionbipolartransistors[35],andinfrareddetectors[6,7].Futureprospectshaveencouragedthesearchforimproveddepositiontechniquesforsiliconandsilicon… 相似文献
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