Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

(Mn1-xCox)65Ge35(x=0.2～0.5)合金的磁热效应

在氩气的保护下用熔炼法制备了(Mn1-xCox)65Ge35系列合金,通过X射线衍射和振动样品磁强计研究了样品的结构和磁熵变.结果表明,(Mn1-xCox)65Ge35系列合金在Co含量x=0.2时,样品为正交结构,磁矩反铁磁排列; 当Co含量0.2≤x≤0.5时,样品为六角结构,磁矩铁磁排列.随着Co含量的增加,合金的居里温度在250～302K范围内变化.在低磁场(0-1.5T)下,(Mn1-xCox)65Ge35系列合金的最大等温磁熵变为1.7J·kg-1·K-1.     

疫苗冷藏温度自动监测系统的研究

利用微机芯片８０３１为主体部件设计测温系统，输入信号采用三线式桥路输入方法。实现了温度自动监测和记录打印。     

Quantum—Confined Stark Effect of Vertically Stacked Self—Assembled Quantum Discs

We study the electronic energy levels and probability distribution of vertically stacked self-assembled InAs quantum discs system in the presence of a vertically applied electric field. This field is found to increase the splitting between the symmetric and antisymmetric levels for the same angular momentum. The field along the direction from one disc to another affects the electronic energy levels similarly as that in the opposite direction because the two discs are identical. It is obvious from our calculation that the probability of finding an electron in one disc becomes larger when the field points from this disc to the other one.     

Optical spectra and Exciton State in Vertically Stacked Self—Assembled Quantum Discs

We study the oscillator strengths of the optical transitions of the vertically stacked self-assembled InAs quantum discs.The oscillator strengths change evidently when the two quantum discs are far apart from each other.A vertically applied electric field affects the oscillator strengths severely.while the oscillator strengths change slowly as the radius of one disc increases.We also studied the excitonic energy of the system.including the Coulomb interaction.The excitonic energy increases with the increasing radius of one disc.but decreases as a vertically applied electric field increases.     

Nd_3Fe_(29-x)Ti_x(x=1.3～2.0)化合物的成相范围及其温度特性(英文)

用热磁测量和X -光衍射谱研究了Nd3Fe2 9-xTix 化合物的成相范围及其温度特性 .研究发现 ,x =1.3～ 2 .0范围内的所有化合物都成单相 ,其晶体结构具有A2 /m空间群的单斜结构 .随着Ti含量的增加 ,晶格参数a ,b ,c几乎不变 ,而晶胞体积V略微增加 .每个样品都出现了自旋重取向现象 ,但自旋重取向温度Tsr和居里温度TC 几乎不随Ti的含量而改变 .     

高技术产业开发区的发展模式及对策

高技术产业开发区是高新技术产业的生长基地和开发窗口.一个成功的开发区,应包括大学或研究院所、科技创业服务中心和企业.本文采用定性和定量相结合的方法,进行高技术产业开发区的模式研究,探讨其模式识别、模式选择、模式评价以及有关对策.     

Single Crystal Si Layers on Glass Fabricated by Hydrophilic Fusion Bonding and Smart-Cut Technology

A single crystal Si thin film on a glass substrate has been obtained successfully by hydrophilic fusion bonding and the smart-cut technology. Tensile strength testing shows that the bonded interface has strong adhesion and the bonding strength is about 8.7MPa. Crystallinity and microstructure of the samples have been characterized by transmission electron microscopy (TEM). Electrical properties have also been investigated by Hall measurements and four-point probe. The mobility of the transferred Si layer on glass is about 122cm^2//V.s. The results show that the single-crystal silicon layer transferred onto glass by direct bonding keeps good quality for the applications of integrated circuits, transducers, and fiat panel display.     

Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device

In order to improve nano-scale phase change memory performance, a super-clean interface should be obtained after chemical mechanical polishing （CMP） of Ge2Sb2Te5 phase change films. We use reactive ion etching （RIE） as the cleaning method. The cleaning effect is analysed by scanning electron microscopy and an energy dispersive spectrometer. The results show that particle residue on the surface has been removed. Meanwhile, Ge2Sb2Te5 material stoichiometric content ratios are unchanged. After the top electrode is deposited, currentvoltage characteristics test demonstrates that the set threshold voltage is reduced from 13 V to 2.7V and the threshold current from 0.1 mA to 0.025 mA. Furthermore, we analyse the RIE cleaning principle and compare it with the ultrasonic method.