用于垂直腔面发射激光器的超薄光子晶体反射镜

提出了一种光子晶体反射镜作为垂直腔面发射激光器的P面反射镜,并分析了其反射特性。为了设计在850 nm波段具有高反射率和宽带宽的光子晶体反射镜,采用三维时域有限差分法对光子晶体反射镜的结构参数进行计算优化。结果表明,当二维光子晶体结构的气孔半径为84 nm,周期为212 nm,高度为90 nm时,对应TE光学模式的高反射率（R≥99.5%）带宽为106 nm,与中心波长之比为12.5%;同时对于TM光学模式的反射率低于80%,具有较宽的偏振选择性。并且光子晶体反射镜薄,串联电阻小,没有氧化物引入的电阻和应力问题。因此,提出的新型光子晶体反射镜可替代传统垂直腔面发射激光器的P型分布布拉格反射镜,提供高反射率和宽带宽,并提高器件的光电性能。     

Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots

The threading dislocations (TDs) in GaAs/Si epitaxial layers due to the lattice mismatch seriously degrade the performance of the lasers grown on silicon. The insertion of InAs quantum dots (QDs) acting as dislocation filters is a pretty good alternative to solving this problem. In this paper, a finite element method (FEM) is proposed to calculate the critical condition for InAs/GaAs QDs bending TDs into interfacial misfit dislocations (MDs). Making a comparison of elastic strain energy between the two isolated systems, a reasonable result is obtained. The effect of the cap layer thickness and the base width of QDs on TD bending are studied, and the results show that the bending area ratio of single QD (the bending area divided by the area of the QD base) is evidently affected by the two factors. Moreover, we present a method to evaluate the bending capability of single-layer QDs and multi-layer QDs. For the QD with 24-nm base width and 5-nm cap layer thickness, taking the QD density of 10¹¹ cm^-2 into account, the bending area ratio of single-layer QDs (the area of bending TD divided by the area of QD layer) is about 38.71%. With inserting five-layer InAs QDs, the TD density decreases by 91.35%. The results offer the guidelines for designing the QD dislocation filters and provide an important step towards realizing the photonic integration circuits on silicon.