结晶化学基础理论在现代X射线单晶结构分析中的一些应用

研究化学物质分子结构的方法很多,而衍射法是其中主要的方法之一,它包括X射线衍射、中子衍射和电子衍射等。由于X射线容易得到,而且成本较低,因此、X射线衍射法是分     

绝缘栅PMOS的SUPREM—SEDAN联机模拟研究

本文分析及研究了作者对绝缘栅ＰＭＯＳ场效应结构所进行的ＳＵＰＲＥＭ—ＳＥＤＡＮ联机模拟．重点在衬底电阻率（掺杂浓度）与ＭＯＳ结构阈值电压之间的定量关系上得到了与实验完全一致的结果．同时，定量地描述了栅氧层中电离电荷的分布及其行为．揭示了上述效应的机理．     

一个数学建模问题的简单解法

银行利率给出了一个简单计算方法 ,这种方法更符合中学生思维的习惯 .     

PINNING EFFECT OF LEAD LANTHANUM TITANATE THIN FILMS DEPOSITED ON DIFFERENT SUBSTRATES

Pinning effect of lead lanthanum titanate (PLT) ferroelectric thin films with excess PbO of 20 mol% has been studied for deposition on diffe rent substrates. Silicon, sapphire and quartz were used as substrates on which P t/Ti or LaNiO₃ thin films were deposited as bottom electrodes. Electron probe analysis results showed that there was still a certain amount of excess Pb in PLT films after annealing at 550 ℃ for 1 h, and the amount of it was dependent on the substrate used. The distribution of excess Pb in the films was investig ated by Auger electron spectroscopy depth profile. It was shown that the substrates and the bottom electrodes had significant effects on the content and distrib ution of excess Pb in PLT films. The excess Pb and its accumulation at the inter face between the film and bottom electrode may act as pinning centers and have a pinning effect on domains, which can be observed by abnormal P-E hysteresis loops and abnormal C-V curves. The excess Pb content in the films and the accumulation of Pb at the interface were high in PLT films deposited on Pt/Ti/S i, and considerable pinning effect was observed. As LaNiO₃ would absorb most part of the excess Pb in PLT films, the content of excess Pb in the films deposited on LaNiO₃/Si was very low and the pinning effect was hardly observed.     

金属富勒烯La＠C_（2n）的合成、提取及其ESR和MS表征

采用对掺入Ｌａ_２Ｏ_３的石墨棒原位活化并结合交换电极回放方法制备了产率较高的金属富勒烯，并用甲苯高温热提取的方法有效地提取出Ｌａ＠Ｃ_（２ｎ），其中Ｌａ＠Ｃ_（７４）为可溶性金属富勒烯增加了新成员．同时，首次采用解吸电子轰击质谱对提取物进行了表征，讨论了提取物的ＥＳＲ谱．     

有机磷化合物的质谱研究(Ⅵ)——磷酰二胺酯类化合物的电子轰击质谱和化学电离质谱

本文报道了7种新的N-烷基-N′-乙氧羰基甲基-N′-芳磺酰基-O-乙基磷酰二胺酯化合物的电子轰击质谱(EIMS)和化学电离质谱(CIMS,甲烷为反应气)。结果表明,无论是EIMS,还是CIMS均存在较多的骨架重排离子峰;取代基对谱图有较大的影响;EIMS中P—N键的断裂为重要质谱特征,CIMS中MH~+准分子离子为重要特征离子,还存在分子离子反应的产物。     

N-取代苯并咪唑和N-取代-2-硫代噻唑烷酮类化合物的质谱研究

本文所研究的7种N-取代苯并咪唑和硫代噻唑烷酮类化合物是一类新合成的具有较高杀菌活性的化合物。本文利用电子轰击质谱技术对表中所列的化合物进行了研究。在高分辨精确质量测量和亚稳离子测定的基础上着重讨论了分子内3、4位C—C键的断裂和与杂环     

1,3,3a,5-四苯基-3a,4,5,11-四氢-3H,6H-1,2,4-三唑并[4,3-d][1,5]苯并二氮杂(艹卓)的合成及晶体结构

通过2,4-二苯基-2,3-二氢-1H-1,5-苯并二氮杂(艹卓)与苯甲酰氯苯腙的[2+3]环加成反应制备了标题化合物,用X射线单晶衍射仪测定了其晶体结构.晶体属正交晶系,空间群为Fdd2.晶胞参数:a=1.762 8(4)nm,b=5.751 2(12)nm,c=1.022 7 nm,V=10.368(5)nm3,Z=16,Dc=1.262 g·cm-3,μ=0.075 mm-1,F(000)=4 160,1 139个可观测衍射点,R-0.046 1,Rw=0.056 0.     

有机磷化合物的质谱研究(Ⅶ)——二氮二磷杂环戊烷衍生物的化学电离质谱

本文报道了七种4.5-二氧代-2-硫代-1,3,2,4-二氮二磷杂环戊烷衍生物的化学电离质谱(CIMS,甲烷为反应气),结果表明:CIMS中准分子离子MH~+为基峰离子;MH~+离子易发生失去H_2S,CO,C_3H_6等小分子的裂解,(M+C_2H_5)~+离子存在再断裂。