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就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究,并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结,其结电阻与面积的积 矢的绝对误差在10% 以内,隧穿磁电阻的绝对误差在7% 以内,样品的磁性隧道结性质具有较好的均匀性和一致性,可以满足研制磁随机存储器存储单元演示器件的基本要求.
关键词:
磁性隧道结
隧穿磁电阻
磁随机存储器
4英寸热氧化硅衬底 相似文献
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In recent years,low-dimensional materials have received extensive attention in the field of electronics and optoelectronics.Among them,photoelectric devices based on photoconductive effect in low-dimensional materials have a broad development space.In contrast to positive photoconductivity,negative photoconductivity(NPC)refers to a phenomenon that the conductivity decreases under illumination.It has novel application prospects in the field of optoelectronics,memory,and gas detection,etc.In this paper,we review reports about the NPC effect in low-dimensional materials and systematically summarize the mechanisms to form the NPC effect in existing low-dimensional materials. 相似文献
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利用液相共沉淀法,以BaCO_3和PbO为原料制备了BaPbO_3陶瓷粉末,讨论了原料、焙烧温度、升温速度、保温时间对粉末性能的影响,并用X射线衍射及SEM对粉末的结构和形貌进行了研究。实验结果表明:采用液相共沉淀法能明显降低BaPbO_3粉末的合成温度,其合成温度约为650℃左右;液相法制备的BaPbO_3粉末的纯度高、粒度细;适当地提高升温速度可提高BaPbO_3粉体的合成率和降低BaPbO_3粉体的合成温度。图6,参12。 相似文献
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Recent advances in two-dimensional layered and non-layered materials hybrid heterostructures
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With the development of Moore's law, the future trend of devices will inevitably be shrinking and integration to further achieve size reduction. The emergence of new two-dimensional non-layered materials (2DNLMs) not only enriches the 2D material family to meet future development, but also stimulates the global enthusiasm for basic research and application technologies in the 2D field. Van der Waals (vdW) heterostructures, in which two-dimensional layered materials (2DLMs) are physically stacked layer by layer, can also occur between 2DLMs and 2DNLMs hybrid heterostructures, providing an alternative platform for nanoelectronics and optoelectronic applications. Here, we outline the recent developments of 2DLMs/2DNLMs hybrid heterostructures, with particular emphasis on major advances in synthetic methods and applications. And the categories and crystal structures of 2DLMs and 2DNLMs are also shown. We highlight some promising applications of the heterostructures in electronics, optoelectronics, and catalysis. Finally, we provide conclusions and future prospects in the 2D materials field. 相似文献
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利用金属掩模法优化了制备磁性隧道结的实验和工艺条件,金属掩模的狭缝宽度为100 μm. 采用4 nm厚的Co75Fe25为铁磁电极和10或08 nm厚的铝氧化物 为势垒膜, 直接制备出了室温隧穿磁电阻(TMR)为30%—48%的磁性隧道结,其结构为Ta(5 nm)/Cu(25 nm)/Ni79Fe21(5 nm)/Ir22Mn78(10 nm)/ Co75Fe25 (4 nm)/Al(08 nm)-O/Co75Fe25(4 nm)/Ni79Fe 21(20 nm)/Ta(5 nm).同时,利用刻槽打孔法和去胶掀离法两种光刻技术并结合Ar离子束刻蚀及化学反应刻 蚀,制备出面积在4 μm×8 μm—20 μm×40 μm、具有室温高TMR和低电阻的高质量磁性 隧道结.300 ℃ 退火前后其室温TMR可分别达到22% 和50%.研究结果表明,采用光刻中的刻 槽打孔或去胶掀离工艺方法制备的小尺寸磁性隧道结,可用于研制磁动态随机存储器和磁读 出头及其他传感器件的磁敏单元.
关键词:
磁性隧道结
隧穿磁电阻
金属掩模法
光刻法 相似文献
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利用金属掩模法和Ir22Mn78合金反铁磁钉扎层,制备了四种钉扎型的Py/Al2O3/Py,Py/Al2O3/Co,Co/Al2O3/Py和Co/Al2O3/Co磁性隧道结,坡莫合金的成分为Py=Ni79Fe21.例如:利用狭缝宽度为100?μm的金属掩模,直接制备出室温隧穿磁电阻比值为17.2%的磁性隧道结Co/Al2O3/Co,其结电阻为76Ω,结电阻和结面积的积矢为76×104Ωμm2,自由层的偏转场为1114?A/m,并且在外加磁场0.1114A·m-1之间时室温磁电阻比值
关键词:
磁性隧道结
隧穿磁电阻
磁随机存储器
金属掩模 相似文献
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