Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction

A novel junction terminal extension structure is proposed for vertical diamond Schottky barrier diodes (SBDs) by using an n-Ga₂O₃/p-diamond heterojunction. The depletion region of the heterojunction suppresses part of the forward current conduction path, which slightly increases the on-resistance. On the other hand, the reverse breakdown voltage is enhanced obviously because of attenuated electric field crowding. By optimizing the doping concentration, length, and depth of n-Ga₂O₃, the trade-off between on-resistance and breakdown voltage with a high Baliga figure of merit (FOM) value is realized through Silvaco technology computer-aided design simulation. In addition, the effect of the work functions of the Schottky electrodes is evaluated. The results are beneficial to realizing a high-performance vertical diamond SBD.     

含铜难处理金矿选择性浸出试验研究

针对某含铜难处理金矿进行了碘化法和石硫合剂(lime sulfur synthetic solution,LSSS)法的选择性浸金的研究。结果表明,在碘单质质量浓度为8g/L,浸出时间为2h的条件下,碘化法浸出金的浸出率为88.1%,而且铜的浸出率不足1%。在石硫合剂质量分数为25%,浸出时间为6h的条件下,LSSS法浸出金的浸出率仅为73.5%。对比碘化浸出和石硫合剂浸出效果可知,碘化法对该含铜难处理金矿不仅浸出速度快、浸出率高而且铜几乎不被浸出,具有很强的选择性浸金作用。