掺铁铌酸锂(LiNbO_3:Fe)的光致损伤

本文研究了LiNbO_3:Fe的可见激光表面损伤;光伤迹线(位错滑移带与微裂纹)与针状微畸伴生。它们位于光斑边缘的正P_s端;微畴起于光伤迹线与晶体表面的圆柱形沟道。我们发现LN:Fe中的这些损伤缺陷能够为光生伏特效应下的空间电荷所缀饰;它们在正交偏光镜下明晰可见。本文讨论了由晶体缺陷所致的自增强衍射光,富集于缺陷的空间电荷所致的空洞场,以及由此场导致的发生在畴界上的静电斥力对此损伤所起的作用。     

In:Fe:LiNbO3晶体及其全息关联存储性能研究

在LiNbO 3 晶体中同时掺入质量分数w为0.03%的Fe 2 O 3 和摩尔分数x(In 2 O3 )为0.5%,1%和1.5%,分别生长成In(x=1%)FeLiNbO 3 ,In(x=2%)FeLiNbO 3 和In(x=3%)FeLiNbO 3 晶体.测试晶体的红外光谱;测试晶体的位相共轭反射率,并以In(x=3%)FeLiNbO 3 晶体作为存储元件,以In(x=1%)FeLiNbO 3 晶体位相共轭镜作为阈值反馈系统,实现了全息关联存储.     

In:Fe:LiNbO3晶体及其全息关联存储性能研究

在LiNbO 3 晶体中同时掺入质量分数w为0.03%的Fe 2 O 3 和摩尔分数x(In 2 O3 )为0.5%,1%和1.5%,分别生长成In(x=1%):Fe:LiNbO 3 ,In(x=2%):Fe:LiNbO 3 和In(x=3%):Fe:LiNbO 3 晶体.测试晶体的红外光谱;测试晶体的位相共轭反射率,并以In(x=3%):Fe:LiNbO 3 晶体作为存储元件,以In(x=1%):Fe:LiNbO 3 晶体位相共轭镜作为阈值反馈系统,实现了全息关联存储.     

Fe∶LiNbO3晶体中全息图的选择性擦除研究

研究选择性擦除的原理和方法，针对铌酸锂晶体中定影全息图和未定影全息图的特点，介绍相应的选择性擦除的原理和在物光和参考光中引入π相位差的几种方法，通过引入π相位差记录互补全息图，利用全息图及其互补全息图的非相干叠加，消除原全息图对晶体折射率的调制，从而实现对未来影全息图的选择性擦除，实验中实验了在晶体中某一数据面面内部分数据的擦除，并从理论上对实验结果进行了分析。     

近化学计量比Ce∶Mn∶LiNbO3晶体光折变性能研究

在LiNbO3中掺进0.015mass%MnCO3和 0.1mass%CeO2,以Czchralski法生长Li/Nb比为1.38的近化学计量比Ce∶Mn∶LiNbO3(Ce∶Mn∶SLN)晶体和Li/Nb比为0.946的同成分Ce∶Mn∶LiNbO3(Ce∶Mn∶CLN)晶体.测试了晶体的红外光谱和紫外可见吸收光谱,讨论了Ce∶Mn∶SLN晶体OH－吸收峰和吸收边移动机理.利用二波耦合光路测试了晶体的指数增益系数,Ce∶Mn∶SLN晶体指数增益系数Γ达到27 cm2－.同时,研究了Ce∶Mn∶SLN指数增益系数提高的机理.     

Fe∶BSO晶体的缺陷能级及光折变效应的研究

在硅酸铋（Bi12SiO20，BSO）晶体中掺入少量Fe2O3，生长出Fe：BSO晶体，由于Fe杂质在BSO晶体禁带中造成了一些缺陷能级，使得晶体的衍射效率和四波混频位相共轭反射率等光折变性能指标有较大提高。文中根据吸收光谱，初步确定了晶体中缺陷能级。     

THERMODYNAMIC ANALYSIS AND FORMATION ENTHALPY CALCULATION OF OXYGEN VACANCY DEFECT IN DOPED LITHIUM NIOBATE CRYSTALS

Based on the thermodynamic analysis of oxygen vacancy defects in lithium niobate (LiNbO₃ (LN)) and the data of thermogravimetric experiment, the formation enthalpies of congruent and several rare-earth (RE) doped LN crystals have been calculated. It was found that the formation enthalpy of oxygen vacancies can be decreased evidently by doping with valence-changeable RE ions. The experimental results were discussed and a new reduction process for photorefractive LN crystals at a relatively low temperature was proposed, and the reduction-treated crystals showed good effect in practical use.     

Influences of Mg^2＋ ion on dopant occupancy and upconversion luminescence of Ho^3＋ ion in LiNbO3 crystal

The effects of a Mg^2＋ ion on the dopant occupancy and upconversion luminescence of a Ho^3＋ ion in LiNbO3 crystal are reported. The birefringence gradient of the crystal is measured to investigate the optical homogeneity. The X-ray powder diffraction spectrum and the upconversion luminescence are used to investigate defect structure and spectroscopic properties of Mg,Ho：LiNbO3. Under 808-nm excitation, blue, red, and very intense yellow-green bands are observed. Based on the energy levels of Ho^3＋ in LiNbO3, and the pump intensity dependence of the observed emission, an excitation scheme is presented. The upconversion emission spectra reveal an enhancement of upconversion intensity when the Mg^2＋ ions are introduced into Ho：LiNbO3. The main upconversion mechanism is discussed in this work.     

OH~- absorption and nonvolatile holographic storage properties in Mg:Ru:Fe:LiNbO_3 crystal as a function of Mg concentration

Mg:Ru:Fe:LiNbO3 crystals with various concentrations of MgO (in mole) and fixed content of RuO2 and Fe2O3 (in mass) are grown with the Czochralski method from the congruent melt. Their infrared transmission spectra are measured and discussed to investigate the defect structure. With the increase of Mg2+ concentration the blue nonvolatile holographic storage capability is enhanced. The nonvolatile holographic storage properties of dual-wavelength recording of Mg(7 mol%):Ru:Fe:LiNbO3 nonvolatile diffraction efficiency, response time, and nonvolatile sensitivity reach 59.8%, 70 s, and 1.04 cm/J, respectively. Comparing Mg(7 mol%):Ru:Fe:LiNbO3 with Ru:Fe:LiNbO3 crystal, the response time is shortened apparently. The nonvolatile diffraction efficiency and sensitivity are raised largely. The mechanism in blue photorefractive nonvolatile holographic storage is discussed.     

Zn∶Mn∶Fe∶LiNbO3晶体位相共轭性能和全息关联存储

在同成分LiNbO3中,掺入ZnO的摩尔分数分别为1%、3%、5%、7%和9%,掺入（质量分数）0.03% MnCO3和0.08%Fe2O3,采用提拉法生长了优质Zn∶Mn∶Fe∶LiNbO3晶体.测试Zn∶Mn∶Fe∶LiNbO3晶体的OH-红外吸收光谱,抗光损伤能力和位相共轭性能.Zn离子浓度在7%和9%时,OH-吸收峰移到3 528 cm－1,讨论OH-吸收峰移动机理.随着Zn离子浓度增加,抗光损伤能力增加.Zn离子浓度增加到7%,达到阈值.Zn∶Mn∶Fe∶LiNbO3晶体抗光损伤能力比LiNbO3晶体高二个数量级,研究高掺锌Mn∶Fe∶LiNbO3晶体抗光损伤增强机理.随着Zn离子浓度增加,Zn∶Mn∶Fe∶LiNbO3晶体位相共轭反射率降低,位相共轭响应速度增加.Zn∶Mn∶Fe∶LiNbO3晶体位相共轭镜消除了光波的位相畸变.以Zn∶Mn∶Fe∶LiNbO3晶体作存储介质进行全息关联存储实验.讨论全息关联存储的工作原理.以原图象的25%和50%进行寻址,在输出平面上接收到较完整的存储图象.