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对不同的本底真空条件下,采用甚高频等离子体增强化学气相沉积技术沉积的氢化微晶硅(μc_Si∶H)薄膜中的氧污染问题进行了比较研究.对不同氧污染条件下制备的薄膜样品的x射线光电子能谱与傅里叶变换红外吸收光谱测量结果表明:μc_Si∶H薄膜中,氧以Si—O,O—O和O—H三种不同的键合模式存在,不同的键合模式源自不同的物理机理.μc_Si∶H薄膜的Raman光谱、电导率与激活能的测量结果进一步显示:沉积过程中氧污染程度的不同,对μc_Si∶H薄膜的结构特性与电学特性产生显著影响;而不同氧污染对μc_Si∶H薄膜电学特性的影响不同于氢化非晶硅(a_Si:H)薄膜.
关键词:
氢化微晶硅薄膜
甚高频等离子体增强化学气相沉积
氧污染 相似文献
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杨恢东 《五邑大学学报(自然科学版)》1997,11(1):81-84
谈分光计的调整方法杨恢东(五邑大学数学物理系江门市529020)在光学测量中,很多物理量诸如折射率,光栅常数,光波的波长,光的色散率等的测量都可以通过相应的角度的测量来实现。因此,分光计作为一种精确测定光线的偏转角的光学议器,在整个光学测量中占据非常... 相似文献
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本文介绍了由间接耦合光电探测器产生的光致负阻现象、并以实验为依据,基于一些合理的简化和假设,提出了一种物理模型。由此建立的几个基本的物理方程及进一步的理论推导的结果表明:该物理模型可以较好地对耦合区电流的负阻特性进行定性地解释。 相似文献
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利用射频(RF)磁控共溅射技术,以光学石英玻璃为基片,在不同基片温度下制备了系列GaAs/SiO2半导体纳米颗粒镶嵌薄膜样品。采用岛津光谱仪,对薄膜在200至2000nm波段范围内的透射光谱进行了测量。结果表明,与GaAs块体材料相比,薄膜样品吸收边发生明显的蓝移;且随着基片温度的降低,蓝移量增大。而当基片温度达到300℃时,光谱中出现了明显的吸收峰。量子限域效应是导致这种结果的主要原因。 相似文献
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应用可调谐相干VUV辐射源和热电离二级管得到了CaⅠ的双激发态3d6p和3d4f的高分辨光谱,测出了相应谱线的波长,并测得变窄了的3d6p^1P1的谱线宽度为1.5A,明显地观察到3d6p和3d4f三重态中P态与D态线型对称性反转的现象,并对上述线宽变窄和线型时称性反转现象的机理作了探讨。 相似文献
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The role of hydrogen in hydrogenated microcrystalline silicon film and in deposition process with VHF-PECVD technique 下载免费PDF全文
The role of hydrogen in hydrogenated microcrystalline silicon ($\mu $c-Si:H)
thin films in deposition processes with very high frequency
plasma-enhanced chemical vapour deposition (VHF-PECVD) technique have been
investigated in this paper. With \textit{in situ} optical emission spectroscopy (OES)
diagnosis during the fabrication of $\mu $c-Si:H thin films under different
plasma excitation frequency $\nu _{\rm e }$ (60MHz--90MHz), the
characteristic peak intensities ($I_{{\rm SiH}^*}$, $I_{{\rm H}\alpha^*}$
and $I_{{\rm H}\beta ^*}$) in SiHVHF-PECVD技术 氢化微晶硅 光发射光谱 薄膜学 VHF-PECVD technique, hydrogenated microcrystalline silicon, role of hydrogen, optical emission spectroscopy Project supported by the Natural Science Foundation of Guangdong
Province, China (Grant No 05300378), the State Key Development Program for Basic Research
of China (Grant Nos G2000028202 and G2000028203) and the Program on Natural
Science of Jinan University, Guangzhou, China (Grant No 51204056). 2005-11-25 2005-11-252006-01-05 The role of hydrogen in hydrogenated microcrystalline silicon (μc-Si:H) thin films in deposition processes with very high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) technique have been investigated in this paper. With in situ optical emission spectroscopy (OES) diagnosis during the fabrication of μc-Si:H thin films under different plasma excitation frequency Ve (60MHz-90MHz), the characteristic peak intensities (IsiH*, IHα* and IHβ* ) in SiH4+H2 plasma and the ratio of (IHα* + IHβ* ) to IsiH* were measured; all the characteristic peak intensities and the ratio (IHα* + IHβ* )/IsiH* are increased with plasma excitation frequency. It is identified that high plasma excitation frequency is favourable to promote the decomposition of SiH4+H2 to produce atomic hydrogen and SiHx radicals. The influences of atomic hydrogen on structural properties and that of SiHx radicals on deposition rate of μc-Si:H thin films have been studied through Raman spectra and thickness measurements, respectively. It can be concluded that both the crystalline volume fraction and deposition rate are enhanced with the increase of plasma excitation frequency, which is in good accord with the OES results. By means of FTIR measurements, hydrogen contents of μc-Si:H thin films deposited at different plasma excitation frequency have been evaluated from the integrated intensity of wagging mode near 640 cm^-1. The hydrogen contents vary from 4% to 5%, which are much lower than those of μc-Si:H films deposited with RF-PECVD technique. This implies that μc-Si:H thin films deposited with VHF-PECVD technique usually have good stability under light-soaking. 相似文献
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杨恢东 《五邑大学学报(自然科学版)》1999,13(3):56-59
深入地讨论了正弦激励下的R-L一阶电路的暂态过程,分析了该电路在接通正弦交流电时,直接进入稳态响应的条件以及该电路产生过电压、过电流现象的原因。 相似文献
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采用光发射谱(OES)测量技术,对不同制备条件下的甚高频(VHF)等离子体辉光进行了在线监 测.实验表明,VHF等离子体中特征发光峰(Si,SiH,Hα,H*β 等)的强度较常规的射 频(RF)等离子体明显增强,并且在制备μc-Si:H的工艺条件下(H稀释度R(H2/S iH4)=23 ),随激发频率的增加而增大,这些发光峰的变化趋势与材料沉积速率的变化规律较相似.Si H峰等的强度随气压的变化则因硅烷H稀释度及功率的不同而异:高H稀释(R=23)时,SiH峰强 度在低辉光功率下随反应气压的增大单调下降,在高辉光功率下随气压的变化呈现类高斯规 律;低H稀释(R=5.7)时, SiH峰随气压的变化基本上是单调下降的,下降速率也与功率有 关,这些结果表明,VHF-PECVD制备μc-Si:H和a-Si:H的反应动力学过程存在较大差异.此 外,随着激发功率的增大,Si,SiH峰都先迅速增大然后趋于饱和,并且随着H稀释率的增大 ,将更快呈现饱和现象.通过对OES结果的分析与讨论可知,VHF-PECVD技术沉积硅基薄膜可 以有效提高沉积速率,而且,硅基薄膜的沉积速率的进一步提高需要综合考虑H稀释度、气 压和功率等的匹配与优化.
关键词:
甚高频等离子体化学气相沉积
氢化硅薄膜
光发射谱 相似文献