SRAM的一种可测性设计

用ETCO算法对SRAM进行了内建自测试设计．首先说明了设计的原理，进而对电路中所用的各个单元电路进行了设计，主要包括地址计数器、数据计数器和BIST控制器等．设计出的电路可针对具体的故障模型设置相应的测试长度，从而获得预期的故障覆盖率．测试时不需存储正确响应，并可通过一个响应标志位表示检测的结果．可测性部分对电路硬件的开销较小，所设计的电路在工作站上已成功通过仿真，此电路可广泛应用于嵌入式SRAM，以降低电路的测试难度．     

Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires

Bandgap engineering of semiconductor nanomaterials is critical for their applications in nanoelectronics, optoelectronics, and photonics. Here we report, for the first time, the growth of single-crystalline quaternary alloyed Ga_(0.75)In_(0.25)As_(0.49)Sb_(0.51) nanowires via a chemical-vapor-deposition method. The synthesized nanowires have a uniform composition distribution along the growth direction, with a zinc-blende structure. In the photoluminescence investigation,these quaternary alloyed semiconductor nanowires show a strong band edge light emission at 1950 nm(0.636 e V). Photodetectors based on these alloy nanowires show a strong light response in the near-infrared region(980 nm) with the external quantum efficiency of 2.0 × 10~4% and the responsivity of 158 A/W. These novel near-infrared photodetectors may find promising applications in integrated infrared photodetection, information communication, and processing.     

Exciton luminescence and many-body effect of monolayer WS2 at room temperature

Monolayer transition metal dichalcogenides favor the formation of a variety of excitonic quasiparticles, and can serve as an ideal material for exploring room-temperature many-body effects in two-dimensional systems. Here, using mechanically exfoliated monolayer WS₂ and photoluminescence (PL) spectroscopy, exciton emission peaks are confirmed through temperature-dependent and electric-field-tuned PL spectroscopy. The dependence of exciton concentration on the excitation power density at room temperature is quantitatively analyzed. Exciton concentrations covering four orders of magnitude are divided into three stages. Within the low carrier concentration stage, the system is dominated by excitons, with a small fraction of trions and localized excitons. At the high carrier concentration stage, the localized exciton emission from defects coincides with the emission peak position of trions, resulting in broad spectral characteristics at room temperature.     

Band gap engineering of atomically thin two-dimensional semiconductors

Atomically thin two-dimensional(2D) layered materials have potential applications in nanoelectronics, nanophotonics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for their broad applications in high-performance integrated devices, such as broad-band photodetectors, multi-color light emitting diodes(LEDs), and high-efficiency photovoltaic devices. In this review, we will summarize the recent progress on the controlled growth of composition modulated atomically thin 2D semiconductor alloys with band gaps tuned in a wide range, as well as their induced applications in broadly tunable optoelectronic components. The band gap engineered 2D semiconductors could open up an exciting opportunity for probing their fundamental physical properties in 2D systems and may find diverse applications in functional electronic/optoelectronic devices.     

高频电缆的传感特性及应用研究

分析了高频信号在电缆中的传感特性,在信号传输方程的基础上,对信号的反射及部分反射状态作了分析,进而提出了应用于高速系统速度测量的一个新的应用方案,并通过实验验证了方案的可行性。     

High performance photodetectors based on high quality InP nanowires

In this paper,small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method.Benefitting from the high crystallinity and large specific surface area of InP nanowires,the simply constructed photodetector demonstrates a high responsivity of up to 1170 A·W ~(-1) and an external quantum efficiency of2.8 × 10~5% with a fast rise time of 110 ms and a fall time of 130 ms,even at low bias of 0.1 V.The effect of back-gate voltage on photoresponse of the device was systematically investigated,confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation.A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the photodetectors.These convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics.     

一种新型低压低功耗伪差分环形压控振荡器设计

基于交叉耦合技术提出了一种新型低压低功耗伪差分环形压控振荡器(VCO).电路整体包括新型伪差分环形压控振荡器、输出整形缓冲(buffer)电路两个部分.在VCO电路中采用了尾电流源控制的反相器为基本延时单元,实现了一种新型低压低功耗伪差分环形振荡器设计,并采用线性化技术改善调节线性度.利用输出buffer对VCO输出波形进行整形,消除了这种结构下输出摆幅受到尾电流源影响而不能达到轨到轨摆幅的限制.基于0.13μm标准CMOS工艺,利用cadence spectre进行仿真验证,前仿真结果表明在电源电压为1.2V时,该VCO相位噪声为-100.58dBc/Hz@1 MHz,功耗为0.92mW,在0.45~1V的电压范围内,频率调谐范围宽达0.303~1.63GHz,具有非常好的调节线性度,在电源电压为1V时仍然能正常工作.     

数学解题教学需要寻找根源

数学解题教学的高效和有效是教师教学最核心的教学内容.在新课程理念引入到教学之后,我们常常看到各种层出不穷的全新教学方式、方法,有很多教学模式围绕学生进行了设计和尝试,是非常值得我们学习和探索的,比如,以积极建构为主的数学新知类教学模式、以马登变式理论构建的变式教学复习模式、以APOS理论进行的知识探索类教学模式等,都有较大的借鉴意义.随着新课程理念的不断深入,在高三复习解题教学中,我们对新课程如何更好更妙地实施教学高效性和有效性,在认识方面并不足够.笔者常常出去观摩高三解