In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

模拟酸雨对小黑杨幼苗生长和光合特性的影响

目的 研究小黑杨(Populus simonii × P. nigra)幼苗生长、生理特性和叶片光系统Ⅱ(PSⅡ)活性对酸雨胁迫的响应情况,为其在酸雨沉降日趋频发的北方地区栽植提供参考。方法 以小黑杨为研究材料,对其连续喷施不同酸度[pH为2.5、4.5和7.0(CK)]的模拟酸雨,待小黑杨叶片出现明显病症时,测定其生长、叶片超微结构、抗氧化酶和光系统Ⅱ活性指标。结果 与对照相比,pH 4.5的模拟酸雨处理下小黑杨株高、茎粗、叶片数和叶面积显著增加;叶片颜色变浅绿色,但叶绿体结构紧凑,类囊体排列规则,未见淀粉粒,嗜锇滴数量略增多。而pH 2.5模拟酸雨处理的小黑杨幼苗茎粗和叶面积显著降低;叶片颜色变黄、叶尖和叶脉出现明显斑点,且细胞膜局部破损,叶绿体体积增大,类囊体间隙增大,可见少量淀粉粒,嗜锇滴数量和体积明显增加。模拟酸雨处理的小黑杨叶片中超氧阴离子 {\mathrm{O}}_2^{\stackrel{-}{\underset{·}{\mathrm{}}}}产生速率、过氧化氢(H₂O₂)含量和过氧化氢酶活性较CK显著增加,且酸度越大,增幅越大;而过氧化物酶活性和超氧化物歧化酶活性随酸度的增大表现为先升后降。其中,pH 2.5模拟酸雨处理杨树叶片的可变荧光强度(V_L、V_K、V_J、V_I)和诱导曲线初始斜率(M_O)显著高于CK,但叶绿素荧光曲线面积(Fix Area)和质体醌库的大小(S_m)显著低于CK。pH 4.5模拟酸雨处理中,仅V_L和V_K显著高于CK,而其他荧光参数与CK差异不显著。结论 酸雨对小黑杨生长的影响主要取决于其pH,pH 2.5模拟酸雨处理抑制小黑杨生长,并且叶片出现坏死斑点症状时,叶绿体结构异常,类囊体排列不规整,光系统Ⅱ电子传递受到抑制;而pH 4.5模拟酸雨处理促进小黑杨生长、叶片超微结构表现正常,小黑杨幼苗对pH 4.5酸雨沉降具有一定抗性。     

从开封“清明文化节”看清明文化复兴概况

清明节作为我国一大节日,有着丰富的传统文化内涵。在清明节俗传承、保护与发展的过程中,我们必须尊重清明节传统习俗,真正了解该传统习俗的内涵,只有这样,才能真正达到弘扬传统文化、保护清明节俗的目的。     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.     

Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment

The N₂O radicals in-situ treatment on gate region has been employed to improve device performance of recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). The samples after gate recess etching were treated by N₂O radicals without physical bombardment. After in-situ treatment (IST) processing, the gate leakage currents decreased by more than one order of magnitude compared to the sample without IST. The fabricated HEMTs with the IST process show a low reverse gate current of 10^-9 A/mm, high on/off current ratio of 10⁸, and high f_T×L_g of 13.44 GHz· μm. A transmission electron microscope (TEM) imaging illustrates an oxide layer with a thickness of 1.8 nm exists at the AlGaN surface. X-ray photoelectron spectroscopy (XPS) measurement shows that the content of the Al-O and Ga-O bonds elevated after IST, indicating that the Al-N and Ga-N bonds on the AlGaN surface were broken and meanwhile the Al-O and Ga-O bonds formed. The oxide formed by a chemical reaction between radicals and the surface of the AlGaN barrier layer is responsible for improved device characteristics.     

Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

We investigate the instability of threshold voltage in D-mode MIS-HEMT with in-situ SiN as gate dielectric under different negative gate stresses.The complex non-monotonic evolution of threshold voltage under the negative stress and during the recovery process is induced by the combination effect of two mechanisms.The effect of trapping behavior of interface state at SiN/AlGaN interface and the effect of zener traps in AlGaN barrier layer on the threshold voltage instability are opposite to each other.The threshold voltage shifts negatively under the negative stress due to the detrapping of the electrons at SiN/AlGaN interface,and shifts positively due to zener trapping in AlGaN barrier layer.As the stress is removed,the threshold voltage shifts positively for the retrapping of interface states and negatively for the thermal detrapping in AlGaN.However,it is the trapping behavior in the AlGaN rather than the interface state that results in the change of transconductance in the D-mode MIS-HEMT.     

High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications

We demonstrated an AlGaN/GaN high electron mobility transistor(HEMT)namely double-Vthcoupling HEMT(DVC-HEMT)fabricated by connecting different threshold voltage(Vth)values including the slant recess element and planar element in parallel along the gate width with N;O plasma treatment on the gate region.The comparative studies of DVC-HEMT and Fin-like HEMT fabricated on the same wafer show significantly improved linearity of transconductance(Gm)and radio frequency(RF)output signal characteristics in DVC-HEMT.The fabricated device shows the transconductance plateau larger than 7 V,which yields a flattened fT/fmax-gate bias dependence.At the operating frequency of 30 GHz,the peak power-added efficiency(PAE)of 41%accompanied by the power density(Pout)of 5.3 W/mm.Furthermore,the proposed architecture also features an exceptional linearity performance with 1-d B compression point(P1 d B)of 28 d Bm,whereas that of the Fin-like HEMT is 25.2 d Bm.The device demonstrated in this article has great potential to be a new paradigm for millimeter-wave application where high linearity is essential.     

Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment

In this paper,the enhancement-mode AlGaN/GaN HEMT combined with the low damage recessed-gate etching and the optimized oxygen plasma treatment was fabricated.Scanning electron microscope/energy dispersive spectrometer(SEM/EDS) method and x-ray photoelectron spectroscopy(XPS) method were used to confirm the formation of oxides.Based on the experimental results,the obtained enhancement-mode HEMT exhibited a threshold voltage of 0.5 V,a high peak transconductance of 210 mS/mm,and a maximum drain current of 610 mA/mm at the gate bias of 4 V.Meanwhile,the on/off current ratio of enhancement-mode HEMT was as high as 10~8,drain induced barrier lowering(DIBL) was as low as 5 raV/V,and subthreshold swing(SS) of 80 mV/decade was obtained.Compared with the conventional HEMT,the Schottky reverse current of enhancement-mode HEMT was three orders of magnitude lower,and the off-state breakdown voltage of which was higher.In addition,a power gain cutoff frequency(/max) of the enhancement-mode HEMT was larger than that of the conventional one.     

漆原镍催化剂用于硝基化合物催化加氢

采用锌粉还原氯化镍制备了漆原镍催化剂,并将其用于催化间二硝基苯加氢制间苯二胺和2,5-二氯硝基苯加氢制2,5-二氯苯胺反应.运用X射线衍射、电感耦合等离子体发射光谱和透射电子显微镜等技术对催化剂进行了表征.考察了锌粉、展开剂和制备温度对催化剂活性的影响,以及压力、溶剂等对加氢反应速率的影响,确定了适宜的催化剂制备条件.结果表明,在间二硝基苯和2,5-二氯硝基苯加氢反应中,漆原镍催化剂表现出很高的活性和选择性,在乙醇溶剂中加入适量的水能够大大提高反应速率,适量的脱氯抑制剂能够有效加快2,5-二氯硝基苯加氢速率并提高2,5-二氯苯胺选择性.漆原镍催化剂重复使用5次后其性能基本保持不变.     

A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications

We demonstrate a novel Si-rich SiN bilayer passivation technology for AlGaN/GaN high electron mobility transistors (HEMTs) with thin-barrier to minimize surface leakage current to enhance the breakdown voltage. The bilayer SiN with 20-nm Si-rich SiN and 100-nm Si$_{3}$N$_{4}$ was deposited by plasma-enhanced chemical vapor deposition (PECVD) after removing 20-nm SiO$_{2}$ pre-deposition layer. Compared to traditional Si$_{3}$N$_{4}$ passivation for thin-barrier AlGaN/GaN HEMTs, Si-rich SiN bilayer passivation can suppress the current collapse ratio from 18.54% to 8.40%. However, Si-rich bilayer passivation leads to a severer surface leakage current, so that it has a low breakdown voltage. The 20-nm SiO$_{2}$ pre-deposition layer can protect the surface of HEMTs in fabrication process and decrease Ga-O bonds, resulting in a lower surface leakage current. In contrast to passivating Si-rich SiN directly, devices with the novel Si-rich SiN bilayer passivation increase the breakdown voltage from 29 V to 85 V. Radio frequency (RF) small-signal characteristics show that HEMTs with the novel bilayer SiN passivation leads to $f_{\rm T}/f_{\rm max}$ of 68 GHz/102 GHz. At 30 GHz and $V_{\rm DS} = 20$ V, devices achieve a maximum $P_{\rm out}$ of 5.2 W/mm and a peak power-added efficiency (PAE) of 42.2%. These results indicate that HEMTs with the novel bilayer SiN passivation can have potential applications in the millimeter-wave range.